Inventor · disambiguated record
Jianmin Qiao
Also filed as: QIAO JIANMIN
17 granted patents·1 pending application·1,179 citations·filing 1995–2004
96Inventor score
Files withCYPRESS SEMICONDUCTOR CORP12APPLIED MATERIALS INC4ADVANCED ION BEAM TECHNOLOGY I1ADVANCED OPTICAL SOLUTIONS INC1
Top patents by PatentIndex Score
18 records- 0197US6322716B1Method for conditioning a plasma etch chamberCYPRESS SEMICONDUCTOR CORP·Filed 1999·Granted Nov 27, 2001·222 cites·20 claims
- 0297US6136685AHigh deposition rate recipe for low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1997·Granted Oct 24, 2000·343 cites·14 claims
- 0394US6803318B1Method of forming self aligned contactsCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Oct 12, 2004·94 cites·16 claims
- 0493US6399512B1Method of making metallization and contact structures in an integrated circuit comprising an etch stop layerCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Jun 4, 2002·83 cites·20 claims
- 0593US5885356AMethod of reducing residue accumulation in CVD chamber using ceramic liningAPPLIED MATERIALS INC·Filed 1995·Granted Mar 23, 1999·154 cites·22 claims
- 0690US6350665B1Semiconductor structure and method of making contacts and source and/or drain junctions in a semiconductor deviceCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Feb 26, 2002·55 cites·20 claims
- 0783US6635566B1Method of making metallization and contact structures in an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Oct 21, 2003·31 cites·16 claims
- 0877US5976900AMethod of reducing impurity contamination in semiconductor process chambersCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Nov 2, 1999·52 cites·20 claims
- 0974US6693042B1Method for etching a dielectric layer formed upon a barrier layerCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Feb 17, 2004·17 cites·16 claims
- 1074US6375744B2Sequential in-situ heating and deposition of halogen-doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Apr 23, 2002·17 cites·11 claims
- 1170US6579420B2Apparatus and method for uniformly depositing thin films over substratesADVANCED OPTICAL SOLUTIONS INC·Filed 2001·Granted Jun 17, 2003·13 cites·27 claims
- 1263US6228781B1Sequential in-situ heating and deposition of halogen-doped silicon oxideAPPLIED MATERIALS INC·Filed 1997·Granted May 8, 2001·25 cites·16 claims
- 1361US7183222B2Dual damascene structure and method of makingCYPRESS SEMICONDUCTOR CORP·Filed 2004·Granted Feb 27, 2007·7 cites·4 claims
- 1461US6372634B1Plasma etch chemistry and method of improving etch controlCYPRESS SEMICONDUCTOR CORP·Filed 1999·Granted Apr 16, 2002·26 cites·29 claims
- 1558US6865065B1Semiconductor processing chamber substrate holder method and structureADVANCED ION BEAM TECHNOLOGY I·Filed 2002·Granted Mar 8, 2005·8 cites·20 claims
- 1657US6734108B1Semiconductor structure and method of making contacts in a semiconductor structureCYPRESS SEMICONDUCTOR CORP·Filed 1999·Granted May 11, 2004·21 cites·11 claims
- 1744US6373679B1Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the sameCYPRESS SEMICONDUCTOR CORP·Filed 1999·Granted Apr 16, 2002·11 cites·20 claims
- 1840US2004082182A1Method of making metallization and contact structures in an integrated circuit using a timed trench etchCYPRESS SEMICONDUCTOR CORP·Filed 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jianmin Qiao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →