Inventor · disambiguated record
Jong-Heui Song
Also filed as: SONG JONG-HEUI
13 granted patents·4 pending applications·199 citations·filing 1999–2010
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD16
Top patents by PatentIndex Score
17 records- 0190US6239022B1Method of fabricating a contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 29, 2001·53 cites·21 claims
- 0288US7745290B2Methods of fabricating semiconductor device including fin-fetSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·15 cites·12 claims
- 0380US8372198B2Methods of forming dual damascene structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 12, 2013·10 cites·14 claims
- 0475US7667221B2Phase change memory devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 23, 2010·11 cites·20 claims
- 0574US7157770B2MOS transistor with recessed gate and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 2, 2007·12 cites·9 claims
- 0672US7358126B2Dual damascene structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 15, 2008·3 cites·21 claims
- 0771US7531414B2Method of manufacturing integrated circuit device including recessed channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·4 cites·13 claims
- 0869US6124216AMethod of making intermetal dielectric layers having a low dielectric constantSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Sep 26, 2000·43 cites·22 claims
- 0966US6808975B2Method for forming a self-aligned contact hole in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 26, 2004·14 cites·29 claims
- 1065US8003487B2Methods of manufacturing a semiconductor device using a layer suspended across a trenchSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 23, 2011·4 cites·13 claims
- 1164US7326619B2Method of manufacturing integrated circuit device including recessed channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 5, 2008·10 cites·20 claims
- 1252US6074519APlasma etching apparatus having a sealing member coupling an upper electrode to an etching chamberSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 13, 2000·20 cites·18 claims
- 1352US2007093021A1Mos transistor with recessed gate and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1452US2007090435A1Mos transistor with recessed gate and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1547US2009117723A1Methods of forming a conductive pattern in semiconductor devices and methods of manufacturing semiconductor devices having a conductive patternSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1639US2004171261A1Method of etching a silicon nitride film and method of manufacturing a semiconductor device using the sameFiled 2004·Application pending·0 cites
- 1737US8039345B2Methods of forming semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 18, 2011·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →