Inventor · disambiguated record
Kevin K. Chan
Also filed as: CHAN KEVIN · CHAN KEVIN K · CHAN KEVIN KOK · CHAN KEVIN KOK FUN
226 granted patents·28 pending applications·4,231 citations·filing 1987–2019
99Inventor score
Top patents by PatentIndex Score
254 records- 0199US6891227B2Self-aligned nanotube field effect transistor and method of fabricating sameIBM·Filed 2002·Granted May 10, 2005·178 cites·9 claims
- 0298US9673307B1Lateral bipolar junction transistor with abrupt junction and compound buried oxideIBM·Filed 2016·Granted Jun 6, 2017·25 cites·20 claims
- 0398US8288758B2SOI SiGe-base lateral bipolar junction transistorNING TAK H·Filed 2010·Granted Oct 16, 2012·59 cites·13 claims
- 0498US7595010B2Method for producing a doped nitride film, doped oxide film and other doped filmsIBM·Filed 2007·Granted Sep 29, 2009·57 cites·1 claims
- 0598US7361611B2Doped nitride film, doped oxide film and other doped filmsIBM·Filed 2006·Granted Apr 22, 2008·55 cites·14 claims
- 0698US6057212AMethod for making bonded metal back-plane substratesIBM·Filed 1998·Granted May 2, 2000·388 cites·26 claims
- 0797US9318585B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Apr 19, 2016·30 cites·6 claims
- 0897US8586441B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Nov 19, 2013·32 cites·20 claims
- 0997US8420493B2SOI SiGe-base lateral bipolar junction transistorNING TAK H·Filed 2012·Granted Apr 16, 2013·40 cites·20 claims
- 1097US8043920B2finFETS and methods of making sameIBM·Filed 2009·Granted Oct 25, 2011·91 cites·12 claims
- 1197US6660598B2Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel regionIBM·Filed 2002·Granted Dec 9, 2003·137 cites·10 claims
- 1297US6444592B1Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2000·Granted Sep 3, 2002·191 cites·22 claims
- 1396US9799756B1Germanium lateral bipolar transistor with silicon passivationIBM·Filed 2016·Granted Oct 24, 2017·11 cites·10 claims
- 1496US9490332B1Atomic layer doping and spacer engineering for reduced external resistance in finFETsIBM·Filed 2015·Granted Nov 8, 2016·17 cites·20 claims
- 1596US9437718B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Sep 6, 2016·16 cites·14 claims
- 1696US8558282B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Oct 15, 2013·26 cites·20 claims
- 1796US8441084B2Horizontal polysilicon-germanium heterojunction bipolar transistorCAI JIN·Filed 2011·Granted May 14, 2013·30 cites·20 claims
- 1896US7087965B2Strained silicon CMOS on hybrid crystal orientationsIBM·Filed 2004·Granted Aug 8, 2006·97 cites·13 claims
- 1996US7071103B2Chemical treatment to retard diffusion in a semiconductor overlayerIBM·Filed 2004·Granted Jul 4, 2006·120 cites·25 claims
- 2096US6096590AScalable MOS field effect transistorIBM·Filed 1998·Granted Aug 1, 2000·184 cites·37 claims
- 2195US9679967B1Contact resistance reduction by III-V Ga deficient surfaceIBM·Filed 2016·Granted Jun 13, 2017·10 cites·19 claims
- 2295US9406529B1Formation of FinFET junctionIBM·Filed 2015·Granted Aug 2, 2016·10 cites·20 claims
- 2395US8637374B2Method of fabricating self-aligned nanotube field effect transistorAPPENZELLER JOERG·Filed 2012·Granted Jan 28, 2014·15 cites·4 claims
- 2495US8575699B2Thin box metal backgate extremely thin SOI deviceIBM·Filed 2013·Granted Nov 5, 2013·17 cites·13 claims
- 2595US8557670B1SOI lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Granted Oct 15, 2013·22 cites·20 claims
- 2695US7989298B1Transistor having V-shaped embedded stressorIBM·Filed 2010·Granted Aug 2, 2011·27 cites·20 claims
- 2795US7872303B2FinFET with longitudinal stress in a channelIBM·Filed 2008·Granted Jan 18, 2011·31 cites·14 claims
- 2895US6365465B1Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniquesIBM·Filed 1999·Granted Apr 2, 2002·169 cites·15 claims
- 2994US10050039B2Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2017·Granted Aug 14, 2018·7 cites·18 claims
- 3094US9852938B1Passivated germanium-on-insulator lateral bipolar transistorsIBM·Filed 2016·Granted Dec 26, 2017·9 cites·19 claims
- 3194US9576096B2Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufactureIBM·Filed 2014·Granted Feb 21, 2017·12 cites·17 claims
- 3294US9502504B2SOI lateral bipolar transistors having surrounding extrinsic base portionsIBM·Filed 2013·Granted Nov 22, 2016·20 cites·20 claims
- 3394US8492234B2Field effect transistor deviceCHAN KEVIN K·Filed 2010·Granted Jul 23, 2013·16 cites·12 claims
- 3494US7955928B2Structure and method of fabricating FinFETIBM·Filed 2009·Granted Jun 7, 2011·32 cites·29 claims
- 3594US6841831B2Fully-depleted SOI MOSFETs with low source and drain resistance and minimal overlap capacitance using a recessed channel damascene gate processIBM·Filed 2003·Granted Jan 11, 2005·74 cites·10 claims
- 3694US6580132B1Damascene double-gate FETIBM·Filed 2002·Granted Jun 17, 2003·76 cites·10 claims
- 3794US6503833B1Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed therebyIBM·Filed 2000·Granted Jan 7, 2003·83 cites·35 claims
- 3893US10269806B2Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2018·Granted Apr 23, 2019·5 cites·12 claims
- 3993US8138491B2Self-aligned nanotube field effect transistorAPPENZELLER JOERG·Filed 2009·Granted Mar 20, 2012·18 cites·3 claims
- 4093US6645861B2Self-aligned silicide process for silicon sidewall source and drain contactsIBM·Filed 2001·Granted Nov 11, 2003·71 cites·35 claims
- 4192US10042968B2Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2016·Granted Aug 7, 2018·5 cites·15 claims
- 4292US8815684B2Bulk finFET with super steep retrograde wellIBM·Filed 2012·Granted Aug 26, 2014·12 cites·25 claims
- 4392US8551845B2Structure and method for increasing strain in a deviceCHAN KEVIN K·Filed 2010·Granted Oct 8, 2013·12 cites·15 claims
- 4492US7119416B1Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2005·Granted Oct 10, 2006·21 cites·6 claims
- 4592US6555880B2Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed therebyIBM·Filed 2001·Granted Apr 29, 2003·54 cites·9 claims
- 4691US10396154B2Lateral bipolar junction transistor with abrupt junction and compound buried oxideIBM·Filed 2017·Granted Aug 27, 2019·4 cites·16 claims
- 4791US9306038B1Shallow extension junctionIBM·Filed 2014·Granted Apr 5, 2016·10 cites·12 claims
- 4891US9034748B2Process variability tolerant hard mask for replacement metal gate finFET devicesIBM·Filed 2013·Granted May 19, 2015·13 cites·10 claims
- 4990US9773865B2Self-forming spacers using oxidationIBM·Filed 2014·Granted Sep 26, 2017·6 cites·19 claims
- 5090US7635856B2Vertical nanotube field effect transistorIBM·Filed 2007·Granted Dec 22, 2009·11 cites·9 claims
Showing the top 50 of 254 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →