Inventor · disambiguated record
Frank Hawley
Also filed as: HAWLEY FRANK · HAWLEY FRANK W
40 granted patents·7 pending applications·1,606 citations·filing 1992–2019
98Inventor score
Top patents by PatentIndex Score
47 records- 0198US7459763B1Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse materialACTEL CORP·Filed 2004·Granted Dec 2, 2008·267 cites·33 claims
- 0298US7393722B1Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse materialACTEL CORP·Filed 2005·Granted Jul 1, 2008·269 cites·5 claims
- 0397US8415650B2Front to back resistive random access memory cellsGREENE JONATHAN·Filed 2010·Granted Apr 9, 2013·56 cites·12 claims
- 0497US8269203B2Resistive RAM devices for programmable logic devicesGREENE JONATHAN·Filed 2010·Granted Sep 18, 2012·28 cites·16 claims
- 0596US7368789B1Non-volatile programmable memory cell and array for programmable logic arrayACTEL CORP·Filed 2005·Granted May 6, 2008·59 cites·18 claims
- 0696US7245535B2Non-volatile programmable memory cell for programmable logic arrayACTEL CORP·Filed 2005·Granted Jul 17, 2007·49 cites·37 claims
- 0794US9147836B2Layouts for resistive RAM cellsMICROSEMI SOC CORP·Filed 2015·Granted Sep 29, 2015·13 cites·8 claims
- 0892US7839681B2Push-pull FPGA cellACTEL CORP·Filed 2008·Granted Nov 23, 2010·25 cites·6 claims
- 0992US7390726B1Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layerACTEL CORP·Filed 2005·Granted Jun 24, 2008·29 cites·27 claims
- 1092US5614756AMetal-to-metal antifuse with conductiveACTEL CORP·Filed 1994·Granted Mar 25, 1997·119 cites·23 claims
- 1191US8981328B2Back to back resistive random access memory cellsMICROSEMI SOC CORP·Filed 2014·Granted Mar 17, 2015·5 cites·7 claims
- 1291US8269204B2Back to back resistive random access memory cellsGREENE JONATHAN·Filed 2010·Granted Sep 18, 2012·18 cites·17 claims
- 1389US9991894B2Resistive random access memory cellsMICROSEMI SOC CORP·Filed 2015·Granted Jun 5, 2018·4 cites·12 claims
- 1489US5308795AAbove via metal-to-metal antifuseACTEL CORP·Filed 1992·Granted May 3, 1994·114 cites·18 claims
- 1588US6437365B1Raised tungsten plug antifuse and fabrication processesACTEL CORP·Filed 2000·Granted Aug 20, 2002·38 cites·10 claims
- 1684US10256822B2Front to back resistive random access memory cellsMICROSEMI SOC CORP·Filed 2018·Granted Apr 9, 2019·2 cites·23 claims
- 1784US8723151B2Front to back resistive random access memory cellsMICROSEMI SOC CORP·Filed 2013·Granted May 13, 2014·3 cites·6 claims
- 1881US7358589B1Amorphous carbon metal-to-metal antifuse with adhesion promoting layersACTEL CORP·Filed 2005·Granted Apr 15, 2008·9 cites·22 claims
- 1980US10855286B2Front to back resistive random-access memory cellsMICROSEMI SOC CORP·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 2080US5763898AAbove via metal-to-metal antifuses incorporating a tungsten via plugACTEL CORP·Filed 1996·Granted Jun 9, 1998·52 cites·8 claims
- 2179US5780323AFabrication method for metal-to-metal antifuses incorporating a tungsten via plugACTEL CORP·Filed 1996·Granted Jul 14, 1998·56 cites·16 claims
- 2278US7590000B2Non-volatile programmable memory cell for programmable logic arrayACTEL CORP·Filed 2007·Granted Sep 15, 2009·9 cites·37 claims
- 2377US8633548B2Non-volatile programmable memory cell and array for programmable logic arrayDHAOUI FETHI·Filed 2010·Granted Jan 21, 2014·4 cites·14 claims
- 2477US6728126B1Programming methods for an amorphous carbon metal-to-metal antifuseACTEL CORP·Filed 2002·Granted Apr 27, 2004·24 cites·9 claims
- 2577US5464790AMethod of fabricating an antifuse element having an etch-stop dielectric layerACTEL CORP·Filed 1994·Granted Nov 7, 1995·55 cites·10 claims
- 2674US5962910AMetal-to-metal via-type antifuseACTEL CORP·Filed 1997·Granted Oct 5, 1999·39 cites·18 claims
- 2774US5763299AReduced leakage antifuse fabrication methodACTEL CORP·Filed 1996·Granted Jun 9, 1998·39 cites·4 claims
- 2871US7838944B2Non-volatile programmable memory cell and array for programmable logic arrayACTEL CORP·Filed 2008·Granted Nov 23, 2010·3 cites·17 claims
- 2970US6965156B1Amorphous carbon metal-to-metal antifuse with adhesion promoting layersUNIV TEXAS TECH SYSTEM·Filed 2002·Granted Nov 15, 2005·14 cites·34 claims
- 3069US5381035AMetal-to-metal antifuse including etch stop layerFiled 1993·Granted Jan 10, 1995·35 cites·20 claims
- 3168US6767769B2Metal-to-metal antifuse employing carbon-containing antifuse materialACTEL CORP·Filed 2003·Granted Jul 27, 2004·13 cites·17 claims
- 3267US5576576AAbove via metal-to-metal antifuseACTEL CORP·Filed 1995·Granted Nov 19, 1996·31 cites·26 claims
- 3364US6124193ARaised tungsten plug antifuse and fabrication processesACTEL CORP·Filed 1998·Granted Sep 26, 2000·21 cites·12 claims
- 3462US6492206B2Antifuse with improved radiation SEDRACTEL CORP·Filed 2000·Granted Dec 10, 2002·15 cites·3 claims
- 3562US5741720AMethod of programming an improved metal-to-metal via-type antifuseACTEL CORP·Filed 1995·Granted Apr 21, 1998·24 cites·12 claims
- 3656US5986322AReduced leakage antifuse structureFiled 1995·Granted Nov 16, 1999·18 cites·10 claims
- 3754US5804500AFabrication process for raised tungsten plug antifuseACTEL CORP·Filed 1996·Granted Sep 8, 1998·14 cites·12 claims
- 3854US5525830AMetal-to-metal antifuse including etch stop layerACTEL CORP·Filed 1994·Granted Jun 11, 1996·18 cites·10 claims
- 3953US5920109ARaised tungsten plug antifuse and fabrication processesACTEL CORP·Filed 1996·Granted Jul 6, 1999·13 cites·12 claims
- 4053US2009057821A1Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse materialACTEL CORP·Filed 2008·Application pending·0 cites
- 4150US2008197450A1Amorphous carbon metal-to-metal antifuse with adhesion promoting layersACTEL CORP·Filed 2008·Application pending·0 cites
- 4248US9754948B2Non-volatile programmable memory cell and array for programmable logic arrayMICROSEMI SOC CORP·Filed 2014·Granted Sep 5, 2017·0 cites·20 claims
- 4340US2011024821A1Push-pull fpga cellACTEL CORP·Filed 2010·Application pending·0 cites
- 4438US2005090047A1Method of making a MOS transistor having improved total radiation-induced leakage currentACTEL CORP A CALIFORNIA CORP·Filed 2004·Application pending·0 cites
- 4538US2005090073A1MOS transistor having improved total radiation-induced leakage currentACTEL CORP A CALIFORNIA CORP·Filed 2004·Application pending·0 cites
- 4637US2003062596A1Metal-to-metal antifuse employing carbon-containing antifuse materialACTEL CORP·Filed 2001·Application pending·0 cites
- 4734US2017179382A1Low leakage resistive random access memory cells and processes for fabricating sameMICROSEMI SOC CORP·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →