Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

Abstract

A semiconductor substrate comprising a semiconductor base, a dielectric layer formed in at least a part of an area on the semiconductor base, and a single crystal semiconductor layers having mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth.

1 . A semiconductor substrate characterized in comprising:
 a semiconductor base;   a dielectric layer formed in at least a part of an area on the semiconductor base; and   single crystal semiconductor layers having mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth.   
   
   
       2 . A semiconductor substrate characterized in comprising:
 a semiconductor base;   a first dielectric layer formed in a first area on the semiconductor base;   a first single crystal semiconductor layer formed on the first dielectric layer;   a laminated layered structure of alternately laminated layers of different selection ratios at etching, formed in a second area on the semiconductor base;   a second dielectric layer formed on the laminated layered structure; and   a second single crystal semiconductor layer formed on the second dielectric layer.   
   
   
       3 . A semiconductor device characterized in comprising:
 a semiconductor substrate;   a dielectric layer formed in a part of an area on the semiconductor substrate;   a single crystal semiconductor layer disposed on the dielectric layer and formed by epitaxial growth; and   semiconductor elements of mutually different usages formed in the semiconductor substrate and the single crystal semiconductor layer.   
   
   
       4 . A semiconductor device characterized in comprising:
 a semiconductor substrate;   a dielectric layer formed in a part of an area on the semiconductor substrate;   single crystal semiconductor layers of mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth; and   semiconductor elements of mutually different usages formed in the single crystal semiconductor layers.   
   
   
       5 . A semiconductor device characterized in comprising:
 a semiconductor substrate;   a dielectric layer formed in a part of an area on the semiconductor substrate;   single crystal semiconductor layers of mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth; and   semiconductor elements of mutually different usages formed in the semiconductor substrate and the single crystal semiconductor layers of mutually different film thicknesses.   
   
   
       6 . A semiconductor device according to  claim 4  or  5 , characterized in further comprising element isolation regions for isolating the single crystal semiconductor layers in a horizontal direction, wherein the single crystal semiconductor layers of mutually different film thicknesses are disposed in a self-alignment manner between the element isolation regions. 
   
   
       7 . A semiconductor device according to  claim 5  or  6 , characterized in that a protection circuit or a trench memory cell is disposed in the semiconductor substrate, and among the single crystal semiconductor layers of mutually different film thicknesses, a completely depleted type field effect transistor is disposed in a single crystal semiconductor layer of a smaller film thickness, and a partially depleted type field effect transistor or bipolar transistor is disposed in a single crystal semiconductor layer of a greater film thickness. 
   
   
       8 . (canceled) 
   
   
       9 . (canceled) 
   
   
       10 . (canceled)