Inventor · disambiguated record
Hui-Min Mao
Also filed as: MAO HUI · MAO HUI-MIN
33 granted patents·5 pending applications·157 citations·filing 2000–2020
96Inventor score
Top patents by PatentIndex Score
38 records- 0183US7419882B2Alignment mark and alignment method for the fabrication of trench-capacitor dram devicesNANYA TECHNOLOGY CORP·Filed 2005·Granted Sep 2, 2008·13 cites·5 claims
- 0277US10713804B2Method for obtaining combined depth image, and depth cameraHANGZHOU HIKVISION DIGITAL TEC·Filed 2016·Granted Jul 14, 2020·3 cites·15 claims
- 0376US7211483B2Memory device with vertical transistors and deep trench capacitors and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2005·Granted May 1, 2007·4 cites·29 claims
- 0475US7678692B2Fabrication method for a damascene bit line contact plugNANYA TECHNOLOGY CORP·Filed 2006·Granted Mar 16, 2010·6 cites·16 claims
- 0573US6541347B2Method of providing planarity of a photoresistNANYA TECHNOLOGY CORP·Filed 2000·Granted Apr 1, 2003·13 cites·8 claims
- 0672US7723181B2Overlay alignment mark and alignment method for the fabrication of trench-capacitor dram devicesNANYA TECHNOLOGY CORP·Filed 2006·Granted May 25, 2010·6 cites·12 claims
- 0769US6987053B2Method of evaluating reticle pattern overlay registrationNANYA TECHNOLOGY CORP·Filed 2004·Granted Jan 17, 2006·8 cites·22 claims
- 0868US7064044B2Contact etching utilizing multi-layer hard maskNANYA TECHNOLOGY CORP·Filed 2004·Granted Jun 20, 2006·12 cites·10 claims
- 0968US6987322B2Contact etching utilizing multi-layer hard maskNANYA TECHNOLOGY CORP·Filed 2004·Granted Jan 17, 2006·12 cites·8 claims
- 1066US6780739B1Bit line contact structure and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Aug 24, 2004·13 cites·29 claims
- 1166US6774007B2Method of fabricating shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2002·Granted Aug 10, 2004·14 cites·9 claims
- 1265US6833081B2Method of metal etching post cleaningNANYA TECHNOLOGY CORP·Filed 2002·Granted Dec 21, 2004·10 cites·19 claims
- 1364US10447989B2Method and device for synthesizing depth imagesHANGZHOU HIKVISION DIGITAL TEC·Filed 2016·Granted Oct 15, 2019·1 cites·15 claims
- 1457US6960525B2Method of forming metal plugNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 1, 2005·7 cites·28 claims
- 1553US7105453B2Method for forming contact holesNANYA TECHNOLOGY CORP·Filed 2004·Granted Sep 12, 2006·7 cites·26 claims
- 1653US7009236B2Memory device with vertical transistors and deep trench capacitors and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 7, 2006·4 cites·12 claims
- 1753US6790765B1Method for forming contactNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 14, 2004·5 cites·14 claims
- 1851US6709975B2Method of forming inter-metal dielectricNANYA TECHNOLOGY CORP·Filed 2002·Granted Mar 23, 2004·4 cites·20 claims
- 1950US6977134B2Manufacturing method of a MOSFET gateNANYA TECHNOLOGY CORP·Filed 2003·Granted Dec 20, 2005·4 cites·26 claims
- 2049US12487455B2Augmented reality device and exposure deviceHANGZHOU HIKVISION DIGITAL TEC·Filed 2020·Granted Dec 2, 2025·0 cites·8 claims
- 2149US6838866B2Process for measuring depth of source and drainNANYA TECHNOLOGY CORP·Filed 2002·Granted Jan 4, 2005·2 cites·2 claims
- 2249US2007018341A1Contact etching utilizing partially recessed hard maskNANYA TECHNOLOGY CORP·Filed 2006·Application pending·0 cites
- 2347US2005168740A1Method of evaluating reticle pattern overlay registrationNANYA TECHNOLOGY CORP·Filed 2005·Application pending·0 cites
- 2447US2006118886A1Method of forming bit line contact viaNANYA TECHNOLOGY CORP·Filed 2006·Application pending·0 cites
- 2546US6706587B1Method for forming buried platesNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 16, 2004·4 cites·14 claims
- 2646US2005164491A1Bit line contact hole and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2005·Application pending·0 cites
- 2745US6909136B2Trench-capacitor DRAM cell having a folded gate conductorNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 21, 2005·3 cites·9 claims
- 2844US10755381B2Method and device for image stitchingHANGZHOU HIKVISION DIGITAL TEC·Filed 2016·Granted Aug 25, 2020·0 cites·19 claims
- 2944US6790735B2Method of forming source/drain regions in semiconductor devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 14, 2004·2 cites·27 claims
- 3043US11869255B2Anti-counterfeiting face detection method, device and multi-lens cameraHANGZHOU HIKVISION DIGITAL TEC·Filed 2019·Granted Jan 9, 2024·0 cites·8 claims
- 3143US7135783B2Contact etching utilizing partially recessed hard maskNANYA TECHNOLOGY CORP·Filed 2004·Granted Nov 14, 2006·0 cites·7 claims
- 3241US7285377B2Fabrication method for a damascene bit line contact plugNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 23, 2007·0 cites·15 claims
- 3341US7195975B2Method of forming bit line contact viaNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 27, 2007·0 cites·19 claims
- 3441US2004201043A1Bit line contact hole and method for forming the sameFiled 2003·Application pending·0 cites
- 3538US11209268B2Depth measuring method and systemHANGZHOU HIKVISION DIGITAL TEC·Filed 2017·Granted Dec 28, 2021·0 cites·15 claims
- 3638US11158089B2Camera parameter calibration method, device, apparatus, and systemHANGZHOU HIKVISION DIGITAL TEC·Filed 2018·Granted Oct 26, 2021·0 cites·17 claims
- 3737US11107277B2Method and device for constructing 3D scene modelHANGZHOU HIKVISION DIGITAL TEC·Filed 2017·Granted Aug 31, 2021·0 cites·12 claims
- 3826US6703311B2Method for estimating capacitance of deep trench capacitorsNAENAYA TECHNOLOGY CORP·Filed 2002·Granted Mar 9, 2004·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →