Inventor · disambiguated record
Byung-Hong Chung
Also filed as: CHUNG BYUNG-HONG
17 granted patents·3 pending applications·261 citations·filing 1995–2015
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD14CHUNG BYUNG-HONG3LIM JU-WAN1SAMSUNG ELECTRONICS CO LTE1SAMSUNG ELECTRONICS COL LTD1
Top patents by PatentIndex Score
20 records- 0193US9142558B2Semiconductor device having supporter and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 22, 2015·20 cites·26 claims
- 0292US9553141B2Semiconductor device having supporterSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 24, 2017·10 cites·20 claims
- 0388US8889560B2Methods of forming fine patterns for semiconductor deviceCHUNG BYUNG-HONG·Filed 2012·Granted Nov 18, 2014·11 cites·16 claims
- 0487US8970039B2Integrated circuit devices including electrode support structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Mar 3, 2015·9 cites·15 claims
- 0587US6548374B2Method for self-aligned shallow trench isolation and method of manufacturing non-volatile memory device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 15, 2003·50 cites·17 claims
- 0685US7745325B2Wiring structure of a semiconductor device, method of forming the wiring structure, non-volatile memory device including the wiring structure, and method of manufacturing the non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·15 cites·6 claims
- 0784US6914013B2Method of forming semiconductor device containing oxide/nitride/oxide dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·32 cites·24 claims
- 0882US7560768B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·8 cites·8 claims
- 0980US6744096B2Non-volatile memory device having a bit line contact pad and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 1, 2004·26 cites·7 claims
- 1078US7951671B2Method of fabricating non-volatile memory device having separate charge trap patternsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 31, 2011·6 cites·16 claims
- 1175US6593190B2Non-volatile memory device having a bit line contact pad and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTE·Filed 2002·Granted Jul 15, 2003·24 cites·16 claims
- 1269US7678650B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 16, 2010·3 cites·14 claims
- 1366US8642458B2Method of fabricating nonvolatile memory deviceCHUNG BYUNG-HONG·Filed 2012·Granted Feb 4, 2014·2 cites·16 claims
- 1462US7829437B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 9, 2010·1 cites·20 claims
- 1561US7250346B2Dual gate oxide structure in semiconductor device and method thereofSAMSUNG ELECTRONICS COL LTD·Filed 2004·Granted Jul 31, 2007·10 cites·9 claims
- 1659US5677234AMethods of forming isolated semiconductor device active regionsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 14, 1997·24 cites·8 claims
- 1751US2008207503A1Composition and Treatment Methods for Coronary Artery DiseaseCHUNG BYUNG-HONG·Filed 2005·Application pending·0 cites
- 1847US2008105919A1Non-volatile memory device having separate charge trap patterns and method of fabricating the sameLIM JU-WAN·Filed 2007·Application pending·0 cites
- 1947US2007246779A1Dual gate oxide structure in semiconductor device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2039US5523255AMethod for forming a device isolation film of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jun 4, 1996·10 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →