US2010194248A1PendingUtilityA1

Piezoelectric oscillator and method for manufacturing the same

45
Assignee: SEIKO EPSON CORPPriority: Jan 25, 2007Filed: Apr 13, 2010Published: Aug 5, 2010
Est. expiryJan 25, 2027(~0.5 yrs left)· nominal 20-yr term from priority
Inventors:Takamitsu HiguchiJuri KatoYasuhiro Ono
H03H 3/02H03H 9/0519H03H 9/0542H03H 9/0547H03H 9/21H03H 2003/026
45
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A piezoelectric oscillator includes a substrate, a supporting section formed above the substrate, an oscillation section having one end affixed to the supporting section and another free end, and a driving section that is formed above the oscillation section and generates flexing vibration in the oscillation section. The driving section includes a first electrode, a piezoelectric layer formed above the first electrode, and a second electrode formed above the piezoelectric layer, and the oscillation section is composed of a material that is different from a material of the supporting section. The oscillation section is composed of single crystal silicon, and the supporting section is composed of polycrystal silicon or amorphous silicon.

Claims

exact text as granted — not AI-modified
1 . A piezoelectric oscillator comprising:
 a substrate;   a supporting section formed above the substrate;   an oscillation section having one end affixed to the supporting section and another free end; and   a driving section that is formed above the oscillation section and generates flexing vibration in the oscillation section,   wherein the driving section includes a first electrode, a piezoelectric layer formed above the first electrode, and a second electrode formed above the piezoelectric layer, and the oscillation section is composed of a material different from a material of the supporting section; and   wherein the oscillation section is composed of single crystal silicon, and the supporting section is composed of polycrystal silicon or amorphous silicon.   
   
   
       2 . The piezoelectric oscillator according to  claim 1 , wherein the oscillation section has a thickness of 100 nm or less. 
   
   
       3 . The piezoelectric oscillator according to  claim 1 , wherein the oscillation section has a length of 100 μm or less. 
   
   
       4 . The piezoelectric oscillator according to  claim 1 , wherein the piezoelectric oscillator has a resonance frequency at 2 13  Hz (8.192 kHz) or higher, and 2 15  Hz (32.768 kHz) or lower.

Join the waitlist — get patent alerts

Track US2010194248A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.