Substrate treating method and substrate treating apparatus

Abstract

The apparatus includes a chamber having a treating space for treating the substrate, a substrate support unit for supporting the substrate in the treating space, a gas supply unit for supplying gas into the treating space, and a plasma source for generating plasma from the gas supplied to the treating space, wherein the gas supply unit includes a shower head unit disposed in a top portion of the chamber so as to face away the substrate support unit, wherein a plurality of discharge holes are defined in the shower head unit, wherein the gas is discharged through the discharge holes, and a gas block for supplying the gas to the shower head unit, wherein the shower head unit has partitioned regions defined therein communicating with the discharge holes respectively, wherein the gas block supplies the gas to the partitioned regions at different flow rates.

1 . An apparatus for treating a substrate, the apparatus comprising:
 a chamber having a treating space for treating the substrate;   a substrate support unit for supporting the substrate in the treating space;   a gas supply unit for supplying gas into the treating space; and   a plasma source for generating plasma from the gas supplied to the treating space,   wherein the gas supply unit includes:
 a shower head unit disposed in a top portion of the chamber so as to face away the substrate support unit, wherein a plurality of discharge holes are defined in the shower head unit, wherein the gas is discharged through the discharge holes; and 
 a gas block for supplying the gas to the shower head unit, 
 wherein the shower head unit has partitioned regions defined therein communicating with the discharge holes respectively, 
 wherein the gas block supplies the gas to the partitioned regions at different flow rates. 
   
     
     
         2 . The apparatus of  claim 1 , further comprising a controller configured to control the gas block,
 wherein when viewed from above, the partitioned regions includes:
 a first region containing a center; and 
 a second region surrounding the first region, 
   wherein the gas block includes:
 a body having a first fluid channel defined therein connected to the first region and a second fluid channel defined therein connected to the second region; 
 a first adjuster for adjusting a flow rate of gas flowing in the first fluid channel to be a first flow rate; and 
 a second adjuster for adjusting a flow rate of gas flowing in the second fluid channel to be a second flow rate, 
   wherein the controller is configured to control the first and second adjusters such that the first flow rate and the second flow rate are different from each other.   
     
     
         3 . The apparatus of  claim 2 , wherein the controller is configured to control the first and second adjusters such that the first flow rate is higher than the second flow rate. 
     
     
         4 . The apparatus of  claim 2 , wherein the controller is configured to control the first adjuster to increase the first flow rate as a number of processes to treat the substrate increases. 
     
     
         5 . The apparatus of  claim 4 , wherein the controller is configured to control the second adjuster to increase the second flow rate as a number of processes to treat the substrate increases. 
     
     
         6 . The apparatus of  claim 5 , wherein the controller is configured to control the first and second adjusters to increase the first and second flow rates respectively such that a flow rate of gas to be supplied to a space between the shower head unit and the substrate support unit is constant. 
     
     
         7 .- 10 . (canceled)