Inventor · disambiguated record
Thomas E. Davenport
Also filed as: DAVENPORT THOMAS · DAVENPORT THOMAS E
16 granted patents·354 citations·filing 1991–2016
93Inventor score
Top patents by PatentIndex Score
16 records- 0196US9514797B1Hybrid reference generation for ferroelectric random access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 6, 2016·21 cites·20 claims
- 0291US5206788ASeries ferroelectric capacitor structure for monolithic integrated circuits and methodRAMTRON CORP·Filed 1991·Granted Apr 27, 1993·140 cites·30 claims
- 0389US5519566AMethod of manufacturing ferroelectric bismuth layered oxidesRAMTRON INT CORP·Filed 1995·Granted May 21, 1996·78 cites·20 claims
- 0489US5426075AMethod of manufacturing ferroelectric bismuth layered oxidesRAMTRON INT CORP·Filed 1994·Granted Jun 20, 1995·73 cites·20 claims
- 0588US9624094B1Hydrogen barriers in a copper interconnect processCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Apr 18, 2017·6 cites·20 claims
- 0682US8916434B2Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM processSUN SHAN·Filed 2012·Granted Dec 23, 2014·6 cites·11 claims
- 0780US8552515B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing stepsSUN SHAN·Filed 2012·Granted Oct 8, 2013·5 cites·71 claims
- 0879US8518792B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structureSUN SHAN·Filed 2012·Granted Aug 27, 2013·5 cites·33 claims
- 0975US9548348B2Methods of fabricating an F-RAMCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jan 17, 2017·4 cites·14 claims
- 1067US9318693B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structureCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Apr 19, 2016·1 cites·20 claims
- 1166US6853535B2Method for producing crystallographically textured electrodes for textured PZT capacitorsRAMTRON INT CORP·Filed 2002·Granted Feb 8, 2005·12 cites·18 claims
- 1265US9240440B1Method minimizing imprint through packaging of F-RAMCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jan 19, 2016·2 cites·15 claims
- 1361US9006808B2Eliminating shorting between ferroelectric capacitors and metal contacts during ferroelectric random access memory fabricationCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Apr 14, 2015·1 cites·19 claims
- 1453US8728901B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitorsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted May 20, 2014·0 cites·20 claims
- 1547US8518791B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitorsSUN SHAN·Filed 2012·Granted Aug 27, 2013·0 cites·30 claims
- 1638US8842460B2Method for improving data retention in a 2T/2C ferroelectric memoryRAMTRON INT CORP·Filed 2012·Granted Sep 23, 2014·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →