Inventor · disambiguated record
Jo-Won Lee
Also filed as: LEE JO-WON
25 granted patents·9 pending applications·771 citations·filing 1995–2020
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD24CHEIL IND INC3SAMSUNG SDI CO LTD2LOTTE ADVANCED MAT CO LTD1PARK WAN-JUN1
Top patents by PatentIndex Score
34 records- 0199US6566704B2Vertical nano-size transistor using carbon nanotubes and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 20, 2003·255 cites·3 claims
- 0294US6855603B2Vertical nano-size transistor using carbon nanotubes and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·68 cites·3 claims
- 0393US7345898B2Complementary nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·22 cites·25 claims
- 0492US6946703B2SONOS memory device having side gate stacks and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 20, 2005·83 cites·24 claims
- 0591US6833567B2Vertical nano-size transistor using carbon nanotubes and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 21, 2004·42 cites·3 claims
- 0689US9790364B2Thermoplastic resin composition and article comprising the sameSAMSUNG SDI CO LTD·Filed 2016·Granted Oct 17, 2017·2 cites·13 claims
- 0789US6597036B1Multi-value single electron memory using double-quantum dot and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 22, 2003·57 cites·20 claims
- 0888US6815294B2Vertical nano-size transistor using carbon nanotubes and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·32 cites·3 claims
- 0983US10370535B2Flame retardant resin composition and molded article using the sameLOTTE ADVANCED MAT CO LTD·Filed 2017·Granted Aug 6, 2019·2 cites·19 claims
- 1080US6930343B2Nonvolatile memory device utilizing a vertical nanotubeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 16, 2005·28 cites·14 claims
- 1179US7187030B2SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 6, 2007·21 cites·16 claims
- 1276US7374991B2SONOS memory device having side gate stacks and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 20, 2008·6 cites·19 claims
- 1375US7020064B2Rewritable data storage using carbonaceous material and writing/reading method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 28, 2006·17 cites·16 claims
- 1475US6313503B1MNOS-type memory using single electron transistor and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 6, 2001·28 cites·30 claims
- 1575US6268273B1Fabrication method of single electron tunneling deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 31, 2001·24 cites·4 claims
- 1674US8139387B2Method of erasing a memory device including complementary nonvolatile memory devicesPARK YOON-DONG·Filed 2010·Granted Mar 20, 2012·3 cites·10 claims
- 1774US7432554B2CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·5 cites·26 claims
- 1874US7202521B2Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 10, 2007·19 cites·31 claims
- 1970US6479365B2Single electron transistor using porous silicon and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 12, 2002·13 cites·10 claims
- 2068US6180202B1Large capacity disk and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 30, 2001·19 cites·16 claims
- 2165US6414333B1Single electron transistor using porous siliconSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 2, 2002·9 cites·7 claims
- 2262US5815910AMethod for manufacturing a magnetic headSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Oct 6, 1998·15 cites·56 claims
- 2360US7719871B2Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 18, 2010·1 cites·10 claims
- 2451US7759196B2Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 20, 2010·0 cites·12 claims
- 2550US2022245437A1Three-dimensional neuromorphic device having multiple synapses per neuronUNIV HANYANG IND UNIV COOP FOUND·Filed 2020·Application pending·0 cites
- 2648US2015094414A1Thermoplastic Resin Composition and Molded Article Including the SameSAMSUNG SDI CO LTD·Filed 2014·Application pending·0 cites
- 2747US2007138541A1Method of erasing data from SONOS memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2846US2014187688A1(Meth)Acrylic Copolymer, Method for Preparing the Same and Thermoplastic Resin Composition Comprising the SameCHEIL IND INC·Filed 2013·Application pending·0 cites
- 2944US8237214B2Non-volatile memory device including metal-insulator transition materialPARK WAN-JUN·Filed 2007·Granted Aug 7, 2012·0 cites·8 claims
- 3044US2014184035A1Television Housing and Method of Fabricating the SameCHEIL IND INC·Filed 2013·Application pending·0 cites
- 3144US2006108629A1Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3240US2013169121A1Television Housing and Method for Manufacturing the SameCHEIL IND INC·Filed 2012·Application pending·0 cites
- 3338US2005173766A1Semiconductor memory and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3435US2017316949A1Method of etching atomic layerUNIV SUNGKYUNKWAN RES & BUS·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →