Method and apparatus for depositing amorphous silicon film

Abstract

Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH 2 ), disilane (Si 2 H 6 ), and dichlorosilane (SiCl 2 H 2 ).

What is claimed is: 
     
         1 . A method for depositing an amorphous silicon film, the method comprising:
 supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber; and   depositing the amorphous silicon film on the substrate at a process temperature under a process pressure,   wherein the source gas comprises at least one of silane (SiH 2 ), disilane (Si 2 H 6 ), and dichlorosilane (SiCl 2 H 2 ),   wherein the process temperature is adjusted to be in a range of about 540° C. to about 580° C. and the process pressure is adjusted to be in a range of about 8 Torr to about 300 Torr, so that the source gas is pyrolyzed to deposit the amorphous silicon film on the substrate, and   wherein the atmospheric gas comprises at least one of hydrogen and helium.   
     
     
         2 . The method of  claim 1 , wherein the source gas has a flow rate of about 0.5 sccm to about 300 sccm, and
 the atmospheric gas has a flow rate of about 100 sccm to about 25000 sccm.   
     
     
         3 . The method of  claim 1 , wherein the amorphous silicon film is deposited to have a thickness of about 1000 Å or more. 
     
     
         4 . The method of  claim 3 , wherein the amorphous silicon film is deposited to have a surface roughness of about 1 nm or less. 
     
     
         5 . The method of  claim 1 , wherein the substrate is placed on a heater, and the substrate is heated by the heater to the process temperature.