Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material

Abstract

A reprogrammable metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. A lower barrier layer is formed from Ti. A lower adhesion-promoting layer is disposed over the lower Ti barrier layer. An antifuse material layer selected from a group comprising at least one of amorphous carbon and amorphous carbon doped with at least one of hydrogen and fluorine is disposed over the lower adhesion-promoting layer. An upper adhesion-promoting layer is disposed over the antifuse material layer. An upper Ti barrier layer is disposed over the upper adhesion-promoting layer.

1 . A reprogrammable metal-to-metal antifuse comprising:
 a lower Ti barrier layer;   a lower adhesion-promoting layer disposed over said lower Ti barrier layer;   an antifuse material layer disposed above an upper surface of said lower adhesion-promoting layer lower Ti barrier layer, said antifuse material layer selected from a group comprising at least one of amorphous carbon and amorphous carbon doped with at least one of hydrogen and fluorine disposed over said lower adhesion-promoting layer;   an upper adhesion-promoting layer disposed over said antifuse material layer; and   an upper Ti barrier layer disposed over said upper adhesion-promoting layer.