Inventor · disambiguated record
Avishai Kepten
Also filed as: KEPTEN AVISHAI
18 granted patents·1 pending application·573 citations·filing 1995–2012
96Inventor score
Files withMICRON TECHNOLOGY INC5NOVELLUS SYSTEMS INC5MAYER STEVEN T4CHANG JANE P1MICRON TECHNOLOGIES INC1
Top patents by PatentIndex Score
19 records- 0197US8043958B1Capping before barrier-removal IC fabrication methodNOVELLUS SYSTEMS INC·Filed 2010·Granted Oct 25, 2011·26 cites·13 claims
- 0296US8158532B2Topography reduction and control by selective accelerator removalMAYER STEVEN T·Filed 2006·Granted Apr 17, 2012·44 cites·70 claims
- 0396US7605082B1Capping before barrier-removal IC fabrication methodNOVELLUS SYSTEMS INC·Filed 2005·Granted Oct 20, 2009·36 cites·14 claims
- 0494US7799200B1Selective electrochemical accelerator removalNOVELLUS SYSTEMS INC·Filed 2006·Granted Sep 21, 2010·21 cites·27 claims
- 0594US6884719B2Method for depositing a coating having a relatively high dielectric constant onto a substrateUNIV CALIFORNIA·Filed 2002·Granted Apr 26, 2005·102 cites·43 claims
- 0694US5634974AMethod for forming hemispherical grained siliconMICRON TECHNOLOGIES INC·Filed 1995·Granted Jun 3, 1997·101 cites·74 claims
- 0793US8470191B2Topography reduction and control by selective accelerator removalMAYER STEVEN T·Filed 2007·Granted Jun 25, 2013·19 cites·10 claims
- 0893US8415261B1Capping before barrier-removal IC fabrication methodREID JONATHAN D·Filed 2011·Granted Apr 9, 2013·12 cites·6 claims
- 0993US7811925B1Capping before barrier-removal IC fabrication methodNOVELLUS SYSTEMS INC·Filed 2008·Granted Oct 12, 2010·16 cites·20 claims
- 1093US5759262AMethod of forming hemispherical grained siliconMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 2, 1998·86 cites·26 claims
- 1190US7690324B1Small-volume electroless plating cellNOVELLUS SYSTEMS INC·Filed 2005·Granted Apr 6, 2010·21 cites·32 claims
- 1284US8268154B1Selective electrochemical accelerator removalMAYER STEVEN T·Filed 2010·Granted Sep 18, 2012·5 cites·15 claims
- 1375US5962065AMethod of forming polysilicon having a desired surface roughnessMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 5, 1999·39 cites·17 claims
- 1473US8795482B1Selective electrochemical accelerator removalMAYER STEVEN T·Filed 2012·Granted Aug 5, 2014·2 cites·16 claims
- 1566US8257781B1Electroless plating-liquid systemWEBB ERIC G·Filed 2005·Granted Sep 4, 2012·5 cites·77 claims
- 1662US5688550AMethod of forming polysilicon having a desired surface roughnessMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 18, 1997·23 cites·22 claims
- 1750US6177127B1Method of monitoring emissivityMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 23, 2001·13 cites·29 claims
- 1849US6444482B1Method of monitoring power supplied to heat a substrateMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 3, 2002·2 cites·15 claims
- 1945US2006110531A1Method for depositing a coating having a relatively high dielectric constant onto a substrateCHANG JANE P·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →