Features for Improving Process Uniformity in a Millisecond Anneal System

Abstract

Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.

1 - 11 . (canceled) 
     
     
         12 . A process for thermally treating a substrate in a millisecond anneal system, comprising:
 obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber;   adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system based at least in part on the temperature profile.   
     
     
         13 . The process of  claim 12 , wherein the wedge reflector is located on a chamber wall proximate the wafer plane plate. 
     
     
         14 . The process of  claim 13 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a wedge angle for the wedge reflector. 
     
     
         15 . The process of  claim 13 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a height for the wedge reflector. 
     
     
         16 . The process of  claim 13 , wherein the edge reflector is located in the wafer plane plate. 
     
     
         17 . The process of  claim 12 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a surface profile for the edge reflector. 
     
     
         18 . The process of  claim 12 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting, with one or more controllers, a position of wedge reflector relative to the substrate during processing of the substrate. 
     
     
         19 . A process for thermally treating a substrate in a millisecond anneal system, comprising:
 obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber, the wafer plane plate comprising a non-rotating substrate support;   determining an angular location for placement of a device substrate in a processing chamber of the millisecond anneal system, the angular position determined based at least in part on the temperature profile.   
     
     
         20 . The process of  claim 19 , wherein the angular position is determined based at least in part on a location of one or more support pins in the millisecond anneal system.