BPSG planarization method having improved planarity and reduced chatter mark defects

Abstract

A method for improving the planarization of a BPSG layer over a semiconductor substrate, where the substrate contains underlying structures, is disclosed. The method comprises the steps of: forming a first borophosphosilicate glass (BPSG) layer over and between the underlying structures; reflowing the first BPSG layer using a thermal process; performing a chemical mechanical polishing (CMP) step on the first BPSG layer; forming a second BPSG layer over the first BPSG layer; and reflowing the second BPSG layer using a thermal process.

What is claimed is: 
     
       1. A method for improving the planarization of a BPSG layer over the frontside of a semiconductor substrate, said substrate containing underlying structures, said method comprising: forming a first borophosphosilicate glass (BPSG) layer over and between said underlying structures;   reflowing said first BPSG layer using a thermal process;   after reflowing said first BPSG layer, performing a chemical mechanical polishing (CMP) on said first BPSG layer;   forming a second BPSG layer over said first BPSG layer after said first BPSG layer is polished by said CMP; and   reflowing said second BPSG layer using a thermal process.   
     
     
       2. The method of claim 1 further including the step of forming a tetraethylorthosilicate (TEOS) oxide over said second BPSG layer. 
     
     
       3. The method of claim 1, wherein the temperature of said thermal processes are about 800-950° C. 
     
     
       4. The method of claim 3 wherein the time for the reflow of said first BPSG layer is between 15 and 60 minutes and the time for the reflow of said second BPSG layer is between 10 and 45 minutes. 
     
     
       5. The method of claim 1, wherein the thickness of said second BPSG layer is between 2000 and 5000 angstroms. 
     
     
       6. The method of claim 1, wherein the thickness of said first BPSG layer is between 4750 and 5750 angstroms. 
     
     
       7. The method of claim 5, wherein the thickness of said first BPSG layer is between 4750 and 5750 angstroms. 
     
     
       8. The method of claim 1 wherein said first BPSG layer has a boron dopant level of between 3-5% and a phosphorous level of between 4-5% and said second BPSG layer has a boron dopant level of 4-7% and a phosphorous dopant level of 1-4%.