Inventor · disambiguated record
Peter Javorka
Also filed as: JAVORKA PETER
63 granted patents·19 pending applications·180 citations·filing 2006–2024
98Inventor score
Files withGLOBALFOUNDRIES INC43KRONHOLZ STEPHAN8JAVORKA PETER7ADVANCED MICRO DEVICES INC4FLACHOWSKY STEFAN3
Top patents by PatentIndex Score
82 records- 0193US8815741B1Method of forming a semiconductor structure including an implantation of ions into a layer of spacer materialGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 26, 2014·13 cites·20 claims
- 0292US8574981B2Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising sameFLACHOWSKY STEFAN·Filed 2011·Granted Nov 5, 2013·13 cites·18 claims
- 0390US8536009B2Differential threshold voltage adjustment in PMOS transistors by differential formation of a channel semiconductor materialJAVORKA PETER·Filed 2011·Granted Sep 17, 2013·13 cites·19 claims
- 0489US9391176B2Multi-gate FETs having corrugated semiconductor stacks and method of forming the sameGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·9 cites·17 claims
- 0588US8497180B2Transistor with boot shaped source/drain regionsJAVORKA PETER·Filed 2011·Granted Jul 30, 2013·10 cites·16 claims
- 0687US8609498B2Transistor with embedded Si/Ge material having reduced offset and superior uniformityKRONHOLZ STEPHAN·Filed 2011·Granted Dec 17, 2013·8 cites·18 claims
- 0786US8343826B2Method for forming a transistor comprising high-k metal gate electrode structures including a polycrystalline semiconductor material and embedded strain-inducing semiconductor alloysGLOBALFOUNDRIES INC·Filed 2011·Granted Jan 1, 2013·8 cites·20 claims
- 0886US7354836B2Technique for forming a strained transistor by a late amorphization and disposable spacersADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 8, 2008·10 cites·19 claims
- 0985US7696052B2Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regionsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 13, 2010·10 cites·13 claims
- 1084US7547610B2Method of making a semiconductor device comprising isolation trenches inducing different types of strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 16, 2009·11 cites·12 claims
- 1183US9412859B2Contact geometry having a gate silicon length decoupled from a transistor lengthGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 9, 2016·5 cites·24 claims
- 1283US9224863B2Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layerJAVORKA PETER·Filed 2012·Granted Dec 29, 2015·6 cites·25 claims
- 1382US8338892B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrodeKRONHOLZ STEPHAN·Filed 2010·Granted Dec 25, 2012·5 cites·20 claims
- 1479US8524564B2Full silicidation prevention via dual nickel deposition approachJAVORKA PETER·Filed 2011·Granted Sep 3, 2013·4 cites·14 claims
- 1578US8704229B2Partial poly amorphization for channeling preventionJAVORKA PETER·Filed 2011·Granted Apr 22, 2014·3 cites·17 claims
- 1677US8759922B2Full silicidation prevention via dual nickel deposition approachGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 24, 2014·3 cites·20 claims
- 1776US9472642B2Method of forming a semiconductor device structure and such a semiconductor device structureGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 18, 2016·2 cites·25 claims
- 1876US9054044B2Method for forming a semiconductor device and semiconductor device structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 9, 2015·3 cites·6 claims
- 1976US8796080B2Methods of epitaxially forming materials on transistor devicesKRONHOLZ STEPHAN·Filed 2011·Granted Aug 5, 2014·4 cites·13 claims
- 2076US8642419B2Methods of forming isolation structures for semiconductor devicesKRONHOLZ STEPHAN·Filed 2012·Granted Feb 4, 2014·4 cites·9 claims
- 2174US8481404B2Leakage control in field effect transistors based on an implantation species introduced locally at the STI edgeKAMMLER THORSTEN·Filed 2010·Granted Jul 9, 2013·4 cites·20 claims
- 2271US10049917B2FDSOI channel control by implanted high-K buried oxideGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 14, 2018·1 cites·15 claims
- 2371US8939765B2Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growthKRONHOLZ STEPHAN·Filed 2010·Granted Jan 27, 2015·3 cites·22 claims
- 2471US7344984B2Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 18, 2008·4 cites·21 claims
- 2570US9006835B2Transistor with embedded Si/Ge material having reduced offset and superior uniformityGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 14, 2015·2 cites·19 claims
- 2670US8481381B2Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structuresKRONHOLZ STEPHAN-DETLEF·Filed 2011·Granted Jul 9, 2013·2 cites·10 claims
- 2769US9373720B2Three-dimensional transistor with improved channel mobilityGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 21, 2016·2 cites·18 claims
- 2867US9224655B2Methods of removing gate cap layers in CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 29, 2015·2 cites·20 claims
- 2967US9177803B2HK/MG process flows for P-type semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 3, 2015·1 cites·5 claims
- 3067US8735303B2Methods of forming PEET devices with different structures and performance characteristicsTHEES HANS-JUERGEN·Filed 2011·Granted May 27, 2014·2 cites·19 claims
- 3167US8513074B2Reduced threshold voltage-width dependency and reduced surface topography in transistors comprising high-k metal gate electrode structures by a late carbon incorporationJAVORKA PETER·Filed 2011·Granted Aug 20, 2013·2 cites·19 claims
- 3266US8778772B2Method of forming transistor with increased gate widthTAN CHUNG FOONG·Filed 2012·Granted Jul 15, 2014·3 cites·16 claims
- 3366US8003460B2Method of forming a semiconductor structure comprising a formation of at least one sidewall spacer structureGLOBALFOUNDRIES INC·Filed 2008·Granted Aug 23, 2011·3 cites·13 claims
- 3465US9401423B2Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layerGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 26, 2016·1 cites·23 claims
- 3563US9343374B1Efficient main spacer pull back process for advanced VLSI CMOS technologiesGLOBALFOUNDRIES INC·Filed 2014·Granted May 17, 2016·1 cites·20 claims
- 3662US7897451B2Method for creating tensile strain by selectively applying stress memorization techniques to NMOS transistorsGLOBALFOUNDRIES INC·Filed 2008·Granted Mar 1, 2011·1 cites·21 claims
- 3761US12328926B1Structures for a field-effect transistor that include a spacer structureGLOBALFOUNDRIES US INC·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 3859US2025234585A1Extended drain metal oxide semiconductor (edmos) field effect transistor (fet) with dual thickness semiconductor materialGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 3958US10643885B2FDSOI channel control by implanted high-k buried oxideGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·0 cites·17 claims
- 4057US8039338B2Method for reducing defects of gate of CMOS devices during cleaning processes by modifying a parasitic PN junctionGLOBALFOUNDRIES INC·Filed 2009·Granted Oct 18, 2011·1 cites·9 claims
- 4156US8138571B2Semiconductor device comprising isolation trenches inducing different types of strainSCHWAN CHRISTOPH·Filed 2009·Granted Mar 20, 2012·1 cites·14 claims
- 4253US9349734B2Selective FuSi gate formation in gate first CMOS technologiesGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·0 cites·18 claims
- 4353US8722481B2Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structuresGLOBALFOUNDRIES INC·Filed 2013·Granted May 13, 2014·0 cites·10 claims
- 4453US2014167110A1Partial poly amorphization for channeling preventionGLOBAL FOUNDRIES INC·Filed 2014·Application pending·0 cites
- 4551US9373509B2FINFET doping method with curvilnear trajectory implantation beam pathGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 21, 2016·0 cites·17 claims
- 4651US9129843B1Integrated inductorGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 8, 2015·0 cites·17 claims
- 4750US10340380B2Three-dimensional transistor with improved channel mobilityGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 2, 2019·0 cites·20 claims
- 4850US2014191332A1Pfet devices with different structures and performance characteristicsGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 4950US2016315162A1Contact geometry having a gate silicon length decoupled from a transistor lengthGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 5049US9484459B2Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layerGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 1, 2016·0 cites·22 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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