Inventor · disambiguated record
Kozo Katayama
Also filed as: KATAYAMA KOZO
36 granted patents·3 pending applications·861 citations·filing 1988–2018
98Inventor score
Files withRENESAS ELECTRONICS CORP13HITACHI LTD11RENESAS TECH CORP11HITACHI ULSI SYS CO LTD1HOSODA NAOHIRO1
Top patents by PatentIndex Score
39 records- 0196US8017986B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Sep 13, 2011·22 cites·21 claims
- 0296US7414283B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Aug 19, 2008·29 cites·2 claims
- 0396US6873009B2Vertical semiconductor device with tunnel insulator in current path controlled by gate electrodeHITACHI LTD·Filed 2003·Granted Mar 29, 2005·155 cites·15 claims
- 0495US7700992B2Semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Apr 20, 2010·23 cites·14 claims
- 0595US7057230B2Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speedHITACHI ULSI SYS CO LTD·Filed 2002·Granted Jun 6, 2006·65 cites·21 claims
- 0694US7863670B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Jan 4, 2011·28 cites·4 claims
- 0793US7557005B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Jul 7, 2009·24 cites·4 claims
- 0893US6531735B1Semiconductor integrated circuitHITACHI LTD·Filed 2000·Granted Mar 11, 2003·67 cites·4 claims
- 0993US5323344AQuantum memory deviceHITACHI LTD·Filed 1993·Granted Jun 21, 1994·109 cites·23 claims
- 1092US8956941B2Manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 17, 2015·11 cites·13 claims
- 1192US6504755B1Semiconductor memory deviceHITACHI LTD·Filed 1999·Granted Jan 7, 2003·105 cites·8 claims
- 1287US4856754AConcrete form shuttering having double woven fabric coveringKUMAGAI GUMI CO LTD·Filed 1988·Granted Aug 15, 1989·65 cites·7 claims
- 1385US9184264B2Manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 10, 2015·5 cites·13 claims
- 1480US6646283B1Semiconductor device, image display device, and method and apparatus for manufacture thereofHITACHI LTD·Filed 1999·Granted Nov 11, 2003·47 cites·13 claims
- 1577US9812211B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 7, 2017·1 cites·6 claims
- 1677US8698224B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 15, 2014·2 cites·21 claims
- 1777US8426904B2Semiconductor deviceTANAKA TOSHIHIRO·Filed 2011·Granted Apr 23, 2013·2 cites·14 claims
- 1877US7012296B2Semiconductor integrated circuitRENESAS TECH CORP·Filed 2005·Granted Mar 14, 2006·11 cites·6 claims
- 1977US6653685B2Nonvolatile memory deviceHITACHI LTD·Filed 2001·Granted Nov 25, 2003·17 cites·15 claims
- 2076US9825049B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 21, 2017·2 cites·9 claims
- 2172US7339231B2Semiconductor device and an integrated circuit cardRENESAS TECH CORP·Filed 2005·Granted Mar 4, 2008·8 cites·20 claims
- 2271US9245900B2Semiconductor device and manufacturing method of semiconductor deviceHOSODA NAOHIRO·Filed 2012·Granted Jan 26, 2016·3 cites·11 claims
- 2369US7190023B2Semiconductor integrated circuit having discrete trap type memory cellsRENESAS TECH CORP·Filed 2005·Granted Mar 13, 2007·4 cites·13 claims
- 2466US10354735B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·0 cites·6 claims
- 2566US6674122B2Semiconductor integrated circuitHITACHI LTD·Filed 2003·Granted Jan 6, 2004·9 cites·5 claims
- 2665US10115469B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·6 claims
- 2764US6894344B2Semiconductor integrated circuit having two switch transistors formed between two diffusion-layer linesRENESAS TECH CORP·Filed 2003·Granted May 17, 2005·8 cites·6 claims
- 2859US9412459B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 9, 2016·0 cites·2 claims
- 2954US6936888B2Nonvolatile memory device with multi-bit memory cells having plural side gatesRENESAS TECH CORP·Filed 2003·Granted Aug 30, 2005·4 cites·15 claims
- 3052US5258625AInterband single-electron tunnel transistor and integrated circuitHITACHI LTD·Filed 1992·Granted Nov 2, 1993·13 cites·11 claims
- 3150US2016093716A1Manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3248US7166508B2Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)RENESAS TECH CORP·Filed 2004·Granted Jan 23, 2007·2 cites·14 claims
- 3345US5422496AInterband single-electron tunnel transistor and integrated circuitHITACHI LTD·Filed 1993·Granted Jun 6, 1995·9 cites·13 claims
- 3444US7228377B2Semiconductor integrated circuit device, IC card, and mobile terminalRENESAS TECH CORP·Filed 2004·Granted Jun 5, 2007·4 cites·18 claims
- 3543US7911852B2Nonvolatile semiconductor memory device and operation method thereofRENESAS ELECTRONICS CORP·Filed 2007·Granted Mar 22, 2011·0 cites·6 claims
- 3642US8050085B2Semiconductor processing device and IC cardRENESAS ELECTRONICS CORP·Filed 2002·Granted Nov 1, 2011·4 cites·17 claims
- 3741US6590809B2Non-volatile semiconductor memory deviceHITACHI LTD·Filed 2002·Granted Jul 8, 2003·3 cites·3 claims
- 3839US2006044873A1Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 3939US2003017672A1Nonvolatile memory deviceHITACHI LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →