Inventor · disambiguated record
Jeffrey W. Sleight
Also filed as: SLEIGHT JEFFREY · SLEIGHT JEFFREY W · SLEIGHT JEFFREY WILLIAM
289 granted patents·35 pending applications·3,068 citations·filing 1996–2024
99Inventor score
Top patents by PatentIndex Score
324 records- 0199US7892945B2Nanowire mesh device and method of fabricating sameIBM·Filed 2010·Granted Feb 22, 2011·97 cites·13 claims
- 0298US8785981B1Non-replacement gate nanomesh field effect transistor with pad regionsIBM·Filed 2013·Granted Jul 22, 2014·49 cites·10 claims
- 0398US8669615B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·47 cites·15 claims
- 0498US8536029B1Nanowire FET and finFETCHANG JOSEPHINE B·Filed 2012·Granted Sep 17, 2013·48 cites·20 claims
- 0597US9287360B1III-V nanowire FET with compositionally-graded channel and wide-bandgap coreIBM·Filed 2015·Granted Mar 15, 2016·22 cites·11 claims
- 0697US8936972B2Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device widthBANGSARUNTIP SARUNYA·Filed 2012·Granted Jan 20, 2015·29 cites·22 claims
- 0797US8809131B2Replacement gate fin first wire last gate all around devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Aug 19, 2014·35 cites·26 claims
- 0897US8722472B2Hybrid CMOS nanowire mesh device and FINFET deviceCHANG JOSEPHINE B·Filed 2011·Granted May 13, 2014·40 cites·12 claims
- 0997US8658518B1Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devicesCHANG JOSEPHINE B·Filed 2012·Granted Feb 25, 2014·29 cites·20 claims
- 1097US8580624B2Nanowire FET and finFET hybrid technologyBANGSARUNTIP SARUNYA·Filed 2011·Granted Nov 12, 2013·36 cites·21 claims
- 1197US8551833B2Double gate planar field effect transistorsCHANG JOSEPHINE B·Filed 2011·Granted Oct 8, 2013·32 cites·17 claims
- 1297US8466012B1Bulk FinFET and SOI FinFET hybrid technologyCHANG JOSEPHINE B·Filed 2012·Granted Jun 18, 2013·40 cites·21 claims
- 1397US8395220B2Nanomesh SRAM cellCHANG JOSEPHINE·Filed 2012·Granted Mar 12, 2013·33 cites·19 claims
- 1497US8084308B2Single gate inverter nanowire meshCHANG JOSEPHINE·Filed 2009·Granted Dec 27, 2011·83 cites·9 claims
- 1597US8012820B2Ultra-thin SOI CMOS with raised epitaxial source and drain and embedded SiGe PFET extensionIBM·Filed 2011·Granted Sep 6, 2011·38 cites·13 claims
- 1697US7893492B2Nanowire mesh device and method of fabricating sameIBM·Filed 2009·Granted Feb 22, 2011·76 cites·10 claims
- 1797US7884004B2Maskless process for suspending and thinning nanowiresIBM·Filed 2009·Granted Feb 8, 2011·51 cites·19 claims
- 1897US7605429B2Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancementIBM·Filed 2005·Granted Oct 20, 2009·127 cites·15 claims
- 1997US7329923B2High-performance CMOS devices on hybrid crystal oriented substratesIBM·Filed 2003·Granted Feb 12, 2008·138 cites·5 claims
- 2096US9397199B1Methods of forming multi-Vt III-V TFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 19, 2016·14 cites·1 claims
- 2196US8778768B1Non-replacement gate nanomesh field effect transistor with epitixially grown source and drainIBM·Filed 2013·Granted Jul 15, 2014·89 cites·14 claims
- 2296US8441043B2Maskless process for suspending and thinning nanowiresBANGSARUNTIP SARUNYA·Filed 2011·Granted May 14, 2013·23 cites·8 claims
- 2396US8324940B2Nanowire circuits in matched devicesBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·18 cites·11 claims
- 2496US8216902B2Nanomesh SRAM cellCHANG JOSEPHINE·Filed 2009·Granted Jul 10, 2012·50 cites·5 claims
- 2596US8018007B2Selective floating body SRAM cellIBM·Filed 2009·Granted Sep 13, 2011·34 cites·13 claims
- 2696US7718496B2Techniques for enabling multiple Vt devices using high-K metal gate stacksIBM·Filed 2007·Granted May 18, 2010·32 cites·5 claims
- 2795US9437443B2Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitridesGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 6, 2016·26 cites·19 claims
- 2895US9209095B2III-V, Ge, or SiGe fin base lateral bipolar transistor structure and methodIBM·Filed 2014·Granted Dec 8, 2015·18 cites·18 claims
- 2995US8928083B2Diode structure and method for FINFET technologiesIBM·Filed 2013·Granted Jan 6, 2015·18 cites·10 claims
- 3095US8900959B2Non-replacement gate nanomesh field effect transistor with pad regionsIBM·Filed 2013·Granted Dec 2, 2014·18 cites·15 claims
- 3195US8709888B2Hybrid CMOS nanowire mesh device and PDSOI deviceCHANG JOSEPHINE B·Filed 2011·Granted Apr 29, 2014·23 cites·11 claims
- 3295US8673731B2Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 18, 2014·19 cites·19 claims
- 3395US8669167B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·19 cites·19 claims
- 3495US8541774B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Sep 24, 2013·18 cites·12 claims
- 3595US8422273B2Nanowire mesh FET with multiple threshold voltagesCHANG JOSEPHINE·Filed 2009·Granted Apr 16, 2013·39 cites·9 claims
- 3695US8384065B2Gate-all-around nanowire field effect transistorsIBM·Filed 2009·Granted Feb 26, 2013·34 cites·35 claims
- 3795US8173993B2Gate-all-around nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted May 8, 2012·35 cites·27 claims
- 3895US8097515B2Self-aligned contacts for nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2009·Granted Jan 17, 2012·36 cites·16 claims
- 3994US9548381B1Method and structure for III-V nanowire tunnel FETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 17, 2017·11 cites·8 claims
- 4094US9536794B2Techniques for dual dielectric thickness for a nanowire CMOS technology using oxygen growthIBM·Filed 2015·Granted Jan 3, 2017·10 cites·20 claims
- 4194US9391163B2Stacked planar double-gate lamellar field-effect transistorIBM·Filed 2014·Granted Jul 12, 2016·11 cites·1 claims
- 4294US9362354B1Tuning gate lengths in semiconductor device structuresIBM·Filed 2015·Granted Jun 7, 2016·10 cites·15 claims
- 4394US8878298B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2012·Granted Nov 4, 2014·17 cites·16 claims
- 4494US8809957B2Nanowire FET and FinFET hybrid technologyIBM·Filed 2013·Granted Aug 19, 2014·14 cites·6 claims
- 4594US8420455B2Generation of multiple diameter nanowire field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Apr 16, 2013·17 cites·22 claims
- 4694US8324030B2Nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·17 cites·14 claims
- 4794US8212322B2Techniques for enabling multiple Vt devices using high-K metal gate stacksFRANK MARTIN M·Filed 2010·Granted Jul 3, 2012·16 cites·18 claims
- 4894US8110467B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2009·Granted Feb 7, 2012·24 cites·11 claims
- 4994US7274072B2Hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performanceIBM·Filed 2005·Granted Sep 25, 2007·33 cites·30 claims
- 5093US9812370B2III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technologyIBM·Filed 2016·Granted Nov 7, 2017·7 cites·10 claims
Showing the top 50 of 324 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →