Inventor · disambiguated record
Masanobu Miyao
Also filed as: MIYAO MASANOBU
30 granted patents·3 pending applications·805 citations·filing 1980–2009
97Inventor score
Top patents by PatentIndex Score
33 records- 0197US5241197ATransistor provided with strained germanium layerHITACHI LTD·Filed 1991·Granted Aug 31, 1993·188 cites·22 claims
- 0289US4565584AMethod of producing single crystal film utilizing a two-step heat treatmentHITACHI LTD·Filed 1983·Granted Jan 21, 1986·76 cites·8 claims
- 0388US4599133AMethod of producing single-crystal silicon filmHITACHI LTD·Filed 1983·Granted Jul 8, 1986·67 cites·17 claims
- 0487US4937641ASemiconductor memory and method of producing the sameHITACHI LTD·Filed 1987·Granted Jun 26, 1990·67 cites·11 claims
- 0580US6903372B1Semiconductor device, method of making the same and liquid crystal display deviceHITACHI LTD·Filed 2000·Granted Jun 7, 2005·23 cites·6 claims
- 0679US4751557ADram with FET stacked over capacitorHITACHI LTD·Filed 1986·Granted Jun 14, 1988·45 cites·11 claims
- 0777US7579229B2Semiconductor device and semiconductor substrateRENESAS TECH CORP·Filed 2008·Granted Aug 25, 2009·5 cites·7 claims
- 0877US6545294B1Electronic apparatus having semiconductor device including plurality of transistors formed on a polycrystalline layered structure in which the number of crystal grains in each polycrystalline layer is gradually reduced from lower to upper layerHITACHI LTD·Filed 2000·Granted Apr 8, 2003·17 cites·2 claims
- 0974US4498951AMethod of manufacturing single-crystal filmHITACHI LTD·Filed 1982·Granted Feb 12, 1985·39 cites·18 claims
- 1072US7317207B2Semiconductor device, method of making the same and liquid crystal display deviceHITACHI LTD·Filed 2005·Granted Jan 8, 2008·4 cites·2 claims
- 1170US4808546ASOI process for forming a thin film transistor using solid phase epitaxyHITACHI LTD·Filed 1987·Granted Feb 28, 1989·37 cites·24 claims
- 1270US4394191AStacked polycrystalline silicon film of high and low conductivity layersHITACHI LTD·Filed 1980·Granted Jul 19, 1983·33 cites·10 claims
- 1368US7977221B2Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the sameSUMCO CORP·Filed 2007·Granted Jul 12, 2011·4 cites·9 claims
- 1468US4901128ASemiconductor memoryHITACHI LTD·Filed 1986·Granted Feb 13, 1990·25 cites·21 claims
- 1567US8304810B2Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germaniumSUGII NOBUYUKI·Filed 2009·Granted Nov 6, 2012·3 cites·21 claims
- 1665US7767548B2Method for manufacturing semiconductor wafer including a strained silicon layerSUMCO CORP·Filed 2007·Granted Aug 3, 2010·4 cites·20 claims
- 1762US5357131ASemiconductor memory with trench capacitorHITACHI LTD·Filed 1993·Granted Oct 18, 1994·32 cites·5 claims
- 1858US5237528ASemiconductor memoryHITACHI LTD·Filed 1992·Granted Aug 17, 1993·18 cites·9 claims
- 1955US4984048ASemiconductor device with buried side contactHITACHI LTD·Filed 1988·Granted Jan 8, 1991·20 cites·30 claims
- 2053US6888162B2Electronic apparatus having polycrystalline semiconductor thin film structureHITACHI LTD·Filed 2003·Granted May 3, 2005·3 cites·12 claims
- 2153US5214496ASemiconductor memoryHITACHI LTD·Filed 1989·Granted May 25, 1993·13 cites·42 claims
- 2250US4984038ASemiconductor memory and method of producing the sameHITACHI LTD·Filed 1988·Granted Jan 8, 1991·14 cites·6 claims
- 2348US2008111134A1Semiconductor device, method of making the same and liquid crystal display deviceYAMAGUCHI SHINYA·Filed 2008·Application pending·0 cites
- 2447US4984030AVertical MOSFET DRAMHITACHI LTD·Filed 1988·Granted Jan 8, 1991·13 cites·18 claims
- 2547US4351674AMethod of producing a semiconductor deviceHITACHI LTD·Filed 1980·Granted Sep 28, 1982·13 cites·11 claims
- 2645US4551742ASolid-state imaging deviceHITACHI LTD·Filed 1984·Granted Nov 5, 1985·10 cites·13 claims
- 2744US4570175AThree-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locationsHITACHI LTD·Filed 1983·Granted Feb 11, 1986·11 cites·3 claims
- 2841US8963124B2Semiconductor device including a plurality of different functional elements and method of manufacturing the sameMIYAO MASANOBU·Filed 2009·Granted Feb 24, 2015·0 cites·6 claims
- 2940US2005017236A1Semiconductor device and semiconductor substrateHITACHI LTD·Filed 2004·Application pending·0 cites
- 3039US2006214257A1Production method of strained silicon-SOI substrate and strained silicon-SOI substrate produced by sameNAT UNIVERSITY CORP·Filed 2006·Application pending·0 cites
- 3138US6529304B1Optical communication equipment and systemHITACHI LTD·Filed 1997·Granted Mar 4, 2003·8 cites·12 claims
- 3237US4695856ASemiconductor deviceHITACHI LTD·Filed 1984·Granted Sep 22, 1987·6 cites·3 claims
- 3336US5066355AMethod of producing hetero structureAGENCY IND SCIENCE TECHN·Filed 1989·Granted Nov 19, 1991·7 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →