Inventor · disambiguated record
Jens Hahn
Also filed as: HAHN JENS
7 granted patents·8 pending applications·31 citations·filing 2001–2017
81Inventor score
Top patents by PatentIndex Score
15 records- 0187US8598714B2Semiconductor device comprising through hole vias having a stress relaxation mechanismHUISINGA TORSTEN·Filed 2010·Granted Dec 3, 2013·11 cites·21 claims
- 0276US7700983B2Transistor, memory cell, memory cell array and method of forming a memory cell arrayQIMONDA AG·Filed 2005·Granted Apr 20, 2010·7 cites·25 claims
- 0367US9831171B2Capacitors with barrier dielectric layers, and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted Nov 28, 2017·3 cites·21 claims
- 0467US8859418B2Methods of forming conductive structures using a dual metal hard mask techniqueHUISINGA TORSTEN·Filed 2012·Granted Oct 14, 2014·2 cites·16 claims
- 0550US6602788B2Process for fabricating an interconnect for contact holesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 5, 2003·5 cites·19 claims
- 0645US7214610B2Process for producing aluminum-filled contact holesINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 8, 2007·1 cites·18 claims
- 0743US7157381B2Method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuitsNANYA TECHNOLOGY CORP·Filed 2004·Granted Jan 2, 2007·2 cites·7 claims
- 0842US2018033723A1Capacitors with Barrier Dielectric Layers, and Methods of Formation ThereofINFINEON TECHNOLOGIES AG·Filed 2017·Application pending·0 cites
- 0940US2006228876A1Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1037US2013108779A1Methods of Filling Voids in Copper StructuresHUISINGA TORSTEN·Filed 2011·Application pending·0 cites
- 1137US2013302974A1Replacement gate electrode fill at reduced temperaturesHAHN JENS·Filed 2012·Application pending·0 cites
- 1236US2012199980A1Integrated circuits having interconnect structures and methods for fabricating integrated circuits having interconnect structuresPFUETZNER EGON R·Filed 2011·Application pending·0 cites
- 1334US2007243708A1Manufacturing method for an integrated semiconductor contact structure having an improved aluminum fillHAHN JENS·Filed 2006·Application pending·0 cites
- 1432US2008124920A1Fabrication method for an integrated circuit structureFITZ CLEMENS·Filed 2007·Application pending·0 cites
- 1530US2005202617A1Gate structure for a transistor and method for fabricating the gate structureFiled 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →