Apparatus and method for treating substrate

Abstract

The inventive concept provides an apparatus and method for treating a substrate with a gas. The apparatus includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.

1 . An apparatus for treating a substrate, the apparatus comprising:
 a chamber having a process space in which the substrate is treated;   a substrate support unit configured to support the substrate in the process space;   a gas supply unit configured to supply a hydrophobic gas onto the substrate supported on the substrate support unit; and   a controller configured to control the substrate support unit and the gas supply unit,   wherein the substrate support unit includes:   a support plate on which the substrate is placed; and   a pin assembly configured to raise the substrate off the support plate or lower the substrate onto the support plate, and   wherein the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.   
     
     
         2 . The apparatus of  claim 1 , wherein the controller moves a first substrate to a first height such that a surface of the first substrate has a first hydrophobic property and moves a second substrate to a second height such that a surface of the second substrate has a second hydrophobic property,
 wherein the first hydrophobic property has a higher degree of hydrophobization than the second hydrophobic property, and   wherein the first height is closer to the gas supply unit than the second height.   
     
     
         3 . The apparatus of  claim 2 , wherein the gas supply unit includes a gas supply tube configured to supply the hydrophobic gas into the process space and located over the support plate,
 wherein a dispensing end of the gas supply tube is located to overlap the support plate when viewed from above, and   wherein the first height is closer to the dispensing end than the second height.   
     
     
         4 . The apparatus of  claim 3 , wherein the controller controls the gas supply unit such that a flow rate of the hydrophobic gas dispensed from the gas supply tube is constant. 
     
     
         5 . The apparatus of  claim 2 , wherein the first height is a height at which the first substrate is spaced apart from the support plate, and
 wherein the second height is a height at which the second substrate is seated on the support plate.   
     
     
         6 . The apparatus of  claim 1 , wherein the first height is a height at which the first substrate is spaced apart from the support plate, and
 wherein the second height is a height at which the second substrate is spaced apart from the support plate.   
     
     
         7 . The apparatus of  claim 1 , wherein the hydrophobic gas supplied by the gas supply unit includes a hexamethyldisilane (HMDS) gas. 
     
     
         8 .- 20 . (canceled)