Inventor · disambiguated record
Soon-Yeon Park
Also filed as: PARK SOON-YEON
6 granted patents·2 pending applications·54 citations·filing 2001–2004
81Inventor score
Top patents by PatentIndex Score
8 records- 0181US6677217B2Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumpsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 13, 2004·24 cites·27 claims
- 0274US6680251B2Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parametersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 20, 2004·16 cites·14 claims
- 0358US6472319B2Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatmentSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 29, 2002·6 cites·48 claims
- 0456US6692795B2Method for fabricating semiconductor device having ruthenium layer and equipment for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 17, 2004·5 cites·19 claims
- 0546US7429406B2Method of forming thin ruthenium-containing layerSAMSUNG ELECTRONICS CO INC·Filed 2004·Granted Sep 30, 2008·2 cites·18 claims
- 0645US6649502B2Methods of forming multilayer dielectric regions using varied deposition parametersSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 18, 2003·1 cites·44 claims
- 0737US2004070019A1Integrated circuit metal-insulator-metal capacitors including hemispherical grain lumpsFiled 2003·Application pending·0 cites
- 0836US2003124252A1Method of forming thin ruthenium-containing layerFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →