Generation of Hydrogen Reactive Species For Processing of Workpieces

Abstract

Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

1 - 18 . (canceled) 
     
     
         19 . A method for processing a workpiece, the method comprising:
 generating one or more species in an inert gas in a first chamber;   filtering one or more ions in the first chamber using a separation grid to generate a filtered mixture;   injecting a hydrogen gas downstream of the first chamber into the filtered mixture to generate one or more hydrogen radicals;   exposing the workpiece to the one or more hydrogen radicals in a second chamber, the second chamber being separated from the first chamber by the separation grid.   
     
     
         20 . (canceled) 
     
     
         21 . The method of  claim 19 , wherein injecting a hydrogen gas downstream of the first chamber into the filtered mixture to generate one or more hydrogen radicals comprises mixing hydrogen gas with neutral species passing through the separation grid. 
     
     
         22 . The method of  claim 19 , wherein injecting a hydrogen gas downstream of the first chamber into the filtered mixture to generate one or more hydrogen radicals comprises mixing hydrogen gas with neutral species in the separation grid. 
     
     
         23 . The method of  claim 19 , wherein the inert gas comprises helium. 
     
     
         24 . The method of  claim 19 , wherein the plasma is generated using an inductively coupled plasma source. 
     
     
         25 . The method of  claim 19 , wherein exposing the workpiece in the second chamber to the one or more hydrogen radicals at least partially removes a photoresist layer on the workpiece. 
     
     
         26 . The method of  claim 19 , wherein exposing the workpiece in a processing chamber to the one or more hydrogen radicals at least partially removes a residual organic material on the workpiece. 
     
     
         27 . The method of  claim 19 , further comprising heating the workpiece to a temperature greater than about 400° C., wherein exposing the workpiece in the processing chamber to the one or more hydrogen radicals modifies silicon atom mobility. 
     
     
         28 . The method of  claim 19 , wherein exposing the workpiece in a second chamber to the one or more hydrogen radicals at least partially removes a damaged silicon layer. 
     
     
         29 . The method of  claim 19 , wherein exposing the workpiece in the processing chamber to the one or more hydrogen radicals at least partially removes a suboxide layer. 
     
     
         30 . The method of  claim 19 , further comprising mixing the one or more hydrogen radicals with a metal-containing gas to deposit a metal on the workpiece. 
     
     
         31 . The method of  claim 30 , wherein the metal-containing gas comprises titanium. 
     
     
         32 . The method of  claim 30 , wherein the metal-containing gas comprises tantalum. 
     
     
         33 . The method of  claim 30 , wherein the metal-containing gas comprises aluminum.