Inventor · disambiguated record
Fusen Chen
Also filed as: CHEN FUSEN · CHEN FUSEN E
103 granted patents·19 pending applications·4,200 citations·filing 1988–2018
99Inventor score
Files withAPPLIED MATERIALS INC69SGS THOMSON MICROELECTRONICS35ST MICROELECTRONICS INC9CHIANG TONY2DING PEIJUN2
Top patents by PatentIndex Score
122 records- 0199US6679981B1Inductive plasma loop enhancing magnetron sputteringAPPLIED MATERIALS INC·Filed 2000·Granted Jan 20, 2004·329 cites·11 claims
- 0299US6306265B1High-density plasma for ionized metal deposition capable of exciting a plasma waveAPPLIED MATERIALS INC·Filed 2000·Granted Oct 23, 2001·138 cites·22 claims
- 0398US6277249B1Integrated process for copper via filling using a magnetron and target producing highly energetic ionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 21, 2001·273 cites·27 claims
- 0498US6274008B1Integrated process for copper via fillingAPPLIED MATERIALS INC·Filed 2000·Granted Aug 14, 2001·231 cites·19 claims
- 0598US6217721B1Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layerAPPLIED MATERIALS INC·Filed 1996·Granted Apr 17, 2001·206 cites·59 claims
- 0697US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 0797US7026238B2Reliability barrier integration for Cu applicationAPPLIED MATERIALS INC·Filed 2002·Granted Apr 11, 2006·99 cites·21 claims
- 0897US6919275B2Method of preventing diffusion of copper through a tantalum-comprising barrier layerAPPLIED MATERIALS INC·Filed 2004·Granted Jul 19, 2005·87 cites·4 claims
- 0997US6784096B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2002·Granted Aug 31, 2004·137 cites·73 claims
- 1097US6451177B1Vault shaped target and magnetron operable in two sputtering modesAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·103 cites·26 claims
- 1197US5903428AHybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating sameAPPLIED MATERIALS INC·Filed 1997·Granted May 11, 1999·300 cites·19 claims
- 1294US6991709B2Multi-step magnetron sputtering processAPPLIED MATERIALS INC·Filed 2004·Granted Jan 31, 2006·46 cites·24 claims
- 1394US6787006B2Operating a magnetron sputter reactor in two modesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 7, 2004·53 cites·31 claims
- 1494US6758947B2Damage-free sculptured coating depositionAPPLIED MATERIALS INC·Filed 2001·Granted Jul 6, 2004·47 cites·29 claims
- 1594US5130268AMethod for forming planarized shallow trench isolation in an integrated circuit and a structure formed therebySGS THOMSON MICROELECTRONICS·Filed 1991·Granted Jul 14, 1992·138 cites·10 claims
- 1693US6610189B2Method and associated apparatus to mechanically enhance the deposition of a metal film within a featureAPPLIED MATERIALS INC·Filed 2001·Granted Aug 26, 2003·35 cites·22 claims
- 1792US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 1892US7381639B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 3, 2008·10 cites·13 claims
- 1992US6974771B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2004·Granted Dec 13, 2005·46 cites·15 claims
- 2092US6485618B2Integrated copper fill processAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·47 cites·26 claims
- 2191US9390970B2Method for depositing a diffusion barrier layer and a metal conductive layerCHIANG TONY·Filed 2007·Granted Jul 12, 2016·10 cites·69 claims
- 2291US6139697ALow temperature integrated via and trench fill process and apparatusAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·117 cites·18 claims
- 2390US7074714B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2004·Granted Jul 11, 2006·26 cites·3 claims
- 2489US5410176AIntegrated circuit with planarized shallow trench isolationSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Apr 25, 1995·91 cites·16 claims
- 2588US6790323B2Self ionized sputtering using a high density plasma sourceAPPLIED MATERIALS INC·Filed 2001·Granted Sep 14, 2004·22 cites·36 claims
- 2688US6238528B1Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma sourceAPPLIED MATERIALS INC·Filed 1998·Granted May 29, 2001·55 cites·30 claims
- 2787US5877087ALow temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 1995·Granted Mar 2, 1999·69 cites·11 claims
- 2886US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 2986US6566258B1Bi-layer etch stop for inter-level viaAPPLIED MATERIALS INC·Filed 2000·Granted May 20, 2003·42 cites·14 claims
- 3086US5260229AMethod of forming isolated regions of oxideSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Nov 9, 1993·86 cites·13 claims
- 3186US5108951AMethod for forming a metal contactSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Apr 28, 1992·80 cites·19 claims
- 3285US6399479B1Processes to improve electroplating fillAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·74 cites·20 claims
- 3384US7294574B2Sputter deposition and etching of metallization seed layer for overhang and sidewall improvementAPPLIED MATERIALS INC·Filed 2004·Granted Nov 13, 2007·36 cites·40 claims
- 3484US6913680B1Method of application of electrical biasing to enhance metal depositionAPPLIED MATERIALS INC·Filed 2000·Granted Jul 5, 2005·30 cites·17 claims
- 3584US6514390B1Method to eliminate coil sputtering in an ICP sourceAPPLIED MATERIALS INC·Filed 1996·Granted Feb 4, 2003·42 cites·21 claims
- 3683US7687909B2Metal / metal nitride barrier layer for semiconductor device applicationsAPPLIED MATERIALS INC·Filed 2007·Granted Mar 30, 2010·7 cites·13 claims
- 3781US7547644B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2005·Granted Jun 16, 2009·5 cites·30 claims
- 3881US6066358ABlanket-selective chemical vapor deposition using an ultra-thin nucleation layerAPPLIED MATERIALS INC·Filed 1996·Granted May 23, 2000·62 cites·16 claims
- 3981US5841624ACover layer for a substrate support chuck and method of fabricating sameAPPLIED MATERIALS INC·Filed 1997·Granted Nov 24, 1998·60 cites·20 claims
- 4080US7989343B2Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor featuresAPPLIED MATERIALS INC·Filed 2010·Granted Aug 2, 2011·2 cites·13 claims
- 4180US6238803B1Titanium nitride barrier layersAPPLIED MATERIALS INC·Filed 2000·Granted May 29, 2001·20 cites·9 claims
- 4280US6120844ADeposition film orientation and reflectivity improvement using a self-aligning ultra-thin layerAPPLIED MATERIALS INC·Filed 1996·Granted Sep 19, 2000·57 cites·18 claims
- 4378US5270254AIntegrated circuit metallization with zero contact enclosure requirements and method of making the sameSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Dec 14, 1993·51 cites·16 claims
- 4477US8696875B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2002·Granted Apr 15, 2014·15 cites·61 claims
- 4576US7795138B2Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrateAPPLIED MATERIALS INC·Filed 2009·Granted Sep 14, 2010·2 cites·16 claims
- 4676US6110821AMethod for forming titanium silicide in situAPPLIED MATERIALS INC·Filed 1998·Granted Aug 29, 2000·37 cites·12 claims
- 4773US8158511B2Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor featuresCHIANG TONY·Filed 2011·Granted Apr 17, 2012·1 cites·11 claims
- 4872US5523624AIntegrated circuit device structure with dielectric and metal stacked plug in contact holeSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Jun 4, 1996·28 cites·32 claims
- 4971US6537905B1Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plugAPPLIED MATERIALS INC·Filed 1996·Granted Mar 25, 2003·37 cites·25 claims
- 5069US7112528B2Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plugAPPLIED MATERIALS INC·Filed 2003·Granted Sep 26, 2006·14 cites·8 claims
Showing the top 50 of 122 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →