US2008075888A1PendingUtilityA1

Reduction of hillocks prior to dielectric barrier deposition in cu damascene

Assignee: APPLIED MATERIALS INCPriority: May 20, 2003Filed: Oct 22, 2007Published: Mar 27, 2008
Est. expiryMay 20, 2023(expired)· nominal 20-yr term from priority
H10P 52/403H10W 20/097H10W 20/031H10W 20/062C23C 16/4404C23G 5/00
51
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Claims

Abstract

Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

Claims

exact text as granted — not AI-modified
1 - 3 . (canceled)  
     
     
         4 . A method of preconditioning a processing chamber that is to be utilized to form a barrier layer on top of a copper layer, the method comprising: 
 seasoning a processing chamber with a deposited material prior to introduction of a substrate bearing a copper layer; and    exposing the seasoned processing chamber to a plasma prior to introduction of a substrate bearing a copper layer.    
     
     
         5 . The method of  claim 4  wherein the plasma is generated in the processing chamber.  
     
     
         6 . The method of  claim 4  wherein the plasma is generated remote from the processing chamber.  
     
     
         7 . The method of  claim 4  wherein the plasma is generated from a gas comprising N2, N2O, NH3, or a noble gas.  
     
     
         8 . The method of  claim 4  further comprising: 
 introducing a substrate bearing a copper layer into the processing chamber; and    forming a barrier layer over the copper layer.    
     
     
         9 . The method of  claim 8  wherein forming the barrier layer comprises depositing a barrier layer selected from the group consisting of SiCN, oxygen doped SiC, SiN, TiN, Ta, TaN, and Ta/TaN.  
     
     
         10 . The method of  claim 8  further comprising: 
 from a gas distribution faceplate prior to receiving the substrate.    
     
     
         11 - 20 . (canceled)

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