Inventor · disambiguated record
Carlo Cremonesi
Also filed as: CREMONESI CARLO
16 granted patents·6 pending applications·137 citations·filing 1997–2010
93Inventor score
Top patents by PatentIndex Score
22 records- 0173US6221717B1EEPROM memory cell comprising a selection transistor with threshold voltage adjusted by implantation, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted Apr 24, 2001·31 cites·9 claims
- 0266US6432762B1Memory cell for EEPROM devices, and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Aug 13, 2002·9 cites·21 claims
- 0366US6268247B1Memory cell of the EEPROM type having its threshold set by implantation, and fabrication methodST MICROELECTRONICS SRL·Filed 1999·Granted Jul 31, 2001·26 cites·20 claims
- 0464US7910444B2Process for forming differential spaces in electronics device integrated on a semiconductor substrateST MICROELECTRONICS SRL·Filed 2009·Granted Mar 22, 2011·2 cites·21 claims
- 0555US6274411B1Method for manufacturing electronic devices, comprising non-salicided non-volatile memory cells, non-salicided HV transistors, and LV transistors with salicided junctions with few masksST MICROELECTRONICS SRL·Filed 1999·Granted Aug 14, 2001·14 cites·19 claims
- 0655US6194270B1Process for the manufacturing of an electrically programmable non-volatile memory deviceST MICROELECTRONICS SRL·Filed 1998·Granted Feb 27, 2001·12 cites·15 claims
- 0749US5985718AProcess for fabricating memory cells with two levels of polysilicon for devices of EEPROM typeSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 16, 1999·12 cites·5 claims
- 0847US2008206945A1Process for forming differential spaces in electronics device integrated on a semiconductor substrateST MICROELECTRONICS SRL·Filed 2007·Application pending·0 cites
- 0946US6255163B1Process for manufacturing selection transistors for nonvolatile serial-flash, EPROM, EEPROM and flash-EEPROM memories in standard or AMG configurationST MICROELECTRONICS SRL·Filed 1999·Granted Jul 3, 2001·8 cites·18 claims
- 1046US2007111447A1Process for manufacturing a floating gate non-volatile memory cell, and memory cell thus obtainedST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
- 1145US6320219B1Memory cell for EEPROM devices and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Nov 20, 2001·2 cites·5 claims
- 1243US2010279486A1Nonvolatile memory having conductive film between adjacent memory cellsCREMONESI CARLO·Filed 2010·Application pending·0 cites
- 1342US6437395B2Process for the manufacturing of an electrically programmable non-volatile memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted Aug 20, 2002·1 cites·11 claims
- 1441US6180460B1Process for manufacturing of a non volatile memory with reduced resistance of the common source linesST MICROELECTRONICS SRL·Filed 1999·Granted Jan 30, 2001·6 cites·7 claims
- 1539US7419876B2Method for manufacturing non-volatile memory devices integrated in a semiconductor substrateST MICROELECTRONICS SRL·Filed 2005·Granted Sep 2, 2008·0 cites·17 claims
- 1639US2002130320A1Method for evaluating an integrated electronic deviceFiled 2001·Application pending·0 cites
- 1739US2002020872A1Memory cell of the EEPROM type having its threshold adjusted by implantationST MICROELECTRONICS SRL·Filed 2001·Application pending·0 cites
- 1839US2003189204A1Structure and method for evaluating an integrated electronic deviceFiled 2001·Application pending·0 cites
- 1938US6329254B1Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication methodST MICROELECTRONICS SRL·Filed 1999·Granted Dec 11, 2001·6 cites·17 claims
- 2038US6313480B1Structure and method for evaluating an integrated electronic deviceST MICROELECTRONICS SRL·Filed 1998·Granted Nov 6, 2001·5 cites·8 claims
- 2133US6097057AMemory cell for EEPROM devices, and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Aug 1, 2000·2 cites·13 claims
- 2231US6080626AMemory cell for EEPROM devices, and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Jun 27, 2000·1 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →