Inventor · disambiguated record
Raghuveer S. Makala
Also filed as: MAKALA RAGHUVEER · MAKALA RAGHUVEER S · MAKALA RAGHUVEER SATYA
238 granted patents·41 pending applications·4,620 citations·filing 2006–2025
99Inventor score
Files withSANDISK TECHNOLOGIES LLC180SANDISK TECHNOLOGIES INC55APPLIED MATERIALS INC16WESTERN DIGITAL TECH INC7SANDISK 3D LLC5
Top patents by PatentIndex Score
279 records- 0199US11482539B2Three-dimensional memory device including metal silicide source regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 25, 2022·11 cites·6 claims
- 0299US11322509B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·13 cites·19 claims
- 0399US11244953B2Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 8, 2022·10 cites·13 claims
- 0499US11177280B1Three-dimensional memory device including wrap around word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 16, 2021·13 cites·20 claims
- 0599US11127728B2Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 21, 2021·9 cites·20 claims
- 0699US10665581B1Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·86 cites·15 claims
- 0799US10290648B1Three-dimensional memory device containing air gap rails and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·71 cites·12 claims
- 0899US10283513B1Three-dimensional memory device with annular blocking dielectrics and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·82 cites·11 claims
- 0999US10256247B1Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 9, 2019·77 cites·10 claims
- 1099US10103169B1Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch processSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 16, 2018·70 cites·14 claims
- 1199US9824966B1Three-dimensional memory device containing a lateral source contact and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 21, 2017·129 cites·18 claims
- 1299US9627399B2Three-dimensional memory device with metal and silicide control gatesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·41 cites·25 claims
- 1399US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 1499US9230973B2Methods of fabricating a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·207 cites·28 claims
- 1599US9023719B2High aspect ratio memory hole channel contact formationSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 5, 2015·137 cites·36 claims
- 1699US8946023B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 3, 2015·96 cites·20 claims
- 1799US8878278B2Compact three dimensional vertical NAND and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 4, 2014·136 cites·24 claims
- 1898US11721727B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 8, 2023·6 cites·2 claims
- 1998US11631686B2Three-dimensional memory array including dual work function floating gates and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 18, 2023·6 cites·15 claims
- 2098US11296101B2Three-dimensional memory device including an inter-tier etch stop layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 5, 2022·9 cites·21 claims
- 2198US11239253B2Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
- 2298US11201139B2Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 14, 2021·7 cites·20 claims
- 2398US11171097B2Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 9, 2021·9 cites·18 claims
- 2498US11145628B1Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 12, 2021·6 cites·20 claims
- 2598US10910272B1Reusable support substrate for formation and transfer of semiconductor devices and methods of using the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 2, 2021·25 cites·19 claims
- 2698US10804291B1Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·22 cites·20 claims
- 2798US10707233B1Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 7, 2020·38 cites·20 claims
- 2898US10651196B1Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 12, 2020·33 cites·13 claims
- 2998US10438964B2Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 8, 2019·40 cites·7 claims
- 3098US10381559B1Three-dimensional phase change memory array including discrete middle electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·46 cites·22 claims
- 3198US10276583B2Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·51 cites·13 claims
- 3298US10199434B1Three-dimensional cross rail phase change memory device and method of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 5, 2019·23 cites·15 claims
- 3398US10115730B1Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·40 cites·18 claims
- 3498US10050054B2Three-dimensional memory device having drain select level isolation structure and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 14, 2018·26 cites·9 claims
- 3598US9972641B1Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 15, 2018·68 cites·30 claims
- 3698US9960180B1Three-dimensional memory device with partially discrete charge storage regions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 1, 2018·46 cites·12 claims
- 3798US9875929B1Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 23, 2018·146 cites·24 claims
- 3898US9842907B2Memory device containing cobalt silicide control gate electrodes and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·27 cites·9 claims
- 3998US9793139B2Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word linesSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 17, 2017·38 cites·26 claims
- 4098US9780182B2Molybdenum-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·32 cites·16 claims
- 4198US9698152B2Three-dimensional memory structure with multi-component contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·35 cites·13 claims
- 4298US9698223B2Memory device containing stress-tunable control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 4, 2017·26 cites·27 claims
- 4398US9698153B2Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing padSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jul 4, 2017·54 cites·11 claims
- 4498US9679906B2Three-dimensional memory devices containing memory block bridgesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 13, 2017·35 cites·18 claims
- 4598US9659955B1Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 23, 2017·46 cites·19 claims
- 4698US9646975B2Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 9, 2017·37 cites·17 claims
- 4798US9627395B2Enhanced channel mobility three-dimensional memory structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·33 cites·29 claims
- 4898US9570463B1Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 14, 2017·104 cites·18 claims
- 4998US9478558B2Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·43 cites·34 claims
- 5098US9397046B1Fluorine-free word lines for three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 19, 2016·63 cites·23 claims
Showing the top 50 of 279 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Raghuveer S. Makala files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →