US2019304752A1PendingUtilityA1

Apparatus and method for processing substrate

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Assignee: SEMES CO LTDPriority: Apr 2, 2018Filed: Mar 28, 2019Published: Oct 3, 2019
Est. expiryApr 2, 2038(~11.7 yrs left)· nominal 20-yr term from priority
Inventors:Je Ho Kim
H10P 72/722H10P 72/0616H10P 72/0421H01J 37/32082H01J 37/32623H01J 37/32724H10P 72/72H10P 72/0602H10P 72/0434H10P 72/0432H01J 37/3288H01J 37/32697H01J 37/3244H01J 37/32642H01J 2237/002H01J 2237/24585H01J 2237/334H01J 37/3211H01L 21/67288H01L 21/6833H01L 21/67069H01J 37/321
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Claims

Abstract

The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus includes a process chamber having a processing space inside, a support unit that supports the substrate in the processing space, a gas supply unit that supplies a process gas into the processing space, and a plasma source that generates plasma from the process gas. The support unit includes a support on which the substrate is placed, an edge ring around the substrate placed on the support, an impedance adjustment member provided below the edge ring, and a temperature adjustment member that variably adjusts temperature of the impedance adjustment member.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An apparatus for processing a substrate, the apparatus comprising:
 a process chamber having a processing space inside;   a support unit configured to support the substrate in the processing space;   a gas supply unit configured to supply a process gas into the processing space; and   a plasma source configured to generate plasma from the process gas,   wherein the support unit comprises:   a support on which the substrate is placed;   an edge ring configured to surround the substrate placed on the support;   an impedance adjustment member provided below the edge ring; and   a temperature adjustment member configured to variably adjust temperature of the impedance adjustment member.   
     
     
         2 . The apparatus of  claim 1 , wherein the impedance adjustment member is made of a material, the dielectric constant of which varies according to temperature. 
     
     
         3 . The apparatus of  claim 2 , further comprising:
 a controller configured to control the temperature adjustment member,   wherein the controller controls the temperature adjustment member to change the dielectric constant of the impedance adjustment member as a amount of corrosion of the edge ring increases.   
     
     
         4 . The apparatus of  claim 3 , wherein the controller controls the temperature adjustment member to increase the dielectric constant of the impedance adjustment member as the amount of corrosion of the edge ring increases. 
     
     
         5 . The apparatus of  claim 3 , wherein the apparatus further comprises a corrosion measurement member configured to measure the amount of corrosion of the edge ring, and
 wherein the controller receives the amount of corrosion measured by the corrosion measurement member.   
     
     
         6 . The apparatus of  claim 1 , wherein the impedance adjustment member is formed of a dielectric substance containing magnesium oxide. 
     
     
         7 . The apparatus of  claim 6 , wherein the dielectric substance contains 10 wt % to 50 wt % of magnesium oxide. 
     
     
         8 . The apparatus of  claim 1 , further comprising:
 a controller configured to control the temperature adjustment member,   wherein the controller controls temperature of the temperature adjustment member, based on a amount of corrosion of the edge ring.   
     
     
         9 . The apparatus of  claim 1 , wherein the impedance adjustment member has the highest dielectric constant at a first temperature, an increasing dielectric constant with a temperature rise in a range below the first temperature, and a decreasing dielectric constant with a temperature rise in a range above the first temperature, and
 wherein the controller controls the temperature adjustment member to raise the temperature of the impedance adjustment member in the range below the first temperature and lower the temperature of the impedance adjustment member in the range above the first temperature, when a amount of corrosion of the edge ring increases.   
     
     
         10 . The apparatus of  claim 1 , wherein the impedance adjustment member has a ring shape with an upper surface that corresponds to a shape of a lower portion of the edge ring. 
     
     
         11 . A method for processing a substrate, the method comprising:
 processing the substrate by supplying plasma onto the substrate placed on a support; and   controlling a plasma density above an edge ring by adjusting a dielectric constant of an impedance adjustment member placed below the edge ring, the edge ring being configured to surround a side of the substrate placed on the support.   
     
     
         12 . The method of  claim 11 , further comprising:
 variably adjusting the dielectric constant of the impedance adjustment member, based on a amount of corrosion of the edge ring.   
     
     
         13 . The method of  claim 11 , wherein the impedance adjustment member is formed of a dielectric substance containing magnesium oxide. 
     
     
         14 . The method of  claim 13 , wherein the dielectric substance contains 10 wt % to 50 wt % of magnesium oxide. 
     
     
         15 . The method of  claim 11 , further comprising:
 controlling temperature to increase the dielectric constant of the impedance adjustment member as a amount of corrosion of the edge ring increases.   
     
     
         16 . The method of  claim 11 , wherein the impedance adjustment member has the highest dielectric constant at a first temperature, an increasing dielectric constant with a temperature rise in a range below the first temperature, and a decreasing dielectric constant with a temperature rise in a range above the first temperature, and
 wherein temperature of the impedance adjustment member is raised in the range below the first temperature and lowered in the range above the first temperature when a amount of corrosion of the edge ring increases.   
     
     
         17 . The method of  claim 11 , further comprising:
 measuring a amount of corrosion of the edge ring; and   changing the dielectric constant of the impedance adjustment member according to the measured amount of corrosion.   
     
     
         18 . The method of  claim 11 , further comprising:
 changing the dielectric constant of the impedance adjustment member according to cumulative substrate processing time.   
     
     
         19 . The method of  claim 11 , further comprising:
 changing the dielectric constant of the impedance adjustment member according to the number of substrates processed.

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