Semiconductor device

Abstract

A semiconductor device, including: a semiconductor layer; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width; an interlayer dielectric formed above the first conductive layer and the second conductive layer; and an electrode pad formed above the interlayer dielectric. A connection section at which the first conductive layer and the second conductive layer are connected is disposed in a specific region positioned inward from a line extending vertically downward from an edge of the electrode pad; and a reinforcing section is provided at the connection section.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor layer;   a first conductive layer formed above the semiconductor layer and having a first width;   a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width;   an interlayer dielectric formed above the first conductive layer and the second conductive layer;   an electrode pad formed above the interlayer dielectric,   a passivation layer formed above the electrode pad and having an opening which exposes at least part of the electrode pad; and   a bump formed in the opening,   a connection section at which the first conductive layer and the second conductive layer are connected being disposed in a specific region positioned inward and outward from a line extending vertically downward from an edge of at least part of the bump; and   a reinforcing section being provided at the connection section.   
     
     
         2 . The semiconductor device as defined in  claim 1 ,
 wherein the bump has a rectangular shape having a short side and a long side; and   wherein the reinforcing section is provided at the connection section provided in a specific region positioned inward and outward from a line extending vertically downward from an edge of the short side of the bump.   
     
     
         3 . The semiconductor device as defined in  claim 1 ,
 wherein the specific region is a region having a width of 2.0 to 3.0 micrometers outward from a line extending vertically downward from the edge and having a width of 2.0 to 3.0 micrometers inward from a line extending vertically downward from the edge.   
     
     
         4 . The semiconductor device as defined in  claim 1 ,
 wherein the first conductive layer and the second conductive layer are connected in a shape of the letter “T” or “L”.   
     
     
         5 . The semiconductor device as defined in  claim 1 ,
 wherein the reinforcing section is formed by a third conductive layer protruding from the first conductive layer and the second conductive layer.   
     
     
         6 . The semiconductor device as defined in  claim 5 ,
 wherein the first conductive layer, the second conductive layer, and the third conductive layer are polysilicon layers.