Inventor · disambiguated record
Michael V. Aquilino
Also filed as: AQUILINO MICHAEL V · AQUILINO MICHAEL VINCENT · Aquilino Michael
27 granted patents·3 pending applications·138 citations·filing 2009–2019
95Inventor score
Files withGLOBALFOUNDRIES INC14IBM6AQUILINO MICHAEL V4GLOBALFOUNDRIES US INC2AQUILINO MICHAEL VINCENT1
Top patents by PatentIndex Score
30 records- 0196US9812400B1Contact line having insulating spacer therein and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·19 cites·15 claims
- 0295US10325819B1Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·15 cites·20 claims
- 0393US10269654B1Methods, apparatus and system for replacement contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 23, 2019·12 cites·20 claims
- 0492US9905473B1Self-aligned contact etch for fabricating a FinFETGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·7 cites·19 claims
- 0592US8053301B2CMOS SiGe channel pFET and Si channel nFET devices with minimal STI recessIBM·Filed 2009·Granted Nov 8, 2011·27 cites·14 claims
- 0691US8969163B2Forming facet-less epitaxy with self-aligned isolationAQUILINO MICHAEL V·Filed 2012·Granted Mar 3, 2015·17 cites·18 claims
- 0789US9035430B2Semiconductor fin on local oxideVEGA REINALDO A·Filed 2012·Granted May 19, 2015·9 cites·19 claims
- 0886US10644156B2Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·5 cites·12 claims
- 0982US10340142B1Methods, apparatus and system for self-aligned metal hard masksGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 2, 2019·3 cites·17 claims
- 1080US10833160B1Field-effect transistors with self-aligned and non-self-aligned contact openingsGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·3 cites·9 claims
- 1180US10418455B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 17, 2019·2 cites·9 claims
- 1279US8658486B2Forming facet-less epitaxy with a cut maskAQUILINO MICHAEL VINCENT·Filed 2012·Granted Feb 25, 2014·7 cites·15 claims
- 1377US10204797B1Methods, apparatus, and system for reducing step height difference in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 12, 2019·2 cites·20 claims
- 1476US8704310B2Trench isolation structureIBM·Filed 2013·Granted Apr 22, 2014·3 cites·18 claims
- 1574US8557649B2Method for controlling structure heightVENIGALLA RAJASEKHAR·Filed 2011·Granted Oct 15, 2013·4 cites·5 claims
- 1667US8623713B2Trench isolation structureAQUILINO MICHAEL V·Filed 2011·Granted Jan 7, 2014·2 cites·23 claims
- 1760US10930549B2Cap structureGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 23, 2021·0 cites·15 claims
- 1859US10522639B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 31, 2019·0 cites·12 claims
- 1956US10460986B2Cap structureGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 2054US2015044843A1Semiconductor fin on local oxideIBM·Filed 2014·Application pending·0 cites
- 2153US10177154B2Structure and method to prevent EPI short between trenches in FinFET eDRAMIBM·Filed 2017·Granted Jan 8, 2019·0 cites·19 claims
- 2253US10049985B2Contact line having insulating spacer therein and method of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 14, 2018·0 cites·14 claims
- 2351US11101364B2Field-effect transistors with diffusion blocking spacer sectionsGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 2450US8853796B2High-K metal gate deviceTEH YOUNG WAY·Filed 2011·Granted Oct 7, 2014·1 cites·26 claims
- 2550US2013140670A1Structure and method for reduction of vt-w effect in high-k metal gate devicesIBM·Filed 2013·Application pending·0 cites
- 2649US9818741B2Structure and method to prevent EPI short between trenches in FINFET eDRAMIBM·Filed 2015·Granted Nov 14, 2017·0 cites·13 claims
- 2748US10971625B2Epitaxial structures of a semiconductor device having a wide gate pitchGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 6, 2021·0 cites·18 claims
- 2844US2012187522A1Structure and method for reduction of vt-w effect in high-k metal gate devicesAQUILINO MICHAEL V·Filed 2011·Application pending·0 cites
- 2941US8859388B2Sealed shallow trench isolation regionAQUILINO MICHAEL V·Filed 2012·Granted Oct 14, 2014·0 cites·13 claims
- 3038US10453751B2Tone inversion method and structure for selective contact via patterningGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 22, 2019·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →