Inventor · disambiguated record
Masatoshi Tagaki
Also filed as: TAGAKI MASATOSHI
16 granted patents·3 pending applications·60 citations·filing 2006–2018
92Inventor score
Top patents by PatentIndex Score
19 records- 0193US8742601B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2013·Granted Jun 3, 2014·10 cites·4 claims
- 0292US9331039B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2015·Granted May 3, 2016·6 cites·18 claims
- 0391US9515043B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2016·Granted Dec 6, 2016·5 cites·19 claims
- 0491US9093334B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2014·Granted Jul 28, 2015·7 cites·16 claims
- 0591US8952554B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2014·Granted Feb 10, 2015·8 cites·9 claims
- 0687US9842821B2Semiconductor device including semiconductor chip, wiring, conductive material, and contact partSEIKO EPSON CORP·Filed 2016·Granted Dec 12, 2017·3 cites·29 claims
- 0787US8614513B2Semiconductor device including a buffer layer structure for reducing stressYUZAWA TAKESHI·Filed 2007·Granted Dec 24, 2013·11 cites·9 claims
- 0878US10103120B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2017·Granted Oct 16, 2018·1 cites·9 claims
- 0967US10658325B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2018·Granted May 19, 2020·0 cites·2 claims
- 1067US7649260B2Semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted Jan 19, 2010·4 cites·29 claims
- 1165US7663180B2Semiconductor deviceSEIKO EPSON CORP·Filed 2007·Granted Feb 16, 2010·3 cites·7 claims
- 1260US7598569B2Semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted Oct 6, 2009·2 cites·4 claims
- 1354US2014361433A1Semiconductor deviceSEIKO EPSON CORP·Filed 2014·Application pending·0 cites
- 1450US7777334B2Semiconductor device having active element formation region provided under a bump padSEIKO EPSON CORP·Filed 2008·Granted Aug 17, 2010·0 cites·5 claims
- 1549US8878365B2Semiconductor device having a conductive layer reliably formed under an electrode padYUZAWA TAKESHI·Filed 2011·Granted Nov 4, 2014·0 cites·6 claims
- 1648US2007013065A1Semiconductor deviceSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 1747US7936064B2Semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted May 3, 2011·0 cites·9 claims
- 1846US2007007662A1Semiconductor deviceSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 1944US8441125B2Semiconductor deviceYUZAWA TAKESHI·Filed 2011·Granted May 14, 2013·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →