Assignee
PROMOS TECHNOLOGIES INC
TW·323 granted patents·117 pending applications·3,869 citations·filing 1998–2009
Top patents by PatentIndex Score
440 records- 0198US6855610B2Method of forming self-aligned contact structure with locally etched gate conductive layerPROMOS TECHNOLOGIES INC·Filed 2002·Granted Feb 15, 2005·375 cites·29 claims
- 0296US7018895B2Nonvolatile memory cell with multiple floating gates formed after the select gatePROMOS TECHNOLOGIES INC·Filed 2005·Granted Mar 28, 2006·42 cites·29 claims
- 0393US7122415B2Atomic layer deposition of interpoly oxides in a non-volatile memory devicePROMOS TECHNOLOGIES INC·Filed 2002·Granted Oct 17, 2006·67 cites·18 claims
- 0493US6885044B2Arrays of nonvolatile memory cells wherein each cell has two conductive floating gatesPROMOS TECHNOLOGIES INC·Filed 2003·Granted Apr 26, 2005·78 cites·30 claims
- 0592US7061823B2Limited output address register technique providing selectively variable write latency in DDR2 (double data rate two) integrated circuit memory devicesPROMOS TECHNOLOGIES INC·Filed 2004·Granted Jun 13, 2006·76 cites·23 claims
- 0689US6526996B1Dry clean method instead of traditional wet clean after metal etchPROMOS TECHNOLOGIES INC·Filed 2000·Granted Mar 4, 2003·78 cites·20 claims
- 0788US7053438B2Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gatesPROMOS TECHNOLOGIES INC·Filed 2004·Granted May 30, 2006·34 cites·13 claims
- 0888US6632742B2Method for avoiding defects produced in the CMP processPROMOS TECHNOLOGIES INC·Filed 2001·Granted Oct 14, 2003·57 cites·6 claims
- 0988US6429148B1Anisotropic formation process of oxide layers for vertical transistorsPROMOS TECHNOLOGIES INC·Filed 2001·Granted Aug 6, 2002·82 cites·8 claims
- 1088US6391705B1Fabrication method of high-density semiconductor memory cell structure having a trenchPROMOS TECHNOLOGIES INC·Filed 2000·Granted May 21, 2002·44 cites·9 claims
- 1188US6153116AMethod of detecting end point and monitoring uniformity in chemical-mechanical polishing operationPROMOS TECHNOLOGIES INC·Filed 1998·Granted Nov 28, 2000·96 cites·16 claims
- 1287US6818515B1Method for fabricating semiconductor device with loop line pattern structurePROMOS TECHNOLOGIES INC·Filed 2003·Granted Nov 16, 2004·31 cites·2 claims
- 1387US6605535B1Method of filling trenches using vapor-liquid-solid mechanismPROMOS TECHNOLOGIES INC·Filed 2002·Granted Aug 12, 2003·53 cites·20 claims
- 1486US7456458B2Dynamic random access memory structurePROMOS TECHNOLOGIES INC·Filed 2006·Granted Nov 25, 2008·12 cites·14 claims
- 1586US6838342B1Nonvolatile memory fabrication methods comprising lateral recessing of dielectric sidewalls at substrate isolation regionsPROMOS TECHNOLOGIES INC·Filed 2003·Granted Jan 4, 2005·42 cites·13 claims
- 1686US6511905B1Semiconductor device with Si-Ge layer-containing low resistance, tunable contactPROMOS TECHNOLOGIES INC·Filed 2002·Granted Jan 28, 2003·36 cites·18 claims
- 1785US7091091B2Nonvolatile memory fabrication methods in which a dielectric layer underlying a floating gate layer is spaced from an edge of an isolation trench and/or an edge of the floating gate layerPROMOS TECHNOLOGIES INC·Filed 2004·Granted Aug 15, 2006·30 cites·20 claims
- 1884US7301196B2Nonvolatile memories and methods of fabricationPROMOS TECHNOLOGIES INC·Filed 2005·Granted Nov 27, 2007·10 cites·13 claims
- 1984US7238983B2Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structuresPROMOS TECHNOLOGIES INC·Filed 2005·Granted Jul 3, 2007·9 cites·24 claims
- 2084US7195964B2Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuitPROMOS TECHNOLOGIES INC·Filed 2005·Granted Mar 27, 2007·11 cites·23 claims
- 2184US6507800B1Method for testing semiconductor wafersPROMOS TECHNOLOGIES INC·Filed 2000·Granted Jan 14, 2003·61 cites·20 claims
- 2284US6432728B1Method for integration optimization by chemical mechanical planarization end-pointing techniquePROMOS TECHNOLOGIES INC·Filed 2000·Granted Aug 13, 2002·43 cites·11 claims
- 2383US7323729B2Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus thereforPROMOS TECHNOLOGIES INC·Filed 2006·Granted Jan 29, 2008·7 cites·12 claims
- 2483US6951782B2Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusionsPROMOS TECHNOLOGIES INC·Filed 2003·Granted Oct 4, 2005·27 cites·39 claims
- 2583US6703273B2Aggressive capacitor array cell layout for narrow diameter DRAM trench capacitor structures via SOI technologyPROMOS TECHNOLOGIES INC·Filed 2002·Granted Mar 9, 2004·45 cites·27 claims
- 2682US7732801B2Phase change memory devicePROMOS TECHNOLOGIES INC·Filed 2007·Granted Jun 8, 2010·9 cites·20 claims
- 2782US6770954B2Semiconductor device with SI-GE layer-containing low resistance, tunable contactPROMOS TECHNOLOGIES INC·Filed 2002·Granted Aug 3, 2004·26 cites·14 claims
- 2882US6703279B2Semiconductor device having contact of Si-Ge combined with cobalt silicidePROMOS TECHNOLOGIES INC·Filed 2002·Granted Mar 9, 2004·31 cites·40 claims
- 2982US6521956B1Semiconductor device having contact of Si-Ge combined with cobalt silicidePROMOS TECHNOLOGIES INC·Filed 2002·Granted Feb 18, 2003·29 cites·18 claims
- 3082US6270397B1Chemical mechanical polishing device with a pressure mechanismPROMOS TECHNOLOGIES INC·Filed 2000·Granted Aug 7, 2001·24 cites·16 claims
- 3181US7001810B2Floating gate nitridationPROMOS TECHNOLOGIES INC·Filed 2004·Granted Feb 21, 2006·22 cites·19 claims
- 3281US6844586B2Fabrication of gate dielectric in nonvolatile memories having select, floating and control gatesPROMOS TECHNOLOGIES INC·Filed 2004·Granted Jan 18, 2005·19 cites·12 claims
- 3380US6355518B1Method for making a DRAM cell with deep-trench capacitors and overlying vertical transistorsPROMOS TECHNOLOGIES INC·Filed 2000·Granted Mar 12, 2002·25 cites·20 claims
- 3479US7989795B2Phase change memory device and method for fabricating the samePROMOS TECHNOLOGIES INC·Filed 2007·Granted Aug 2, 2011·10 cites·40 claims
- 3579US7910429B2Method of forming ONO-type sidewall with reduced bird's beakPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 22, 2011·28 cites·21 claims
- 3679US6737316B2Method of forming a deep trench DRAM cellPROMOS TECHNOLOGIES INC·Filed 2001·Granted May 18, 2004·27 cites·28 claims
- 3779US6391706B2Method for making deep trench capacitors for DRAMs with reduced faceting at the substrate edge and providing a more uniform pad Si3N4layer across the substratePROMOS TECHNOLOGIES INC·Filed 2001·Granted May 21, 2002·26 cites·17 claims
- 3878US7436526B2Real-time system for monitoring and controlling film uniformity and method of applying the samePROMOS TECHNOLOGIES INC·Filed 2007·Granted Oct 14, 2008·8 cites·20 claims
- 3978US6821842B1[DRAM structure and fabricating method thereof]PROMOS TECHNOLOGIES INC·Filed 2004·Granted Nov 23, 2004·21 cites·18 claims
- 4078US6704691B2Method and system for in-line monitoring process performance using measurable equipment signalsPROMOS TECHNOLOGIES INC·Filed 2002·Granted Mar 9, 2004·23 cites·15 claims
- 4178US6580960B1System and method for finding an operation/tool combination that causes integrated failure in a semiconductor fabrication facilityPROMOS TECHNOLOGIES INC·Filed 2000·Granted Jun 17, 2003·24 cites·15 claims
- 4278US6479852B1Memory cell having a deep trench capacitor and a vertical channelPROMOS TECHNOLOGIES INC·Filed 2001·Granted Nov 12, 2002·26 cites·17 claims
- 4378US6475906B1Gate contact etch sequence and plasma doping method for sub-150 NM DT-based DRAM devicesPROMOS TECHNOLOGIES INC·Filed 2001·Granted Nov 5, 2002·22 cites·25 claims
- 4477US7230295B2Nonvolatile memory cell with multiple floating gates formed after the select gatePROMOS TECHNOLOGIES INC·Filed 2005·Granted Jun 12, 2007·5 cites·7 claims
- 4577US7015091B1Integration of silicon carbide into DRAM cell to improve retention characteristicsPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 21, 2006·17 cites·16 claims
- 4677US6924241B2Method of making a silicon nitride film that is transmissive to ultraviolet lightPROMOS TECHNOLOGIES INC·Filed 2003·Granted Aug 2, 2005·23 cites·10 claims
- 4777US6461226B1Chemical mechanical polishing of a metal layer using a composite polishing padPROMOS TECHNOLOGIES INC·Filed 2000·Granted Oct 8, 2002·22 cites·20 claims
- 4876US6936521B2Alignment mark and alignment method using the same for photolithography to eliminating process bias errorPROMOS TECHNOLOGIES INC·Filed 2004·Granted Aug 30, 2005·20 cites·18 claims
- 4976US6902974B2Fabrication of conductive gates for nonvolatile memories from layers with protruding portionsPROMOS TECHNOLOGIES INC·Filed 2003·Granted Jun 7, 2005·16 cites·13 claims
- 5076US6749484B2Chemical mechanical polishing (CMP) apparatus with temperature controlPROMOS TECHNOLOGIES INC·Filed 2002·Granted Jun 15, 2004·19 cites·6 claims
Showing the top 50 of 440 patent records by PatentIndex Score.
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