Inventor · disambiguated record
Nagarajan Rajagopalan
Also filed as: RAJAGOPALAN NAGARAJAN
26 granted patents·13 pending applications·738 citations·filing 2002–2024
96Inventor score
Top patents by PatentIndex Score
39 records- 0197US9157730B2PECVD processAPPLIED MATERIALS INC·Filed 2013·Granted Oct 13, 2015·49 cites·18 claims
- 0296US9458537B2PECVD processAPPLIED MATERIALS INC·Filed 2015·Granted Oct 4, 2016·12 cites·20 claims
- 0396US8076250B1PECVD oxide-nitride and oxide-silicon stacks for 3D memory applicationRAJAGOPALAN NAGARAJAN·Filed 2010·Granted Dec 13, 2011·488 cites·20 claims
- 0495US9816187B2PECVD processAPPLIED MATERIALS INC·Filed 2016·Granted Nov 14, 2017·8 cites·20 claims
- 0594US7297376B1Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layersAPPLIED MATERIALS INC·Filed 2006·Granted Nov 20, 2007·33 cites·26 claims
- 0693US11613812B2PECVD processAPPLIED MATERIALS INC·Filed 2020·Granted Mar 28, 2023·2 cites·20 claims
- 0791US6656840B2Method for forming silicon containing layers on a substrateAPPLIED MATERIALS INC·Filed 2002·Granted Dec 2, 2003·54 cites·18 claims
- 0890US10793954B2PECVD processAPPLIED MATERIALS INC·Filed 2018·Granted Oct 6, 2020·3 cites·13 claims
- 0990US10060032B2PECVD processAPPLIED MATERIALS INC·Filed 2017·Granted Aug 28, 2018·3 cites·20 claims
- 1087US8283237B2Fabrication of through-silicon vias on silicon wafersRAJAGOPALAN NAGARAJAN·Filed 2010·Granted Oct 9, 2012·11 cites·34 claims
- 1186US7410916B2Method of improving initiation layer for low-k dielectric film by digital liquid flow meterAPPLIED MATERIALS INC·Filed 2006·Granted Aug 12, 2008·9 cites·18 claims
- 1285US11898249B2PECVD processAPPLIED MATERIALS INC·Filed 2023·Granted Feb 13, 2024·0 cites·17 claims
- 1385US8563095B2Silicon nitride passivation layer for covering high aspect ratio featuresRAJAGOPALAN NAGARAJAN·Filed 2010·Granted Oct 22, 2013·11 cites·35 claims
- 1480US8329575B2Fabrication of through-silicon vias on silicon wafersRAJAGOPALAN NAGARAJAN·Filed 2010·Granted Dec 11, 2012·6 cites·24 claims
- 1580US7229911B2Adhesion improvement for low k dielectrics to conductive materialsAPPLIED MATERIALS INC·Filed 2004·Granted Jun 12, 2007·24 cites·9 claims
- 1679US9490116B2Gate stack materials for semiconductor applications for lithographic overlay improvementAPPLIED MATERIALS INC·Filed 2015·Granted Nov 8, 2016·3 cites·20 claims
- 1773US10030306B2PECVD apparatus and processAPPLIED MATERIALS INC·Filed 2013·Granted Jul 24, 2018·1 cites·16 claims
- 1872US2025101578A1Modified stacks for 3d nandAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1970US7371427B2Reduction of hillocks prior to dielectric barrier deposition in Cu damasceneAPPLIED MATERIALS INC·Filed 2003·Granted May 13, 2008·11 cites·6 claims
- 2069US7947611B2Method of improving initiation layer for low-k dielectric film by digital liquid flow meterAPPLIED MATERIALS INC·Filed 2008·Granted May 24, 2011·2 cites·10 claims
- 2166US9972487B2Dielectric-metal stack for 3D flash memory applicationAPPLIED MATERIALS INC·Filed 2015·Granted May 15, 2018·1 cites·20 claims
- 2259US7723228B2Reduction of hillocks prior to dielectric barrier deposition in Cu damasceneAPPLIED MATERIALS INC·Filed 2003·Granted May 25, 2010·6 cites·12 claims
- 2358US2025149373A1Soft touch coating materials for substrate handlingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2457US12195846B2Modified stacks for 3D NANDAPPLIED MATERIALS INC·Filed 2020·Granted Jan 14, 2025·0 cites·12 claims
- 2556US10475644B2Dielectric-metal stack for 3D flash memory applicationAPPLIED MATERIALS INC·Filed 2018·Granted Nov 12, 2019·0 cites·20 claims
- 2655US8298887B2High mobility monolithic p-i-n diodesHAN XINHAI·Filed 2010·Granted Oct 30, 2012·1 cites·18 claims
- 2754US11894228B2Treatments for controlling deposition defectsAPPLIED MATERIALS INC·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 2854US2014272184A1Methods for maintaining clean etch rate and reducing particulate contamination with pecvd of amorphous silicon filimsAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2951US2013230986A1Adhesion improvement for low k dielectrics to conductive materialsAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 3051US2008075888A1Reduction of hillocks prior to dielectric barrier deposition in cu damasceneAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 3149US2009011148A1Methods and apparatuses promoting adhesion of dielectric barrier film to copperAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 3248US2010087062A1High temperature bd development for memory applicationsAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 3344US2014287593A1High throughput multi-layer stack depositionAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 3442US2016260602A1Adhesion improvements for oxide-silicon stackAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 3542US2005233555A1Adhesion improvement for low k dielectrics to conductive materialsRAJAGOPALAN NAGARAJAN·Filed 2004·Application pending·0 cites
- 3640US2005186339A1Methods and apparatuses promoting adhesion of dielectric barrier film to copperAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3739US2006093756A1High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD filmsRAJAGOPALAN NAGARAJAN·Filed 2004·Application pending·0 cites
- 3837US9896326B2FCVD line bending resolution by deposition modulationAPPLIED MATERIALS INC·Filed 2015·Granted Feb 20, 2018·0 cites·13 claims
- 3931US2013161629A1Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate applicationHAN XINHAI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →