USRE34696EExpiredUtility

Semiconductor device housing with electrodes in press contact with the opposite sides of chip

Assignee: MITSUBISHI ELECTRIC CORPPriority: Nov 29, 1985Filed: Dec 8, 1992Granted: Aug 16, 1994
Est. expiryNov 29, 2005(expired)· nominal 20-yr term from priority
Inventors:Mituo Ohdate
H10W 76/138
29
PatentIndex Score
3
Cited by
16
References
6
Claims

Abstract

In a .[.semicondur.]. .Iadd.semiconductor .Iaddend.device comprising a semiconductor element, a pair of electrodes provided on the opposite sides of the semiconductor element, and a cylindrical member provided to surround the semiconductor element and to be in engagement with the pair of electrodes, each of the electrodes has a thread portion on its outer perphery, and the cylindrical member has a thread portion on its inner peripheral surface screwed onto each of the thread portions of the electrodes, thereby to provide a hermetic seal for the semiconductor element.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A semiconductor device comprising a semiconductor element,   a pair of electrodes provided on the opposite sides of the semiconductor element, and   a cylindrical member provided to surround the semiconductor element and to be in engagement with the pair of electrodes,   each of the electrodes having a thread portion on its outer periphery, and   .Iadd.a resilient annular member surrounding the semiconductor element,   wherein .Iaddend.the cylindrical member .[.having.]. .Iadd.has .Iaddend.a thread portion on its inner peripheral surface screwed onto each of the thread portions of the electrodes, thereby to provide a hermetic seal for the semiconductor element.Iadd.,   wherein the resilient annular member is compressed between the electrodes.Iaddend..   
     
     
       2. A device according to claim 1, wherein the cylindrical member is an insulating member. 
     
     
       3. A device according to claim 2, wherein the cylindrical member is formed of a plastic material having an elongation rate within the range of 2 to 10 percent. 
     
     
       4. A device according to claim 1, wherein the thread portions of the cylindrical member are formed at both ends of the cylindrical member. 
     
     
       5. A device according to claim 1, wherein the thread portion of one of the electrodes has at least two pits for engagement with pins or protrusions of a tool used for screwing said one of the electrodes and the cylindrical member with each other. 
     
     
       6. A device according to claim 1, .[.further comprising a resilient annular member surrounding the semiconductor element,.]. wherein each of the electrodes has a flange portion .[.and.]..Iadd., .Iaddend.the resilient annular member is compressed between the flange portions of the electrodes .Iadd.and the thread portion on each of the electrodes is provided on the outer periphery of the flange portion.Iaddend.. .[.7. A device according to claim 6, wherein the thread portion on each of the electrodes are 
     
     
        provided on the outer periphery of the flange portion..]. 8. A device according to claim 6, wherein the resilient annular member is formed of 
     
     
        silicone rubber. 9. An electronic device comprising: a semiconductor element;   first and second electrodes on opposite sides of said semiconnector element.Iadd., each of said electrodes comprising a threaded portion.Iaddend.; .[.and.].   a cylindrical body which substantially surrounds said semiconductor element .[.and is in.]..Iadd., said cylindrical body having threaded portions for mating with the corresponding threaded portions of each of said first and second electrodes to effect .Iaddend.a hermetically sealed engagement with said first and second electrodes; .Iadd.and .Iaddend.   .[.wherein at least one of said electrodes comprises a threaded portion, said threaded portion of said electrode mating with a threaded portion of said cylindrical body to effect a hermetic seal.].   .Iadd.a resilient annular member surrounding the semiconductor element within said cylindrical body and compressible between said first and   
     
     
        second electrodes.Iaddend.. 10. The device of claim 9, wherein said body is formed of a polymer material having an elongation within the range of 2 
     
     
        to 10%. 11. A device according to claim 1, wherein said semiconductor element comprises a silicon wafer having molybdenum disks on two surfaces 
     
     
        thereof. 12. A device according to claim 1, wherein said first and second electrodes are provided on opposite surfaces of said semiconductor 
     
     
        element. 13. A device according to claim 1, wherein said semiconductor 
     
     
        element is placed between said first and second electrodes. 14. A device according to claim 1, wherein exposed surfaces of said semiconductor 
     
     
        element are not covered with gold. 15. A device according to claim 6, wherein said semiconductor element comprises a silicon wafer having 
     
     
        molybdenum disks on two surfaces thereof. 16. A device according to claim 6, wherein said first and second electrodes are provided on opposite 
     
     
        surfaces of said semiconductor element. 17. A device according to claim 6, wherein said semiconductor element is placed between said first and second 
     
     
        electrodes. 18. A device according to claim 9, wherein said semiconductor element comprises a silicon wafer having molybdenum disks on two surfaces 
     
     
        thereof. 19. An electronic device comprising: a semiconductor element;   a cathode electrode and an anode electrode connected to opposite surfaces of said semiconductor element, said semiconductor element being placed between said anode and cathode electrodes;   a substantially cylindrical body, which includes at least one threaded portion on an inner surface thereof, and which substantially surrounds said semiconductor element; and   a resilient annular member, which surrounds said semiconductor element within said cylindrical body;   wherein each of said electrodes comprises a threaded portion, which mates with said threaded portion of said cylindrical body to effect a hermetic seal therebetween.Iadd., and the resilient annular member is compressed   
     
     
        between the electrodes.Iaddend.. 20. A device according to claim 19, wherein said resilient annular member is in contact with the periphery of 
     
     
        said semiconductor element. .Iadd.21.  A device according to claim 1, wherein each of said electrodes is provided with engagement means for engagement with means for screwing the cylindrical member and the electrode together. .Iaddend. .Iadd.22. A device according to claim 21, wherein said engagement means comprises at least two pits in the thread portion for engagement with pins or protrusions of a tool used for screwing said electrodes and cylindrical member together. .Iaddend. .Iadd.23. A device according to claim 9, wherein each of said electrodes is provided with engagement means for engagement with means for screwing the cylindrical member and the electrode together. .Iaddend. .Iadd.24. A device according to claim 23, wherein said engagement means comprises at least two pits in the thread portion for engagement with pins or protrusions of a tool used for screwing said electrodes and cylindrical member together. .Iaddend. .Iadd.25. A device according to claim 19, wherein each of said electrodes is provided with engagement means for engagement with means for screwing the cylindrical member and the 
     
     
        electrode together. .Iaddend. .Iadd.26.  A device according to claim 25, wherein said engagement means comprises at least two pits in the thread portion for engagement with pins or protrusions of a tool

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