Inventor · disambiguated record
Juri Kato
Also filed as: KATO JURI
36 granted patents·13 pending applications·381 citations·filing 1982–2015
97Inventor score
Top patents by PatentIndex Score
49 records- 0198US7906813B2Semiconductor device having a first circuit block isolating a plurality of circuit blocksSEIKO EPSON CORP·Filed 2007·Granted Mar 15, 2011·110 cites·10 claims
- 0288US10393688B2Sensor deviceSEIKO EPSON CORP·Filed 2015·Granted Aug 27, 2019·3 cites·12 claims
- 0385US7830215B2Piezoelectric oscillator and method for manufacturing the sameSEIKO EPSON CORP·Filed 2008·Granted Nov 9, 2010·12 cites·6 claims
- 0484US9297741B2Corrosion detection sensor deviceSEIKO EPSON CORP·Filed 2015·Granted Mar 29, 2016·2 cites·21 claims
- 0582US9194788B2Corrosion detection sensor deviceKATO JURI·Filed 2012·Granted Nov 24, 2015·4 cites·8 claims
- 0679US8937476B2Corrosion detection sensor device having coating film and measurement methodKATO JURI·Filed 2012·Granted Jan 20, 2015·3 cites·14 claims
- 0777US5641983ASemiconductor device having a gate electrode having a low dopant concentrationSEIKO EPSON CORP·Filed 1995·Granted Jun 24, 1997·33 cites·11 claims
- 0875US7666795B2Method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2007·Granted Feb 23, 2010·5 cites·12 claims
- 0974US7638845B2Semiconductor device with buried conductive layerSEIKO EPSON CORP·Filed 2006·Granted Dec 29, 2009·4 cites·18 claims
- 1074US7332399B2Method for manufacturing a semiconductor substrate and method for manufacturing a semiconductor in which film thicknesses can be accurately controlledSEIKO EPSON CORP·Filed 2005·Granted Feb 19, 2008·6 cites·19 claims
- 1174US5312772AMethod of manufacturing interconnect metallization comprising metal nitride and silicideSEIKO EPSON CORP·Filed 1992·Granted May 17, 1994·35 cites·3 claims
- 1272US9442060B2Corrosion detection sensor deviceKATO JURI·Filed 2012·Granted Sep 13, 2016·2 cites·18 claims
- 1372US9030204B2Sensor deviceMIYAZAWA TAKAO·Filed 2012·Granted May 12, 2015·2 cites·16 claims
- 1472US7271447B2Semiconductor deviceSEIKO EPSON CORP·Filed 2005·Granted Sep 18, 2007·5 cites·2 claims
- 1569US7563665B2Semiconductor device and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2005·Granted Jul 21, 2009·4 cites·6 claims
- 1669US4998157AOhmic contact to silicon substrateSEIKO EPSON CORP·Filed 1989·Granted Mar 5, 1991·23 cites·16 claims
- 1767US7351616B2Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2005·Granted Apr 1, 2008·3 cites·11 claims
- 1865US5229334AMethod of forming a gate insulating film involving a step of cleaning using an ammonia-peroxide solutionSEIKO EPSON CORP·Filed 1991·Granted Jul 20, 1993·37 cites·5 claims
- 1963US7863669B2Nonvolatile semiconductor memory deviceSEIKO EPSON CORP·Filed 2006·Granted Jan 4, 2011·2 cites·9 claims
- 2063US7344997B2Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2005·Granted Mar 18, 2008·2 cites·3 claims
- 2162US7368340B2Semiconductor device and method of making semiconductor devicesSEIKO EPSON CORP·Filed 2006·Granted May 6, 2008·2 cites·4 claims
- 2256US7491609B2Semiconductor device and method for manufacturing the sameSEIKO EPSON CORP·Filed 2005·Granted Feb 17, 2009·1 cites·7 claims
- 2356US7425484B2Method of manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted Sep 16, 2008·1 cites·3 claims
- 2453US7227264B2Semiconductor device and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2004·Granted Jun 5, 2007·5 cites·7 claims
- 2553US2015153399A1Sensor deviceSEIKO EPSON CORP·Filed 2015·Application pending·0 cites
- 2652US7956414B2Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate, and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2008·Granted Jun 7, 2011·0 cites·12 claims
- 2752US4833098APolycrystalline semiconductor deposition in groove for device insolationSIEKO EPSON CORP·Filed 1988·Granted May 23, 1989·15 cites·10 claims
- 2851US7622359B2Method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2008·Granted Nov 24, 2009·0 cites·8 claims
- 2951US5298860AMethod of analyzing metal impurities in surface oxide film of semiconductor substrateSEIKO EPSON CORP·Filed 1991·Granted Mar 29, 1994·15 cites·6 claims
- 3050US5654209AMethod of making N-type semiconductor region by implantationSEIKO EPSON CORP·Filed 1994·Granted Aug 5, 1997·19 cites·10 claims
- 3150US4669176AMethod for diffusing a semiconductor substrate through a metal silicide layer by rapid heatingSEIKO EPSON CORP·Filed 1985·Granted Jun 2, 1987·17 cites·41 claims
- 3250US2008122024A1Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2008·Application pending·0 cites
- 3347US2008145999A1Method for manufacturing a semiconductor deviceSEIKO EPSON CORP·Filed 2007·Application pending·0 cites
- 3447US2008146017A1Method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2007·Application pending·0 cites
- 3546US7898016B2CMOS semiconductor non-volatile memory deviceSEIKO EPSON CORP·Filed 2007·Granted Mar 1, 2011·0 cites·3 claims
- 3645US2007132011A1Semiconductor device and method of fabricating the same backgroundSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 3745US2010194248A1Piezoelectric oscillator and method for manufacturing the sameSEIKO EPSON CORP·Filed 2010·Application pending·0 cites
- 3844US7687866B2Semiconductor device and method of manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted Mar 30, 2010·0 cites·4 claims
- 3944US2007262380A1Semiconductor device and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2007·Application pending·0 cites
- 4042US2007018246A1Semiconductor device and semiconductor device manufacturing methodTOKYO INST TECH·Filed 2006·Application pending·0 cites
- 4140US2007029617A1Semiconductor device and manufacturing method thereofSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 4239US2007075317A1Semiconductor device and semiconductor device manufacturing methodTOKYO INST TECH·Filed 2006·Application pending·0 cites
- 4339US2006197163A1Semiconductor device and method for manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 4439US2006194383A1Semiconductor device and method for manufacturing the sameSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 4538US8017505B2Method for manufacturing a semiconductor deviceSEIKO EPSON CORP·Filed 2007·Granted Sep 13, 2011·0 cites·9 claims
- 4638US2005199965A1Semiconductor device and method for manufacturing semiconductor deviceFiled 2005·Application pending·0 cites
- 4736US6156592AMethod of manufacturing a semiconductor device containing CMOS elementsSEIKO EPSON CORP·Filed 1998·Granted Dec 5, 2000·3 cites·11 claims
- 4835US4800417AImproved semiconductor device having a polycrystalline isolation regionSEIKO EPSON CORP·Filed 1982·Granted Jan 24, 1989·4 cites·4 claims
- 4934US5879979AMethod of manufacturing a semiconductor device containing CMOS elementsSEIKO EPSON CORP·Filed 1995·Granted Mar 9, 1999·2 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →