Method of forming thin ruthenium-containing layer

Abstract

A method of forming a thin ruthenium-containing layer includes performing a CVD process using butyl ruthenoscene as a ruthenium source material. The thin ruthenium-containing layer may be formed by a one-step or two-step CVD process. The one-step CVD process is performed under a constant oxygen flow rate and a constant deposition pressure. The two-step CVD process includes forming a seed layer and forming a main layer, each of which is performed under a different process condition of a deposition temperature, an oxygen flow rate, and a deposition pressure.

That which is claimed is:  
     
         1 . A method of forming a thin ruthenium-containing layer, the method comprising performing a chemical vapor deposition (CVD) process using butyl ruthenoscene [C 5 H 5 Ru(C 5 H 4 CH 2 CH 2 CH 2 CH 3 )] as a source material and using an oxygen-containing gas as a reaction material to separate a ruthenium element from the butyl ruthenoscene.  
     
     
         2 . The method of  claim 1  wherein the thin ruthenium-containing layer comprises at least one of a ruthenium layer and a ruthenium oxide layer.  
     
     
         3 . The method of  claim 1  wherein the oxygen-containing gas is selected from the group consisting of oxygen, ozone, and oxygen plasma.  
     
     
         4 . The method of  claim 3  wherein oxygen and butyl ruthenoscene are supplied at flow rates of 300-2000 sccm and 0.02-0.05 ccm, respectively.  
     
     
         5 . The method of  claim 1  wherein the CVD process includes one step performed under a constant ratio of flow rate of the oxygen-containing gas to butyl ruthenoscene and a constant deposition pressure.  
     
     
         6 . The method of  claim 4  further including forming a thin ruthenium-containing seed layer by sputtering before the step of the performing CVD process.  
     
     
         7 . The method of  claim 4  wherein the CVD process is performed at a deposition pressure of 0.5 to 30 Torr.  
     
     
         8 . The method of  claim 4  wherein the CVD process is performed at a temperature of 250 to 400° C.  
     
     
         9 . The method of  claim 4  wherein the ratio of flow rate of the oxygen-containing gas (sccm) to butyl ruthenoscene (ccm) is 5000 to 100000, and the deposition pressure is 0.5 Torr or less.  
     
     
         10 . The method of  claim 4  wherein the CVD process is performed using the oxygen-containing gas and an inactive gas including at least one of nitrogen and argon.  
     
     
         11 . The method of  claim 1  wherein: 
 the step of performing the CVD process includes forming a thin ruthenium-containing seed layer and forming a thin ruthenium-containing main layer; and  
 the steps of forming the seed layer and forming the main layer are performed using different ratios of flow rate of the oxygen-containing gas to butyl ruthenoscene under different deposition pressure conditions.  
 
     
     
         12 . The method of  claim 11  wherein the seed layer is formed at a deposition pressure of 0.5 to 30 Torr.  
     
     
         13 . The method of  claim 11  wherein the seed layer is formed while the oxygen-containing gas and butyl ruthenoscene are supplied at a flow rate of 500-2000 sccm and 0.02-0.05 ccm, respectively.  
     
     
         14 . The method of  claim 11  wherein the main layer is formed at a deposition pressure of 0.5 to 10 Torr.  
     
     
         15 . The method of  claim 11  wherein the main layer is formed while oxygen and butyl ruthenoscene are supplied at a flow rate of 40-1000 sccm and 0.02-0.05 ccm, respectively.  
     
     
         16 . The method of  claim 11  wherein the step of performing the CVD process further includes forming a further thin ruthenium-containing layer on a substrate by sputtering before forming the seed layer.  
     
     
         17 . The method of  claim 11  wherein the CVD process is performed at a temperature of 250 to 400° C.  
     
     
         18 . The method of  claim 11  wherein the seed layer and the main layer are formed at different temperatures.  
     
     
         19 . The method of  claim 11  wherein the CVD process is performed using the oxygen-containing gas and an inactive gas including at least one of nitrogen and argon.  
     
     
         20 . A method of forming a thin ruthenium-containing layer on a substrate, the method comprising: 
 a) providing a supply of butyl ruthenoscene [c 5 H 5 Ru(C 5 H 4 CH 2 CH 2 CH 2 CH 3 )];    b) providing a supply of an oxygen-containing gas selected from the group consisting of oxygen, ozone, and oxygen plasma; and    c) depositing a ruthenium element from the butyl ruthenoscene onto the substrate using a chemical vapor deposition (CVD) process wherein the oxygen-containing gas reacts with the butyl ruthenoscene to separate the ruthenium element from the butyl ruthenoscene;    d) wherein the thin ruthenium-containing layer comprises at least one of a ruthenium layer and a ruthenium oxide layer.