Inventor · disambiguated record
Zhong Dong
Also filed as: DONG ZHONG · DONG ZHONG-HUA
23 granted patents·15 pending applications·264 citations·filing 1998–2023
95Inventor score
Files withPROMOS TECHNOLOGIES INC11DONG ZHONG10PROMOS TECHNOLOGIES PTE LTD5CHARTERED SEMICONDUCTOR MFG4SHANGHAI BILIBILI TECH CO LTD2
Top patents by PatentIndex Score
38 records- 0193US7122415B2Atomic layer deposition of interpoly oxides in a non-volatile memory devicePROMOS TECHNOLOGIES INC·Filed 2002·Granted Oct 17, 2006·67 cites·18 claims
- 0285US6534388B1Method to reduce variation in LDD series resistanceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 18, 2003·37 cites·10 claims
- 0383US7323729B2Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus thereforPROMOS TECHNOLOGIES INC·Filed 2006·Granted Jan 29, 2008·7 cites·12 claims
- 0481US7001810B2Floating gate nitridationPROMOS TECHNOLOGIES INC·Filed 2004·Granted Feb 21, 2006·22 cites·19 claims
- 0579US7910429B2Method of forming ONO-type sidewall with reduced bird's beakPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 22, 2011·28 cites·21 claims
- 0673US7387972B2Reducing nitrogen concentration with in-situ steam generationPROMOS TECHNOLOGIES PTE LTD·Filed 2006·Granted Jun 17, 2008·4 cites·24 claims
- 0769US6524910B1Method of forming dual thickness gate dielectric structures via use of silicon nitride layersCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Feb 25, 2003·13 cites·14 claims
- 0867US8283733B2Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorusDONG ZHONG·Filed 2010·Granted Oct 9, 2012·3 cites·23 claims
- 0967US7265015B2Use of chlorine to fabricate trench dielectric in integrated circuitsPROMOS TECHNOLOGIES INC·Filed 2005·Granted Sep 4, 2007·3 cites·20 claims
- 1065US7071127B2Methods for improving quality of semiconductor oxide composition formed from halogen-containing precursorPROMOS TECHNOLOGIES INC·Filed 2003·Granted Jul 4, 2006·8 cites·11 claims
- 1165US6849897B2Transistor including SiON buffer layerPROMOS TECHNOLOGIES INC·Filed 2003·Granted Feb 1, 2005·8 cites·7 claims
- 1264US7851339B2Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layerPROMOS TECHNOLOGIES PTE LTD·Filed 2008·Granted Dec 14, 2010·2 cites·19 claims
- 1364US6187633B1Method of manufacturing a gate structure for a semiconductor memory device with improved breakdown voltage and leakage rateCHARTERED SEMICONDUCTOR MFG·Filed 1998·Granted Feb 13, 2001·29 cites·16 claims
- 1459US7807577B2Fabrication of integrated circuits with isolation trenchesPROMOS TECHNOLOGIES PTE LTD·Filed 2008·Granted Oct 5, 2010·1 cites·15 claims
- 1556US7229880B2Precision creation of inter-gates insulatorPROMOS TECHNOLOGIES INC·Filed 2003·Granted Jun 12, 2007·6 cites·22 claims
- 1656US2024235147A1Potassium dihydrogen phosphate (kdp) frequency-doubling crystal structureUNIV TIANSHUI NORMAL·Filed 2023·Application pending·0 cites
- 1754US7297597B2Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSGPROMOS TECHNOLOGIES INC·Filed 2004·Granted Nov 20, 2007·6 cites·19 claims
- 1853US6261976B1Method of forming low pressure silicon oxynitride dielectrics having high reliabilityCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jul 17, 2001·18 cites·20 claims
- 1950US6893920B2Method for forming a protective buffer layer for high temperature oxide processingPROMOS TECHNOLOGIES INC·Filed 2002·Granted May 17, 2005·2 cites·14 claims
- 2048US2006008997A1Atomic layer deposition of interpoly oxides in a non-volatile memory deviceJANG CHUCK·Filed 2005·Application pending·0 cites
- 2147US2009039413A1Method to form uniform tunnel oxide for flash devices and the resulting structuresDONG ZHONG·Filed 2008·Application pending·0 cites
- 2247US2007090493A1Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained therebyPROMOS TECHNOLOGIES INC·Filed 2005·Application pending·0 cites
- 2345US7737487B2Nonvolatile memories with tunnel dielectric with chlorinePROMOS TECHNOLOGIES PTE LTD·Filed 2008·Granted Jun 15, 2010·0 cites·20 claims
- 2445US2007138579A1Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained therebyDONG ZHONG·Filed 2007·Application pending·0 cites
- 2544US2008135917A1Method to form uniform tunnel oxide for flash devices and the resulting structuresDONG ZHONG·Filed 2006·Application pending·0 cites
- 2644US2008132086A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2008·Application pending·0 cites
- 2743US12501102B2Method and apparatus for generating interactive videoSHANGHAI BILIBILI TECH CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·17 claims
- 2842US2007205446A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2007·Application pending·0 cites
- 2942US2007128800A1Use of chlorine to fabricate trench dielectric in integrated circuitsDONG ZHONG·Filed 2007·Application pending·0 cites
- 3041US2007264776A1Precision creation of inter-gates insulatorDONG ZHONG·Filed 2007·Application pending·0 cites
- 3141US2009096009A1Nonvolatile memories which combine a dielectric, charge-trapping layer with a floating gatePROMOS TECHNOLOGIES PTE LTD·Filed 2007·Application pending·0 cites
- 3239US12309464B2Graphics engine and graphics processing method applicable to playerSHANGHAI BILIBILI TECH CO LTD·Filed 2021·Granted May 20, 2025·0 cites·20 claims
- 3338US12474276B2Wafer inspection system for mitigating undesired effects associated with position offset of waferBRIGHTEST TECH TAIWAN CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 3438US9385252B2Method for insulating aluminum backboard of photovoltaicHANWHA SOLARONE QIDONG CO LTD·Filed 2013·Granted Jul 5, 2016·0 cites·3 claims
- 3537US2003153149A1Floating gate nitridationFiled 2002·Application pending·0 cites
- 3637US2003153150A1Floating gate nitridationFiled 2002·Application pending·0 cites
- 3737US2009140318A1Nonvolatile memories with higher conduction-band edge adjacent to charge-trapping dielectricDONG ZHONG·Filed 2007·Application pending·0 cites
- 3835US2009032861A1Nonvolatile memories with charge trapping layers containing silicon nitride with germanium or phosphorusDONG ZHONG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →