Semiconductor wafer composed of monocrystalline silicon

Abstract

A semiconductor wafer of single-crystal silicon includes: a polished front side and a back side; a denuded zone, which extends from the polished front side toward the back side to a depth of not less than 45 μm; and a region adjacent to the denuded zone, the region having bulk micro defect (BMD) seeds, which are capable of being developed into BMDs. A density of the BMDs at a distance of 120 μm from the front side is not less than 3×10 9 cm −3 .

1 - 4 . (canceled) 
     
     
         5 : A semiconductor wafer of single-crystal silicon, the semiconductor wafer comprising:
 a polished front side and a back side;   a denuded zone, which extends from the polished front side toward the back side to a depth of not less than 45 μm; and   a region adjacent to the denuded zone, the region comprising bulk micro defect (BMD) seeds, which are capable of being developed into BMDs,   wherein a density of the BMDs at a distance of 120 μm from the front side is not less than 3×10 9  cm −3 .   
     
     
         6 : The semiconductor wafer according to  claim 5  comprising an epitaxial layer of single-crystal silicon, wherein an upper surface of the epitaxial layer forms the front side of the semiconductor wafer, thus increasing the depth to which the denuded zone extends by the magnitude of the thickness of the epitaxial layer. 
     
     
         7 : The semiconductor wafer according to  claim 5 , wherein the back side of the semiconductor wafer is burdened with not more than 100 defects greater than 0.2 μm.