Inventor · disambiguated record
Axel Preusse
Also filed as: PREUSSE AXEL
30 granted patents·13 pending applications·176 citations·filing 1999–2014
96Inventor score
Top patents by PatentIndex Score
43 records- 0180US7745327B2Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regimeADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 29, 2010·13 cites·18 claims
- 0280US6951816B2Method of forming a metal layer over patterned dielectric by electroless deposition using a catalystADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 4, 2005·25 cites·28 claims
- 0378US8883610B2Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal linesSEIDEL ROBERT·Filed 2009·Granted Nov 11, 2014·8 cites·11 claims
- 0478US6620726B1Method of forming metal lines having improved uniformity on a substrateADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 16, 2003·21 cites·57 claims
- 0577US6974530B2Method and system for controlling ion distribution during plating of a metal on a workpiece surfaceADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 13, 2005·13 cites·12 claims
- 0676US7985329B2Technique for electrochemically depositing an alloy having a chemical orderADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 26, 2011·7 cites·15 claims
- 0775US8314494B2Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devicesNOPPER MARKUS·Filed 2009·Granted Nov 20, 2012·9 cites·19 claims
- 0874US9620453B2Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 11, 2017·6 cites·24 claims
- 0972US9305878B2Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnectsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 5, 2016·2 cites·19 claims
- 1071US6761812B2Apparatus and method for electrochemical metal depositionADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 13, 2004·6 cites·15 claims
- 1170US8932911B2Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnectsGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 13, 2015·2 cites·19 claims
- 1266US7517782B2Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phaseADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 14, 2009·2 cites·26 claims
- 1365US7947158B2Apparatus and method for removing bubbles from a process liquidGLOBALFOUNDRIES INC·Filed 2009·Granted May 24, 2011·2 cites·15 claims
- 1465US7375031B2Technique for forming interconnect structures with reduced electro and stress migration and/or resistivityADVANCED MICRO DEVICES INC·Filed 2005·Granted May 20, 2008·5 cites·32 claims
- 1561US8450197B2Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forcesPREUSSE AXEL·Filed 2010·Granted May 28, 2013·2 cites·11 claims
- 1661US6958247B2Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP processADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 25, 2005·10 cites·18 claims
- 1759US7560381B2Technique for metal deposition by electroless plating using an activation scheme including a substrate heating processADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 14, 2009·1 cites·15 claims
- 1858US6106680AApparatus for forming a copper interconnectAMD·Filed 1999·Granted Aug 22, 2000·19 cites·10 claims
- 1956US6362100B1Methods and apparatus for forming a copper interconnectADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 26, 2002·4 cites·11 claims
- 2054US7981793B2Method of forming a metal directly on a conductive barrier layer by electrochemical deposition using an oxygen-depleted ambientADVANCED MICRO DEVICES INC·Filed 2008·Granted Jul 19, 2011·0 cites·22 claims
- 2154US6103086AMethod of forming reliable copper interconnects with improved hole fillingADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 15, 2000·10 cites·14 claims
- 2252US8951900B2Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forcesGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 10, 2015·0 cites·21 claims
- 2352US6841056B2Apparatus and method for treating a substrate electrochemically while reducing metal corrosionADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 11, 2005·3 cites·25 claims
- 2451US7169664B2Method of reducing wafer contamination by removing under-metal layers at the wafer edgeADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 30, 2007·3 cites·17 claims
- 2549US8153524B2Providing superior electromigration performance and reducing deterioration of sensitive low-k dielectrics in metallization systems of semiconductor devicesAUBEL OLIVER·Filed 2010·Granted Apr 10, 2012·1 cites·20 claims
- 2649US7781329B2Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2009·Granted Aug 24, 2010·0 cites·24 claims
- 2749US6774030B2Method and system for improving the manufacturing of metal damascene structuresADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 10, 2004·2 cites·18 claims
- 2847US2009061629A1Method of forming a metal directly on a conductive barrier layer by electrochemical deposition using an oxygen-depleted ambientPREUSSE AXEL·Filed 2008·Application pending·0 cites
- 2946US7615103B2Apparatus and method for removing bubbles from a process liquidADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 10, 2009·0 cites·21 claims
- 3044US7476552B2Method of reworking a semiconductor structureADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 13, 2009·0 cites·18 claims
- 3144US2008182409A1Method of forming a metal layer over a patterned dielectric by electroless deposition using a selectively provided activation layerSEIDEL ROBERT·Filed 2007·Application pending·0 cites
- 3242US2005067288A1Storage tank for process liquids with a reduced amount of bubblesFiled 2004·Application pending·0 cites
- 3341US2005241947A1System and method for an increased bath lifetime in a single-use plating regimeNOPPER MARKUS·Filed 2005·Application pending·0 cites
- 3441US2005067290A1Method and system for automatically controlling a current distribution of a multi-anode arrangement during the plating of a metal on a substrate surfaceFiled 2004·Application pending·0 cites
- 3540US2003221966A1Method of electroplating copper over a patterned dielectric layerFiled 2002·Application pending·0 cites
- 3639US8389401B2Contact elements of semiconductor devices formed on the basis of a partially applied activation layerSEIDEL ROBERT·Filed 2010·Granted Mar 5, 2013·0 cites·17 claims
- 3738US2004188260A1Method of plating a semiconductor structureFiled 2003·Application pending·0 cites
- 3837US2006193992A1Method and system for controlling a substrate position in an electrochemical processBONKASS MATTHIAS·Filed 2005·Application pending·0 cites
- 3937US2004000234A1System and method for reducing the chemical reactivity of water and other chemicals used in the fabrication of integrated circuitsFiled 2002·Application pending·0 cites
- 4037US2007178690A1Semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrityNOPPER MARKUS·Filed 2006·Application pending·0 cites
- 4137US2004009670A1Apparatus and method for reducing oxidation of polished metal surfaces in a chemical mechanical polishing processFiled 2003·Application pending·0 cites
- 4236US2010289125A1Enhanced electromigration performance of copper lines in metallization systems of semiconductor devices by surface alloyingFEUSTEL FRANK·Filed 2010·Application pending·0 cites
- 4333US2008206986A1Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regimePREUSSE AXEL·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →