US2006110531A1PendingUtilityA1

Method for depositing a coating having a relatively high dielectric constant onto a substrate

45
Individually held — no corporate assignee on recordPriority: Mar 20, 2001Filed: Apr 26, 2005Published: May 25, 2006
Est. expiryMar 20, 2021(expired)· nominal 20-yr term from priority
Inventors:Jane ChangYou-Sheng LinAvishai KeptenMichael SendlerSagy LevyRobin Bloom
H10P 14/69396H10P 14/69395H10P 14/69394H10P 14/69393H10P 14/69392H10P 14/69391H10P 14/6934H10P 14/693H10P 14/6339C23C 16/45527C23C 16/40C23C 16/45525C23C 16/52H10P 14/6938
45
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.

Claims

exact text as granted — not AI-modified
1 . A method for depositing a dielectric coating onto a substrate comprising: 
 i) providing a system comprising a reactor vessel adapted to contain the substrate and an energy source in communication with said reactor vessel for heating the substrate contained in said vessel; and    ii) subjecting the substrate to a first reaction cycle, said first reaction cycle comprising: 
 a) heating the substrate to a first deposition temperature with said energy source, wherein said first deposition temperature is greater than about 300° C.;  
 b) supplying to said reactor vessel a first gas precursor for a first deposition time period while the substrate is at said first deposition temperature, said first gas precursor having a first gas precursor flow rate, said first gas precursor comprising an organo-metallic compound;  
 c) supplying to said reactor vessel a first oxidizing gas for a first oxidizing gas time period while the substrate is at a first oxidizing gas temperature, said first oxidizing gas having a first oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the first reaction cycle; and  
   iii) subjecting the substrate to one or more additional reaction cycles to achieve a target thickness.    
   
   
       2 . A method as defined in  claim 1 , wherein at least a monolayer is of the dielectric is formed during the first reaction cycle.  
   
   
       3 . A method as defined in  claim 1 , wherein said first deposition temperature is greater than about 500° C.  
   
   
       4 . A method as defined in  claim 1 , wherein said first deposition temperature is from about 500° C. to about 900° C.  
   
   
       5 . A method as defined in  claim 1 , wherein said first oxidizing gas temperature is greater than about 300° C.  
   
   
       6 . A method as defined in  claim 1 , wherein said first oxidizing gas temperature is from about 500° C. to about 900° C.  
   
   
       7 . A method as defined in  claim 1 , further comprising: 
 subjecting the substrate to a second reaction cycle after said first reaction cycle, said second reaction cycle comprising: 
 a) supplying to said reactor vessel a second gas precursor for a second deposition time period while the substrate is at a second deposition temperature, said second deposition temperature being greater than about 300° C., said second gas precursor having a second gas precursor flow rate;  
 b) supplying to said reactor vessel a second oxidizing gas for a second oxidizing gas time period while the substrate is at a second oxidizing gas temperature, said second oxidizing gas having a second oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the second reaction cycle.  
   
   
   
       8 . A method as defined in  claim 7 , further comprising controlling the first reaction cycle and the second reaction cycle such that said first deposition temperature is different than said second deposition temperature, said first gas precursor flow rate is different than said second gas precursor flow rate, said first deposition time period is different than said second deposition time period, said first oxidizing gas temperature is different than said second oxidizing gas temperature, said first oxidizing gas flow rate is different than said second oxidizing gas flow rate, said first oxidizing gas time period is different than said second oxidizing gas time period, or combinations thereof.  
   
   
       9 . A method as defined in  claim 1 , wherein the dielectric coating has a dielectric constant greater than about 8.  
   
   
       10 . A method as defined in  claim 1 , wherein the dielectric coating has a dielectric constant from about 10 to about 80.  
   
   
       11 . A method as defined in  claim 1 , wherein the dielectric coating contains a metal oxide.  
   
   
       12 . A method as defined in  claim 11 , wherein said metal of said metal oxide coating is selected from the group consisting of aluminum, tantalum, titanium, zirconium, silicon, hafnium, yttrium, and combinations thereof.  
   
   
       13 . A method as defined in  claim 1 , wherein the dielectric coating contains a metal silicate.  
   
   
       14 . A method as defined in  claim 1 , wherein the substrate is a semiconductor wafer.  
   
   
       15 . A method for depositing a dielectric coating onto a substrate comprising: 
 i) providing a system comprising a reactor vessel adapted to contain the substrate and an energy source in communication with said reactor vessel for heating the substrate contained in said vessel; and    ii) subjecting the substrate to a first reaction cycle, said first reaction cycle comprising: 
 a) heating the substrate to a first deposition temperature with said energy source, wherein said first deposition temperature is greater than about 300° C.;  
 b) supplying to said reactor vessel a first gas precursor for a first deposition time period while the substrate is at said first deposition temperature, said first gas precursor having a first gas precursor flow rate, said first gas precursor comprising an organo-metallic compound;  
 c) supplying to said reactor vessel a first oxidizing gas for a first oxidizing gas time period while the substrate is at a first oxidizing gas temperature, said first oxidizing gas having a first oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the first reaction cycle; and  
   iii) subjecting the substrate to a second reaction cycle, said second reaction cycle comprising: 
 a) supplying to said reactor vessel a second gas precursor for a second deposition time period while the substrate is at a second deposition temperature, said second deposition temperature being greater than about 300° C., said second gas precursor having a second gas precursor flow rate;  
 b) supplying to said reactor vessel a second oxidizing gas for a second oxidizing gas time period while the substrate is at a second oxidizing gas temperature, said second oxidizing gas having a second oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the second reaction cycle; and  
   iv) optionally, subjecting the substrate to one or more additional reaction cycles.    
   
   
       16 . A method as defined in  claim 15 , wherein at least a monolayer of the dielectric is formed during the first reaction cycle, the second reaction cycle, or combinations thereof.  
   
   
       17 . A method as defined in  claim 15 , wherein said first deposition temperature is from about 500° C. to about 900° C.  
   
   
       18 . A method as defined in  claim 16 , wherein said first oxidizing gas temperature is from about 500° C. to about 900° C.  
   
   
       19 . A method as defined in  claim 15 , further comprising controlling the first reaction cycle and the second reaction cycle such that said first deposition temperature is different than said second deposition temperature, said first gas precursor flow rate is different than said second gas precursor flow rate, said first deposition time period is different than said second deposition time period, said first oxidizing gas temperature is different than said second oxidizing gas temperature, said first oxidizing gas flow rate is different than said second oxidizing gas flow rate, said first oxidizing gas time period is different than said second oxidizing gas time period, or combinations thereof.  
   
   
       20 . A method as defined in  claim 15 , wherein the dielectric coating has a dielectric constant greater than about 8.  
   
   
       21 . A method as defined in  claim 15 , wherein the dielectric coating has a dielectric constant from about 10 to about 80.  
   
   
       22 . A method as defined in  claim 15 , wherein the dielectric coating contains a metal oxide.  
   
   
       23 . A method as defined in  claim 22 , wherein said metal of said metal oxide coating is selected from the group consisting of aluminum, tantalum, titanium, zirconium, silicon, hafnium, yttrium, and combinations thereof.  
   
   
       24 . A method as defined in  claim 15 , wherein the dielectric coating contains a metal silicate.  
   
   
       25 . A method as defined in  claim 15 , wherein the substrate is a semiconductor wafer.  
   
   
       26 . A method for depositing a dielectric coating, said method comprising: 
 i) providing a system comprising a reactor vessel adapted to contain the semiconductor wafer and an energy source in communication with said reactor vessel for heating the semiconductor wafer contained in said vessel; and    ii) subjecting the semiconductor wafer to a first reaction cycle, said first reaction cycle comprising: 
 a) heating the semiconductor wafer to a first deposition temperature with said energy source, wherein said first deposition  combinations thereof.  
   
   
   
       28 . A method as defined in  claim 26 , wherein said first deposition temperature is from about 500° C. to about 900° C.  
   
   
       29 . A method as defined in  claim 26 , wherein said first oxidizing gas temperature is from about 500° C. to about 900° C.  
   
   
       30 . A method as defined in  claim 26 , further comprising controlling the first reaction cycle and the second reaction cycle such that said first deposition temperature is different than said second deposition temperature, said first gas precursor flow rate is different than said second gas precursor flow rate, said first deposition time period is different than said second deposition time period, said first oxidizing gas temperature is different than said second oxidizing gas temperature, said first oxidizing gas flow rate is different than said second oxidizing gas flow rate, said first oxidizing gas time period is different than said second oxidizing gas time period, or combinations thereof.  
   
   
       31 . A method as defined in  claim 26 , wherein said first gas precursor, said second gas precursor, or combinations thereof comprises an inorganic silicon compound.  
   
   
       32 . A method as defined in  claim 26 , wherein the dielectric coating has a dielectric constant greater than about 8.  
   
   
       33 . A method as defined in  claim 26 , wherein the dielectric coating has a dielectric constant from about 10 to about 80.  
   
   
       34 . A method as defined in  claim 26 , wherein said metal silicate is selected from the group consisting of zirconium silicate, hafnium silicate, and combinations thereof.

Join the waitlist — get patent alerts

Track US2006110531A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.