Assignee
SUN SHAN
US·4 granted patents·16 citations·filing 2012–2012
Top patents by PatentIndex Score
4 records- 0182US8916434B2Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM processSUN SHAN·Filed 2012·Granted Dec 23, 2014·6 cites·11 claims
- 0280US8552515B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing stepsSUN SHAN·Filed 2012·Granted Oct 8, 2013·5 cites·71 claims
- 0379US8518792B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structureSUN SHAN·Filed 2012·Granted Aug 27, 2013·5 cites·33 claims
- 0447US8518791B2Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitorsSUN SHAN·Filed 2012·Granted Aug 27, 2013·0 cites·30 claims
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