Inventor · disambiguated record
Sang-Bom Kang
Also filed as: KANG SANG-BOM
52 granted patents·32 pending applications·5,818 citations·filing 1998–2019
99Inventor score
Top patents by PatentIndex Score
84 records- 0198US7521331B2High dielectric film and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·64 cites·31 claims
- 0298US6590251B2Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 8, 2003·627 cites·13 claims
- 0398US6478872B1Method of delivering gas into reaction chamber and shower head used to deliver gasSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 12, 2002·814 cites·13 claims
- 0498US6399491B2Method of manufacturing a barrier metal layer using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·342 cites·11 claims
- 0598US6348376B2Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 19, 2002·254 cites·11 claims
- 0698US6287965B1Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 11, 2001·1.3k cites·23 claims
- 0798US6174809B1Method for forming metal layer using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 16, 2001·1.2k cites·25 claims
- 0898US6139700AMethod of and apparatus for forming a metal interconnection in the contact hole of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 31, 2000·410 cites·16 claims
- 0997US6458701B1Method for forming metal layer of semiconductor device using metal halide gasSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 1, 2002·238 cites·10 claims
- 1097US6197683B1Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 6, 2001·316 cites·17 claims
- 1195US8101480B1Methods of forming transistors and CMOS semiconductor devices using an SMT techniqueKIM SEOK-HOON·Filed 2010·Granted Jan 24, 2012·34 cites·40 claims
- 1292US8916936B2Transistor structure of a semiconductor deviceLEE JUNG-CHAN·Filed 2013·Granted Dec 23, 2014·15 cites·12 claims
- 1392US7081409B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·50 cites·19 claims
- 1491US7098131B2Methods for forming atomic layers and thin films including tantalum nitride and devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 29, 2006·48 cites·25 claims
- 1589US8748251B2Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesNA HOON-JOO·Filed 2012·Granted Jun 10, 2014·10 cites·14 claims
- 1689US8664633B2Non-volatile memory devices having resistance changeable elements and related systems and methodsPARK HEUNG-KYU·Filed 2011·Granted Mar 4, 2014·17 cites·20 claims
- 1787US8815672B2Methods of manufacturing semiconductor devicesLEE SEUNG-HUN·Filed 2011·Granted Aug 26, 2014·8 cites·22 claims
- 1887US7833855B2Methods of producing integrated circuit devices utilizing tantalum amine derivativesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 16, 2010·10 cites·33 claims
- 1987US7452811B2Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·10 cites·10 claims
- 2086US9299811B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 29, 2016·7 cites·12 claims
- 2184US9240323B2Methods of forming semiconductor devices with metal silicide using pre-amorphization implantsSHIN CHUNG-HWAN·Filed 2013·Granted Jan 19, 2016·6 cites·16 claims
- 2283US7521357B2Methods of forming metal wiring in semiconductor devices using etch stop layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·7 cites·24 claims
- 2382US7390719B2Method of manufacturing a semiconductor device having a dual gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·10 cites·20 claims
- 2481US7214620B2Methods of forming silicide films with metal films in semiconductor devices and contacts including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·26 cites·20 claims
- 2579US7172967B2Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 6, 2007·19 cites·22 claims
- 2675US10388563B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 20, 2019·2 cites·19 claims
- 2772US10847454B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 24, 2020·1 cites·20 claims
- 2871US10840374B2Semiconductor devices with shaped portions of elevated source/drain regionsSHIN CHUNG HWAN·Filed 2018·Granted Nov 17, 2020·1 cites·20 claims
- 2971US9305921B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 5, 2016·2 cites·20 claims
- 3070US10510658B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 3170US7692196B2Memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·4 cites·18 claims
- 3270US7211506B2Methods of forming cobalt layers for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 1, 2007·12 cites·15 claims
- 3368US7494859B2Semiconductor device having metal gate patterns and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·4 cites·22 claims
- 3466US10043902B2Semiconductor devices with shaped portions of elevated source/drain regionsSHIN CHUNG HWAN·Filed 2015·Granted Aug 7, 2018·1 cites·9 claims
- 3565US9190410B2Semiconductor devicesLEE SEUNG-HUN·Filed 2014·Granted Nov 17, 2015·1 cites·13 claims
- 3665US8617991B2Method of manufacturing semiconductor deviceLEE JUNG-CHAN·Filed 2012·Granted Dec 31, 2013·2 cites·20 claims
- 3763US7531881B2Semiconductor devices having transistors with different gate structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·2 cites·14 claims
- 3862US8633078B2Method for manufacturing semiconductor deviceLIM KWAN-YONG·Filed 2011·Granted Jan 21, 2014·1 cites·14 claims
- 3962US7459372B2Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 2, 2008·1 cites·27 claims
- 4062US7056776B2Semiconductor devices having metal containing N-type and P-type gate electrodes and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 6, 2006·8 cites·40 claims
- 4161US7105444B2Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·6 cites·53 claims
- 4259US7410892B2Methods of fabricating integrated circuit devices having self-aligned contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·1 cites·34 claims
- 4357US7045842B2Integrated circuit devices having self-aligned contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 16, 2006·6 cites·23 claims
- 4453US11127739B2Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 21, 2021·0 cites·10 claims
- 4552US7892958B2Methods of fabricating semiconductor devices having transistors with different gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 22, 2011·0 cites·4 claims
- 4651US2007099421A1Methods For Forming Cobalt Layers Including Introducing Vaporized Cobalt Precursors And Methods For Manufacturing Semiconductor Devices Using The SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4750US7285493B2Methods of forming a metal layer using transition metal precursorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 23, 2007·2 cites·23 claims
- 4850US2006251812A1Methods for forming atomic layers and thin films including a tantalum amine derivative and devices including the sameKANG SANG-BOM·Filed 2006·Application pending·0 cites
- 4950US2014246726A1Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 5049US2014287564A1Semiconductor Devices Having Shallow JunctionsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →