Inventor · disambiguated record
Sonarith Chhun
Also filed as: CHHUN SONARITH
9 granted patents·4 pending applications·34 citations·filing 2006–2020
83Inventor score
Top patents by PatentIndex Score
13 records- 0194US10910428B2Electronic device image sensorST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Feb 2, 2021·5 cites·18 claims
- 0290US10892291B2Bonding pad architecture using capacitive deep trench isolation (CDTI) structures for electrical connectionST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Jan 12, 2021·21 cites·16 claims
- 0370US11978756B2Electronic device image sensorST MICROELECTRONICS CROLLES 2 SAS·Filed 2020·Granted May 7, 2024·0 cites·18 claims
- 0469US11682689B2Electronic device image sensorST MICROELECTRONICS CROLLES 2 SAS·Filed 2020·Granted Jun 20, 2023·0 cites·11 claims
- 0565US7630191B2MIM capacitorST MICROELECTRONICS CROLLES 2·Filed 2007·Granted Dec 8, 2009·3 cites·15 claims
- 0663US8143157B2Fabrication of a diffusion barrier cap on copper containing conductive elementsTORRES JOAQUIN·Filed 2007·Granted Mar 27, 2012·3 cites·11 claims
- 0759US8424177B2MIM capacitor with enhanced capacitanceFARCY ALEXIS·Filed 2010·Granted Apr 23, 2013·2 cites·10 claims
- 0845US2010059889A1Adhesion of diffusion barrier on copper-containing interconnect elementNXP BV·Filed 2007·Application pending·0 cites
- 0944US7989342B2Formation of a reliable diffusion-barrier cap on a Cu-containing interconnect element having grains with different crystal orientationsTORRES JOAQUIN·Filed 2008·Granted Aug 2, 2011·0 cites·8 claims
- 1044US2013286540A1Mim capacitorNXP B V DUTCH CORP·Filed 2013·Application pending·0 cites
- 1144US2019088695A1Bonding pad architecture using capacitive deep trench isolation (cdti) structures for electrical connectionST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Application pending·0 cites
- 1241US2009197405A1Method of forming a layer over a surface of a first material embedded in a second material in a structure for a semiconductor deviceNXP BV·Filed 2006·Application pending·0 cites
- 1334US9876032B2Method of manufacturing a device with MOS transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Jan 23, 2018·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →