Inventor · disambiguated record
Michael L. Kerbaugh
Also filed as: KERBAUGH MICHAEL L
10 granted patents·1 pending application·903 citations·filing 1987–2016
92Inventor score
Top patents by PatentIndex Score
11 records- 0197US4838991AProcess for defining organic sidewall structuresIBM·Filed 1988·Granted Jun 13, 1989·362 cites·4 claims
- 0295US4776922AFormation of variable-width sidewall structuresIBM·Filed 1987·Granted Oct 11, 1988·257 cites·6 claims
- 0385US9553145B2Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thicknessGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 24, 2017·5 cites·14 claims
- 0483US4978594AFluorine-containing base layer for multi-layer resist processesIBM·Filed 1988·Granted Dec 18, 1990·39 cites·13 claims
- 0580US5466636AMethod of forming borderless contacts using a removable mandrelIBM·Filed 1992·Granted Nov 14, 1995·63 cites·24 claims
- 0679US9312370B2Bipolar transistor with extrinsic base region and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·4 cites·9 claims
- 0778US5173439AForming wide dielectric-filled isolation trenches in semi-conductorsIBM·Filed 1991·Granted Dec 22, 1992·76 cites·14 claims
- 0867US4799990AMethod of self-aligning a trench isolation structure to an implanted well regionIBM·Filed 1987·Granted Jan 24, 1989·32 cites·11 claims
- 0965US5118384AReactive ion etching buffer maskIBM·Filed 1991·Granted Jun 2, 1992·41 cites·9 claims
- 1053US5298790AReactive ion etching buffer maskIBM·Filed 1992·Granted Mar 29, 1994·24 cites·13 claims
- 1149US2016190292A1Bipolar transistor with extrinsic base region and methods of fabricationGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →