Assignee
FORCE MOS TECHNOLOGY CO LTD
TW·36 granted patents·26 pending applications·342 citations·filing 2007–2015
Top patents by PatentIndex Score
62 records- 0198US8829607B1Fast switching super-junction trench MOSFETsFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Sep 9, 2014·42 cites·18 claims
- 0295US7816720B1Trench MOSFET structure having improved avalanche capability using three masks processFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Oct 19, 2010·35 cites·13 claims
- 0394US8575690B1Super-junction trench MOSFET having deep trenches with buried voidsFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Nov 5, 2013·15 cites·11 claims
- 0494US8373225B2Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodesFORCE MOS TECHNOLOGY CO LTD·Filed 2011·Granted Feb 12, 2013·17 cites·21 claims
- 0593US9293527B1Super-junction trench MOSFET structureFORCE MOS TECHNOLOGY CO LTD·Filed 2015·Granted Mar 22, 2016·9 cites·8 claims
- 0693US9099320B2Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trenchFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Aug 4, 2015·12 cites·2 claims
- 0792US7897997B2Trench IGBT with trench gates underneath contact areas of protection diodesFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Mar 1, 2011·21 cites·21 claims
- 0892US7626231B1Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structuresFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Dec 1, 2009·21 cites·8 claims
- 0991US7989887B2Trench MOSFET with trenched floating gates as terminationFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Aug 2, 2011·20 cites·22 claims
- 1090US8372717B2Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2011·Granted Feb 12, 2013·10 cites·10 claims
- 1189US8487372B1Trench MOSFET layout with trenched floating gates and trenched channel stop gates in terminationFORCE MOS TECHNOLOGY CO LTD·Filed 2012·Granted Jul 16, 2013·10 cites·6 claims
- 1288US8378392B2Trench MOSFET with body region having concave-arc shapeFORCE MOS TECHNOLOGY CO LTD·Filed 2010·Granted Feb 19, 2013·10 cites·12 claims
- 1388US7791136B1Trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Sep 7, 2010·13 cites·11 claims
- 1487US7816732B2Integrated trench MOSFET and Schottky rectifier with trench contact structureFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Oct 19, 2010·14 cites·12 claims
- 1584US8686468B2Semiconductor power device having wide termination trench and self-aligned source regions for mask savingFORCE MOS TECHNOLOGY CO LTD·Filed 2012·Granted Apr 1, 2014·6 cites·20 claims
- 1684US8004009B2Trench MOSFETS with ESD Zener diodeFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Aug 23, 2011·10 cites·8 claims
- 1783US7956410B2Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and source shortageFORCE MOS TECHNOLOGY CO LTD·Filed 2010·Granted Jun 7, 2011·6 cites·7 claims
- 1882US7629634B2Trenched MOSFET with trenched source contactFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Dec 8, 2009·7 cites·9 claims
- 1981US8373224B2Super-junction trench MOSFET with resurf stepped oxides and trenched contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2011·Granted Feb 12, 2013·5 cites·24 claims
- 2081US8034686B2Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contactsFORCE MOS TECHNOLOGY CO LTD·Filed 2010·Granted Oct 11, 2011·5 cites·2 claims
- 2179US7936014B2Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradationFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted May 3, 2011·7 cites·6 claims
- 2278US8030702B2Trenched MOSFET with guard ring and channel stopFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Oct 4, 2011·7 cites·8 claims
- 2378US7898026B2LDMOS with double LDD and trenched drainFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Mar 1, 2011·4 cites·16 claims
- 2477US8384194B2Power semiconductor device comprising a plurality of trench IGBTsFORCE MOS TECHNOLOGY CO LTD·Filed 2012·Granted Feb 26, 2013·3 cites·13 claims
- 2577US7786528B2Metal schemes of trench MOSFET for copper bondingFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Granted Aug 31, 2010·7 cites·13 claims
- 2676US8004036B2MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvementFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Aug 23, 2011·6 cites·18 claims
- 2775US7629646B2Trench MOSFET with terraced gate and manufacturing method thereofFORCE MOS TECHNOLOGY CO LTD·Filed 2007·Granted Dec 8, 2009·6 cites·5 claims
- 2874US8999789B2Super-junction trench MOSFETs with short terminationsFORCE MOS TECHNOLOGY CO LTD·Filed 2014·Granted Apr 7, 2015·2 cites·4 claims
- 2969US7847346B2Trench MOSFET with trench source contact having copper wire bondingFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Granted Dec 7, 2010·7 cites·20 claims
- 3062US9337328B1Super-junction trench MOSFETs with closed cell layoutFORCE MOS TECHNOLOGY CO LTD·Filed 2014·Granted May 10, 2016·1 cites·7 claims
- 3162US8722434B2Integrated trench MOSFET with trench Schottky rectifierFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted May 13, 2014·1 cites·11 claims
- 3261US8704297B1Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate chargeFORCE MOS TECHNOLOGY CO LTD·Filed 2012·Granted Apr 22, 2014·1 cites·8 claims
- 3360US9018701B2Avalanche capability improvement in power semiconductor devices using three masks processFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Apr 28, 2015·1 cites·16 claims
- 3460US8759910B2Trench MOSFET with trenched floating gates having thick trench bottom oxide as terminationFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Jun 24, 2014·1 cites·8 claims
- 3554US2014213026A1Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks processFORCE MOS TECHNOLOGY CO LTD·Filed 2014·Application pending·0 cites
- 3653US9000515B2Super-junction trench MOSFETs with short terminationsFORCE MOS TECHNOLOGY CO LTD·Filed 2013·Granted Apr 7, 2015·0 cites·11 claims
- 3751US8889514B2Trench MOSFET having a top side drainFORCE MOS TECHNOLOGY CO LTD·Filed 2014·Granted Nov 18, 2014·0 cites·1 claims
- 3849US2010171173A1Trench mosfet with improved source-body contactFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 3949US2009212354A1Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortateFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Application pending·0 cites
- 4049US2010264488A1Low Qgd trench MOSFET integrated with schottky rectifierFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 4148US2009315104A1Trench MOSFET with shallow trench structuresFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 4248US2009309097A1Testing device on water for monitoring vertical mosfet on-resistanceFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Application pending·0 cites
- 4347US2010090270A1Trench mosfet with short channel formed by pn double epitaxial layersFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Application pending·0 cites
- 4446US2011079844A1Trench mosfet with high cell densityFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 4545US2011006362A1Trench MOSFET with on-resistance reductionFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 4645US2010200912A1Mosfets with terrace irench gate and improved source-body contactFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 4745US2010176446A1MOSFET with source contact in trench and integrated schottky diodeFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 4845US2011068389A1Trench MOSFET with high cell densityFORCE MOS TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 4945US2015221733A1Trench mosfet with self-aligned source and contact regions using three masks processFORCE MOS TECHNOLOGY CO LTD·Filed 2014·Application pending·0 cites
- 5044US2009309181A1Trench schottky with multiple epi structureFORCE MOS TECHNOLOGY CO LTD·Filed 2008·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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