US2025308969A1PendingUtilityA1

Multi-modal electrostatic chucking

Assignee: LAM RES CORPPriority: May 6, 2022Filed: May 2, 2023Published: Oct 2, 2025
Est. expiryMay 6, 2042(~15.8 yrs left)· nominal 20-yr term from priority
H10P 72/722H01J 37/32715H01J 37/32183H01L 21/6833
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Claims

Abstract

Multi-modal electrostatic chuck (ESC) apparatus, and systems and methods for operating an ESC are provided. In some embodiments, the ESC may operate in monopolar clamping mode or bipolar clamping mode. In some embodiments, the ESC may utilize a pair of electrodes for the monopolar and bipolar clamping mode. In some embodiments, each of the pair of electrodes may be electrically coupled to a respective power source. In some embodiments, the ESC may be operated in a first clamping mode (e.g., bipolar clamping mode), and based at least on a change in a processing environment, operated in a second clamping mode (e.g., monopolar clamping mode).

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A system configured to operate an electrostatic chuck (ESC) in a plurality of modes, the system comprising:
 a plurality of clamping electrodes associated with the ESC;   a plurality of power sources electrically coupled to the plurality of clamping electrodes;   a controller coupled to the plurality of power sources, wherein the controller is configured to:
 clamp a substrate to the ESC using a first clamping mode, the first clamping mode comprising a first configuration of the plurality of clamping electrodes and the plurality of power sources; and 
 during operation of the ESC using the first clamping mode, switch from the first clamping mode to clamp the substrate to the ESC using a second clamping mode, the second clamping mode comprising a second configuration of the plurality of clamping electrodes and the plurality of power sources, the second configuration being different from the first configuration. 
   
     
     
         2 . The system of  claim 1 , wherein:
 the first clamping mode comprises a bipolar clamping mode; and   the second clamping mode comprises a monopolar clamping mode.   
     
     
         3 . The system of  claim 1 , wherein:
 the first clamping mode comprises a monopolar clamping mode; and   the second clamping mode comprises a bipolar clamping mode.   
     
     
         4 . The system of  claim 3 , wherein:
 the plurality of clamping electrodes comprises a first clamping electrode and a second clamping electrode;   the plurality of power sources comprises a first power source and a second power source; and   the bipolar clamping mode comprises causing the first power source to supply a first voltage at a first polarity to the first clamping electrode, and causing at least the second power source to supply a second voltage at a second polarity to the second clamping electrode, the second polarity opposing the first polarity.   
     
     
         5 . The system of  claim 3 , wherein:
 the plurality of clamping electrodes comprises a first clamping electrode and a second clamping electrode;   the plurality of power sources comprises a first power source and a second power source; and   the monopolar clamping mode comprises causing the first power source to supply a first voltage at a first polarity to the first clamping electrode, and causing at least the second power source to supply the first voltage at the first polarity to the second clamping electrode.   
     
     
         6 . The system of  claim 1 , wherein the switch from the first clamping mode to the second clamping mode is based on a change in a processing environment. 
     
     
         7 . The system of  claim 6 , wherein the change in the processing environment comprises an introduction of plasma within a process chamber. 
     
     
         8 . The system of  claim 6 , wherein the change in the processing environment comprises a signal from the controller. 
     
     
         9 . The system of  claim 6 , wherein:
 the change in the processing environment comprises an introduction of plasma in the process chamber; and   the switch from the first clamping mode to the second clamping mode is configured to occur responsive to the introduction of the plasma in the process chamber.   
     
     
         10 . The system of  claim 9 , wherein:
 the controller is further configured to, based on a second change in the processing environment, switch from the second clamping mode to clamp the substrate to the ESC using the first clamping mode;   the second change in the processing environment comprises removal of plasma; and   the switch from the second clamping mode to the first clamping mode is configured to occur a period of time prior to the removal of the plasma.   
     
     
         11 . A method of operating an electrostatic chuck (ESC) in multiple modes, the method comprising:
 operating the ESC in a first clamping mode; and   during a portion of the operation in the first clamping mode, and based on a change in a processing environment, operating the ESC in a second clamping mode;   wherein each of the first clamping mode and the second clamping mode comprises clamping a substrate to the ESC using respective configurations of clamping electrodes associated with the ESC.   
     
     
         12 . The method of  claim 11 , wherein the first clamping mode comprises a bipolar clamping mode of the ESC, and the second clamping mode comprises a monopolar clamping mode of the ESC. 
     
     
         13 . The method of  claim 12 , wherein:
 the bipolar clamping mode comprises supplying a first voltage at a first polarity to a first clamping electrode of the ESC, and supplying a second voltage at a second polarity to a second clamping electrode of the ESC, the second polarity opposing the first polarity; and   the monopolar clamping mode comprises supplying the first voltage at the first polarity to the first and second clamping electrodes of the ESC.   
     
     
         14 . The method of  claim 11 , wherein the first clamping mode comprises a monopolar clamping mode of the ESC, and the second clamping mode comprises a bipolar clamping mode of the ESC. 
     
     
         15 . The method of  claim 14 , wherein:
 the bipolar clamping mode comprises supplying a first voltage at a first polarity to a first clamping electrode of the ESC, and supplying a second voltage at a second polarity to a second clamping electrode of the ESC, the second polarity opposing the first polarity; and   the monopolar clamping mode comprises supplying the first voltage at the first polarity to the first and second clamping electrodes of the ESC.   
     
     
         16 . The method of  claim 11 , wherein the change in the processing environment comprises an introduction of plasma in the processing environment or a removal of the plasma in the processing environment. 
     
     
         17 . An electrostatic chuck (ESC) operable in a substrate processing environment, the ESC comprising:
 a first clamping electrode electrically coupled to a first power source; and   a second clamping electrode electrically coupled to a second power source;   wherein the ESC is configured to:
 clamp a substrate to the ESC using a first clamping mode; and 
 during a portion of the first clamping mode, switch to clamp the substrate to the ESC using a second clamping mode; 
   wherein the first clamping mode comprises a first voltage received at the first clamping electrode from the first power source, and a second voltage received at the second clamping electrode from the second power source, the first and second voltage having opposing polarities; and   wherein the second clamping mode comprises a voltage received at the first clamping electrode from the first power source and the second clamping electrode from the second power source.   
     
     
         18 . The ESC of  claim 17 , wherein the ESC is further configured to clamp the substrate to the ESC using the second clamping mode based at least on a change in the substrate processing environment. 
     
     
         19 . The ESC of  claim 18 , wherein the change in the substrate processing environment comprises an introduction of plasma in the processing environment or a removal of the plasma in the substrate processing environment. 
     
     
         20 . The ESC of  claim 17 , wherein the clamping of the substrate using the second clamping mode is configured to occur a prescribed time before or after a change in the substrate processing environment.

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