Semiconductor device

Abstract

A semiconductor device, including: a semiconductor layer; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width; an interlayer dielectric formed above the first conductive layer and the second conductive layer; and an electrode pad formed above the interlayer dielectric. A connection section at which the first conductive layer and the second conductive layer are connected is disposed in a specific region positioned inward from a line extending vertically downward from an edge of the electrode pad; and a reinforcing section is provided at the connection section.

1 . A semiconductor device, comprising: 
 a semiconductor layer;    a first conductive layer formed above the semiconductor layer and having a first width;    a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width;    an interlayer dielectric formed above the first conductive layer and the second conductive layer; and    an electrode pad formed above the interlayer dielectric,    a connection section at which the first conductive layer and the second conductive layer are connected being disposed in a specific region positioned inward from a line extending vertically downward from an edge of the electrode pad; and    a reinforcing section being provided at the connection section.    
   
   
       2 . The semiconductor device as defined in  claim 1 , 
 wherein the first conductive layer and the second conductive layer are connected in a shape of the letter “T” or “L”.    
   
   
       3 . The semiconductor device as defined in  claim 1 , 
 wherein the reinforcing section is formed by a third conductive layer protruding from the first conductive layer and the second conductive layer.    
   
   
       4 . The semiconductor device as defined in  claim 3 , 
 wherein the first conductive layer, the second conductive layer, and the third conductive layer are polysilicon layers.    
   
   
       5 . A semiconductor device, comprising: 
 a semiconductor layer;    a first conductive layer formed above the semiconductor layer and having a first width;    a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width;    an interlayer dielectric formed above the first conductive layer and the second conductive layer; and    an electrode pad formed above the interlayer dielectric,    a connection section at which the first conductive layer and the second conductive layer are connected being disposed in a specific region positioned outward from a line extending vertically downward from an edge of at least part of the electrode pad; and    a reinforcing section being provided at the connection section.    
   
   
       6 . The semiconductor device as defined in  claim 5 , 
 wherein the electrode pad has a rectangular shape having a short side and a long side; and    wherein the reinforcing section is provided at the connection section provided in a specific region positioned outward from a line extending vertically downward from an edge of the short side of the electrode pad.    
   
   
       7 . The semiconductor device as defined in  claim 5 , comprising: 
 a passivation layer formed above the electrode pad and having an opening which exposes at least part of the electrode pad,    wherein the specific region is a region having a width corresponding to a thickness of the passivation layer outward from a line extending vertically downward from the edge.    
   
   
       8 . The semiconductor device as defined in  claim 5 , comprising: 
 a passivation layer formed above the electrode pad and having an opening which exposes at least part of the electrode pad,    wherein the specific region is a region having a width of 1.0 to 2.5 micrometers outward from a line extending vertically downward from the edge.    
   
   
       9 . The semiconductor device as defined in  claim 7 , comprising a bump formed in the opening.  
   
   
       10 . The semiconductor device as defined in  claim 5 , 
 wherein the first conductive layer and the second conductive layer are connected in a shape of the letter “T” or “L”.    
   
   
       11 . The semiconductor device as defined in  claim 5 , 
 wherein the reinforcing section is formed by a third conductive layer protruding from the first conductive layer and the second conductive layer.    
   
   
       12 . The semiconductor device as defined in  claim 11 , 
 wherein the first conductive layer, the second conductive layer, and the third conductive layer are polysilicon layers.    
   
   
       13 . A semiconductor device, comprising: 
 a semiconductor layer;    a first conductive layer formed above the semiconductor layer and having a first width;    a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width;    an interlayer dielectric formed above the first conductive layer and the second conductive layer;    an electrode pad formed above the interlayer dielectric,    a passivation layer formed above the electrode pad and having an opening which exposes at least part of the electrode pad; and    a bump formed in the opening,    a connection section at which the first conductive layer and the second conductive layer are connected being disposed in a specific region positioned inward from a line extending vertically downward from an edge of the bump; and    a reinforcing section being provided at the connection section.    
   
   
       14 . The semiconductor device as defined in  claim 13 , 
 wherein the first conductive layer and the second conductive layer are connected in a shape of the letter “T” or “L”.    
   
   
       15 . The semiconductor device as defined in  claim 13 , 
 wherein the reinforcing section is formed by a third conductive layer protruding from the first conductive layer and the second conductive layer.    
   
   
       16 . The semiconductor device as defined in  claim 15 , 
 wherein the first conductive layer, the second conductive layer, and the third conductive layer are polysilicon layers.    
   
   
       17 . A semiconductor device, comprising: 
 a semiconductor layer;    a first conductive layer formed above the semiconductor layer and having a first width;    a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width;    an interlayer dielectric formed above the first conductive layer and the second conductive layer;    an electrode pad formed above the interlayer dielectric,    a passivation layer formed above the electrode pad and having an opening which exposes at least part of the electrode pad; and    a bump formed in the opening,    a connection section at which the first conductive layer and the second conductive layer are connected being disposed in a specific region positioned inward and outward from a line extending vertically downward from an edge of at least part of the bump; and    a reinforcing section being provided at the connection section.    
   
   
       18 . The semiconductor device as defined in  claim 17 , 
 wherein the bump has a rectangular shape having a short side and a long side; and    wherein the reinforcing section is provided at the connection section provided in a specific region positioned inward and outward from a line extending vertically downward from an edge of the short side of the bump.    
   
   
       19 . The semiconductor device as defined in  claim 17 , 
 wherein the specific region is a region having a width of 2.0 to 3.0 micrometers outward from a line extending vertically downward from the edge and having a width of 2.0 to 3.0 micrometers inward from a line extending vertically downward from the edge.    
   
   
       20 . The semiconductor device as defined in  claim 17 , 
 wherein the first conductive layer and the second conductive layer are connected in a shape of the letter “T” or “L”.    
   
   
       21 . The semiconductor device as defined in  claim 17 , 
 wherein the reinforcing section is formed by a third conductive layer protruding from the first conductive layer and the second conductive layer.    
   
   
       22 . The semiconductor device as defined in  claim 21 , 
 wherein the first conductive layer, the second conductive layer, and the third conductive layer are polysilicon layers.