US2018175094A1PendingUtilityA1

CMOS Image Sensor with Shared Sensing Node

Assignee: ASML NETHERLANDS BVPriority: Jan 31, 2005Filed: Aug 4, 2017Published: Jun 21, 2018
Est. expiryJan 31, 2025(expired)· nominal 20-yr term from priority
Inventors:Oh-Bong Kwon
H04N 25/00H04N 25/77H04N 25/59H04N 5/335H01L 27/14643H04N 5/3559H04N 5/3745H01L 27/14641H10F 39/18H10F 39/813H04N 25/46
57
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixels includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method, comprising: collecting charge generated by a first pixel of a plurality of pixels;
 transferring charge generated by the first pixel to a first sensing node of the first pixel and to a second sensing node of a second pixel of the plurality of pixels; and   generating, based on charge transferred to both the first sending node and the second sensing node, an output signal that is indicative of charge collected by the first pixel.

Join the waitlist — get patent alerts

Track US2018175094A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.