Inventor · disambiguated record
Masayoshi Hirasawa
Also filed as: HIRASAWA MASAYOSHI
13 granted patents·3 pending applications·418 citations·filing 1998–2011
94Inventor score
Top patents by PatentIndex Score
16 records- 0193US6028360ASemiconductor integrated circuit device in which a conductive film is formed over a trap film which in turn is formed over a titanium filmHITACHI LTD·Filed 1998·Granted Feb 22, 2000·101 cites·2 claims
- 0291US6258649B1Semiconductor integrated circuit device and method of manufacturing the sameHITACHI LTD·Filed 1999·Granted Jul 10, 2001·91 cites·11 claims
- 0389US8017464B2Semiconductor integrated circuit device and a method for manufacturing a semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Sep 13, 2011·12 cites·24 claims
- 0488US6215144B1Semiconductor integrated circuit device, and method of manufacturing the sameHITACHI LTD·Filed 1999·Granted Apr 10, 2001·73 cites·19 claims
- 0587US6756262B1Semiconductor integrated circuit device having spaced-apart electrodes and the method thereofHITACHI LTD·Filed 2000·Granted Jun 29, 2004·46 cites·13 claims
- 0687US6399438B2Method of manufacturing semiconductor integrated circuit device having a capacitorHITACHI LTD·Filed 2001·Granted Jun 4, 2002·32 cites·17 claims
- 0775US6605530B2Method for fabricating semiconductor integrated circuitHITACHI LTD·Filed 2002·Granted Aug 12, 2003·14 cites·24 claims
- 0873US6833331B2Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogenHITACHI LTD·Filed 2002·Granted Dec 21, 2004·13 cites·10 claims
- 0971US6853081B2Method for fabricating semiconductor integrated circuitHITACHI LTD·Filed 2003·Granted Feb 8, 2005·11 cites·18 claims
- 1069US6509277B1Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogenHITACHI LTD·Filed 2000·Granted Jan 21, 2003·10 cites·26 claims
- 1168US6638811B2Method of manufacturing a semiconductor integrated circuit device having a capacitorHITACHI LTD·Filed 2002·Granted Oct 28, 2003·9 cites·8 claims
- 1256US6492730B1Method for fabricating semiconductor integrated circuitHITACHI LTD·Filed 2000·Granted Dec 10, 2002·4 cites·10 claims
- 1350US7119443B2Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen elementHITACHI LTD·Filed 2004·Granted Oct 10, 2006·2 cites·5 claims
- 1447US2012061769A1Semiconductor integrated circuit device and a method for manufacturing a semiconductor integrated circuit deviceSUGIYAMA MASAO·Filed 2011·Application pending·0 cites
- 1542US2003132479A1Semiconductor integrated circuit device and method of manufacturing the sameFiled 2003·Application pending·0 cites
- 1640US2001028082A1Semiconductor integrated circuit device and method of manufacturing the sameFiled 2001·Application pending·0 cites
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